MITSUBISHI IGBT MODULES CM200TU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F G E H E G E H R (4 - Mounting Holes) S K L GuP EuP D GvP EvP GwP EwP C GuN EuN TC Measured Point v u TC Measured M Point GwN EwN GvN EvN w N E 5 - M5 NUTS H E H K E J J TAB#110 t=0.5 P Q P GuP GvP GwP EuP EvP EwP U V W GuN GvN GwN EuN EvN EwN Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking N Outline Drawing and Circuit Diagram Dimensions Inches A 4.21 B 3.54±0.01 C 4.02 D 3.15±0.01 E 0.43 Millimeters 107.0 Dimensions K Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Inches Millimeters 0.15 3.75 90.0±0.25 L 0.67 17.0 102.0 M 1.91 48.5 80.0±0.25 N 0.03 0.8 11.0 P 0.32 8.1 F 0.91 23.0 Q 1.02 G 0.47 12.0 R 0.22 Dia. H 0.85 21.7 S 0.57 J 0.91 23.0 Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200TU-12H is a 600V (VCES), 200 Ampere SixIGBT Module. 26.0 5.5 Dia. Type Current Rating Amperes VCES Volts (x 50) 14.4 CM 200 12 Sep.1998 MITSUBISHI IGBT MODULES CM200TU-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM200TU-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 200 Amperes ICM 400* Amperes IE 200 Amperes Peak Emitter Current** IEM 400* Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 650 Watts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Mounting Torque, M5 Main Terminal – 2.5~3.5 N·m Mounting Torque, M5 Mounting – 2.5~3.5 N·m – 680 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts IC = 200A, VGE = 15V, Tj = 125°C – 2.6 – Volts Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V – 400 – nC Emitter-Collector Voltage* VEC IE = 200A, VGE = 0V – – 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units nF Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 200A, – – 150 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 400 ns Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V – 17.6 Cies Switch – Typ. Input Capacitance – – 9.6 nF – – 2.6 nF td(off) RG = 3.1Ω, Resistive – – 300 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time trr IE = 200A, diE/dt = -400A/µs – – 160 µC Diode Reverse Recovery Charge Qrr IE = 200A, diE/dt = -400A/µs – 0.48 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/6 Module – Thermal Resistance, Junction to Case Rth(j-c)D Per Free-Wheel Diode 1/6 Module – – 0.35 °C/W Rth(c-f) Per Module, Thermal Grease Applied – 0.015 – °C/W Contact Thermal Resistance Typ. – Max. 0.19 Units °C/W Sep.1998 MITSUBISHI IGBT MODULES CM200TU-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) 320 400 15 14 5 VCE = 10V Tj = 25°C Tj = 125°C 13 VGE = 20V 12 240 11 160 10 80 9 320 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 220 160 80 8 0 0 0 2 4 6 8 3 2 1 4 8 12 16 0 20 80 160 240 320 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 102 8 6 IC = 200A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) IC = 400A 102 101 400 VGE = 0V Tj = 25°C Tj = 25°C EMITTER CURRENT, IE, (AMPERES) Cies 101 Coes 100 Cres IC = 80A 100 0.6 0 0 4 8 12 16 20 1.4 1.8 2.2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 REVERSE RECOVERY TIME, trr, (ns) tf td(off) td(on) tr 101 VCC = 300V VGE = ±15V RG = 3.1 Ω Tj = 125°C 102 COLLECTOR CURRENT, IC, (AMPERES) 10-1 10-1 3.0 103 Irr 102 trr di/dt = -400A/µsec Tj = 25°C 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 102 2.6 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 101 1.0 GATE CHARGE, VGE 101 100 10-1 103 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 400 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 200A 16 VCC = 200V VCC = 300V 12 8 4 0 0 150 300 450 600 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM200TU-12H TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.19°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.35°C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998