BS208 P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A TO-92 B C Mechanical Data · · · · Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.) Maximum Ratings D SG D BOTTOM VIEW Dim Min Max A 4.45 4.70 B 4.46 4.70 C 12.7 — D 0.41 0.63 E 3.43 3.68 G 2.42 2.67 H 1.14 1.40 All Dimensions in mm H H G @ TA = 25°C unless otherwise specified Symbol Value Unit Drain-Source-Voltage Characteristic -VDSS 240 V Drain-Gate-Voltage -VDGS 200 V Gate-Source-Voltage (pulsed) (Note 2) VGS ±20 V Drain-Current (continuous) -ID 200 mA Power Dissipation @TC = 25°C (Note 1) Pd 830 mW Tj, TSTG –55 to +150 °C Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Maximum Forward Current (continuous) IF 0.22 A Forward Voltage Drop (Typical) @ VGS = 0, IF = 0.75A, Tj = 25°C VF 0.85 V Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition -V(BR)DSS 200 230 — V -ID = 100µA, VGS = 0 Gate-Body Leakage Current -IGSS — — 10 nA -VGS = 15V, VDS = 0 Drain-Source Cutoff Current -IDSS -IDSX — — 1.0 25 µA -VDS =130V, VGS = 0 -VDS = 10V, -VGS = 0.2V Gate-Source Threshold Voltage -VGS(th) — 2.8 4.0 V VGS = VDS, -ID = 1.0mA Drain-Source ON Resistance rDS(ON) — 7.0 14 W -VGS = 10V, -ID = 100 mA Thermal Resistance Junction to Ambient RqJA — — 150 K/W Input Capacitance Output Capacitance Feedback Capacitance Ciss Coss Crss — 270 35 6.0 — pF Drain-Source Breakdown Voltage Notes: Note 1 -VDS = 20V, VGS= 0, f =1.0MHz 1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case. 2. Pulse Test: Pulse width = 80µs, duty factor = 1%. DS21901 Rev. E-3 1 of 2 BS208 2.0 0.8 -ID (ON), DRAIN ON-CURRENT (A) Pd, POWER DISSIPATION (W) 1 (See Note 1) 0.6 0.4 0.2 1.6 8 7 1.2 6 0.8 5 0.4 4 3.5 3 0 0 0 100 0 200 See Note 2 5.0 1.0 TA = 25°C 400 300 -VGS = 4.5V 200 4.0 100 3.5 0 0 2 4 6 8 500 0.4 0.2 0 gf s, FORWARD TRANSCONDUCTANCE (mm) 300 200 100 0 8 4 6 8 10 1000 -VDS = 25V See Note 2 800 600 400 200 0 10 0 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 5. Transconductance vs Gate-Source Voltage DS21901 Rev. E-3 2 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 4. Drain-Source Current vs Gate-Source Voltage 400 6 TA = 25°C (See Note 2) 0 -VDS = 25V 4 100 0.6 10 See Note 2 2 80 0.8 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics 0 60 40 -VDS = 25V -IDS, DRAIN-SOURCE CURRENT (A) -ID, DRAIN ON-CURRENT (mA) 500 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2, Output Characteristics TA, AMBIENT TEMPERATURE (ºC) Fig. 1. Power Derating Curve gfs, FORWARD TRANSCONDUCTANCE (mm) TA = 25°C -VGS = 9V See Note 2 500 1000 -ID, DRAIN CURRENT (mA) Fig. 6. Transconductance vs. Drain Current 2 of 2 BS208