MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE TC Measured Point A B E F U H G J C2E1 E2 C1 G2 G2 CM D C 2 - Mounting Holes (6.5 Dia.) V G1 E1 K L M 3-M5 Nuts O O P Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. N TAB#110 t=0.5 P S R T E2 G2 C2E1 Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking C1 E2 E1 G1 Outline Drawing and Circuit Diagram Dimensions A Inches 3.7 Millimeters Inches Millimeters M 0.47 12.0 N 0.53 13.5 48.0 O 0.1 2.5 24.0 P 0.63 16.0 0.28 7.0 Q 0.98 25.0 0.67 17.0 R G 0.91 23.0 S 0.3 7.5 H 0.91 23.0 T 0.83 21.2 J 0.43 11.0 U 0.16 4.0 Type Current Rating Amperes VCES Volts (x 50) K 0.71 18.0 V 0.51 13.0 CM 50 24 L 0.16 4.0 B 3.15±0.01 C 1.89 D 0.94 E F 94.0 Dimensions Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies 80.0±0.25 1.18 +0.04/-0.02 30.0 +1.0/-0.5 Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50DU-24H is a 1200V (VCES), 50 Ampere Dual IGBT Module. Sep.1998 MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM50DU-24H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 50 Amperes ICM 100* Amperes IE 50 Amperes Peak Emitter Current** IEM 100* Amperes Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) Pc 400 Watts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current Emitter Current** (Tc = 25°C) Mounting Torque, M5 Main Terminal – 2.5~3.5 N·m Mounting Torque, M6 Mounting – 3.5~4.5 N·m – 310 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA 4.5 6 7.5 Volts – 2.9 3.7 Volts – Volts – nC Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V, Tj = 25°C IC = 50A, VGE = 15V, Tj = 125°C – Total Gate Charge QG VCC = 600V, IC = 50A, VGE = 15V – 187 Emitter-Collector Voltage** VEC IE = 50A, VGE = 0V – – 3.2 Min. Typ. Max. Units – – 7.5 nF – – 2.6 nF – – 1.5 nF 2.85 Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 50A, – – 80 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 200 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V td(off) RG = 6.3Ω, Resistive – – 150 ns tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time** trr IE = 50A, diE/dt = -100A/µs – – 300 ns Diode Reverse Recovery Charge** Qrr IE = 50A, diE/dt = -100A/µs – 0.28 – µC **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module – – 0.31 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module – – 0.7 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.035 – °C/W Contact Thermal Resistance Test Conditions Min. Typ. Max. Units Sep.1998 MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 100 15 12 VGE = 20V 80 11 60 10 40 9 20 8 0 2 4 6 8 60 40 20 VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 0 0 10 4 8 12 16 0 20 20 40 60 80 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 102 10 102 IC = 100A IC = 50A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) 8 6 VGE = 0V Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) 101 101 Cies 100 Coes Cres 10-1 IC = 20A 100 1.0 0 4 8 12 16 20 1.5 2.0 2.5 3.0 3.5 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 td(on) tr 101 101 COLLECTOR CURRENT, IC, (AMPERES) 102 REVERSE RECOVERY TIME, trr, (ns) td(off) 102 trr 101 Irr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 102 di/dt = -100A/µsec Tj = 25°C tf 102 100 100 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 VCC = 600V VGE = ±15V RG = 6.3 Ω Tj = 125°C 10-2 10-1 4.0 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 60 0 0 SWITCHING TIME, (ns) 5 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 100 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 50A 15 VCC = 400V VCC = 600V 10 5 0 0 50 100 150 200 250 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM50DU-24H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) MEDIUM POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998