DMN100 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · Extremely Low On-Resistance: 170mW @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits SC-59 Dim Min Max A 0.30 0.50 B 1.40 1.80 C 2.50 3.00 D 0.85 1.05 E 0.30 0.70 G G 1.70 2.10 H H 2.70 3.10 A D TOP VIEW B C Mechanical Data · · · · · · Case: SC-59, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagrams Weight: 0.008 grams (approx.) Ordering Information, See Sheet 2 G S D E M K J L J ¾ 0.10 K 1.00 1.40 L 0.55 0.70 M 0.10 0.35 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Characteristic Symbol DMN100 Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage Continuous VGSS ±20 V Drain Current Continuous Pulsed ID ± 1.1 ± 4.0 A Pd Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: 500 mW RqJA 250 K/W Tj, TSTG -55 to +150 °C 1. Pulse width £ 300ms, duty cycle £ 2%. DS30049 Rev. 5 - 2 1 of 3 DMN100 @ TA = 25°C unless otherwise specified Electrical Characteristics Characteristic Symbol Min Typ Max Unit BVDSS 30 Test Condition ¾ ¾ V VGS = 0V, ID = 250mA µA VDS = 24V, VGS = 0V VGS = ± 12V, VDS = 0V OFF CHARACTERISTICS (Note 1) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ Tj = 25°C @ Tj = 125°C Gate-Body Leakage IDSS ¾ ¾ 1.0 10 IGSS ¾ ¾ ± 100 nA VGS(th) 1.0 ¾ 3.0 V VDS = 10V, ID =1.0mA W VGS = 4.5V, ID = 0.5A VGS = 10V, ID = 1.0A VDS = 10V, ID =0.5A ON CHARACTERISTICS (Note 1) Gate Threshold Voltage RDS (ON) ¾ ¾ 0.170 0.240 gFS 1.3 2.4 ¾ S Input Capacitance Ciss ¾ 150 ¾ pF Output Capacitance Coss ¾ 90 ¾ pF Reverse Transfer Capacitance Crss ¾ 30 ¾ pF Total Gate Charge Qg ¾ 5.5 ¾ nC Gate-to-Source Charge Qgs ¾ 0.8 ¾ nC Gate-to-Drain Charge Qgd ¾ 1.3 ¾ nC Turn-On Delay Time tD(ON) ¾ 10 ¾ ns Turn-Off Delay Time tD(OFF) ¾ 25 ¾ ns Turn-On Rise Time tr ¾ 15 ¾ ns Turn-Off Fall Time tf ¾ 45 ¾ ns Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS VDS = 10V, VGS = 0V f = 1.0MHz VDS = 24V, ID = 1.0A, VGS = 10V SWITCHING CHARACTERISTICS VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50W SOURCE- DRAIN RATINGS (BODY DIODE) IS ¾ ¾ 0.54 A Pulse Source Current ISM ¾ ¾ 4.0 A Forward Voltage VSD ¾ ¾ 1.2 V IF = 1.0A, VGS = 0V trr ¾ 35 ¾ ns IF = 1.0A, di/dt = 50A/ms Continuous Source Current Reverse Recovery Time Notes: ¾ 1. Pulse width £ 300ms, duty cycle £ 2%. Ordering Information Notes: ¾ (Note 2) Device Packaging Shipping DMN100-7 SC-59 3000/Tape & Reel 2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information XXX X DS30049 Rev. 5 - 2 XXX = Product Type Marking Code X = Assembly Lot No. [0-9, A-Z, except G, I, J, O, Q, W] 2 of 3 DMN100 4.0 3.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3.5 ID, DRAIN CURRENT (A) 1.0 VGS = 10V 5.0V 4.5V 4.0V 3.5V 2.5 3.0V 2.0 1.5 1.0 2.5V 0.5 0 0 1 3 2 0.1 Vgs = 10V 0.01 5 4 Vgs = 4.5V 0 1 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs Drain Current 4.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.30 0.25 0.20 VGS = 4.5V, RDS @ 0.5A 0.15 0.10 VGS = 10V, RDS @ 1.0A 0.05 0 -50 0 50 100 150 Tj, JUNCTION TEMPERATURE (°C) Fig. 3 On-Resistance vs Junction Temperature DS30049 Rev. 5 - 2 4 3 2 VGS = 10V TA = 25°C 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs Gate-Source Voltage 3 of 3 DMN100