CM75BU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Four IGBTMOD™ U-Series Module 75 Amperes/600 Volts A B S 4 - Mounting Holes F E H G E R L M GvP EvP GuP EuP C D TC Measured Point TC Measured Point U GvN EuN EvN V E Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of four IGBT Transistors in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. L H N K F V P Q J J 4 - M4 NUTS GuN W G 0.110 - 0.5 Tab V T U X Features: □ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking P GuP EuP U GvP EvP V GuN EuN GvN EvN N Outline Drawing and Circuit Diagram Dimensions Inches A 2.83 Millimeters Dimensions Inches 72.0 M 0.74 Millimeters 55±0.25 N 0.02 0.5 91.0 P 1.55 39.3 18.7 B 2.17±0.01 C 3.58 D 2.91±0.01 Q 0.63 16.0 E 0.43 11.0 R 0.57 14.4 74.0±0.25 Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM75BU-12H is a 600V (VCES), 75 Ampere FourIGBT IGBTMOD™ Power Module. F 0.79 20.0 S 0.22 Dia. 5.5 Dia. G 0.69 17.5 T 0.32 8.1 H 0.75 19.1 U 1.02 26.0 J 0.39 10.0 V 0.59 15.0 Type Current Rating Amperes VCES Volts (x 50) K 0.41 10.5 W 0.20 5.0 CM 75 12 L 0.05 X 1.61 41.0 1.25 67 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75BU-12H Four IGBTMOD™ U-Series Module 75 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Symbol CM75BU-12H Units Tj -40 to 150 °C Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 600 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 75 Amperes ICM 150* Amperes IE 75 Amperes Peak Emitter Current** IEM 150* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 310 Watts Mounting Torque, M4 Main Terminal – 15 in-lb Mounting Torque, M5 Mounting – 31 in-lb – 390 Grams Viso 2500 Volts Storage Temperature Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA 4.5 6 7.5 Volts – 2.4 3.0 Volts – Volts – nC Gate-Emitter Threshold Voltage VGE(th) IC = 7.5mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(sat) IC = 75A, VGE = 15V, Tj = 25°C IC = 75A, VGE = 15V, Tj = 125°C – Total Gate Charge QG VCC = 300V, IC = 75A, VGE = 15V – 150 Emitter-Collector Voltage* VEC IE = 75A, VGE = 0V – – 2.6 Min. Typ. Max. Units – – 6.6 nf – – 3.6 nf – – 1.0 nf 2.6 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) VCC = 300V, IC = 75A, – – 100 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 250 ns Switch Turn-off Delay Time Times Fall Time VCE = 10V, VGE = 0V td(off) RG = 8.3V, Resistive – – 200 ns tf Load Switching Operation – – 300 ns Diode Reverse Recovery Time trr IE = 75A, diE/dt = -150A/µs – – 160 ns Diode Reverse Recovery Charge Qrr IE = 75A, diE/dt = -150A/µs – 0.18 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Test Conditions Rth(j-c)Q Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/4 Module Rth(c-f) Per Module, Thermal Grease Applied Contact Thermal Resistance 68 Symbol Thermal Resistance, Junction to Case Per IGBT 1/4 Module Min. Typ. Max. – – 0.4 Units °C/W – – 0.9 °C/W – 0.025 – °C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM75BU-12H Four IGBTMOD™ U-Series Module 75 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) 200 VGE = 20V 120 5 13 14 12 90 11 60 10 30 9 VCE = 10V Tj = 25°C Tj = 125°C 160 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 15 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 120 80 40 8 0 0 0 2 4 6 8 3 2 1 4 8 12 16 0 20 30 60 90 120 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 103 IC = 150A 8 IC = 75A 6 4 2 101 102 101 Cies 100 Coes 10-1 Cres VGE = 0V f = 1MHz IC = 30A 4 8 12 16 20 100 100 1.8 2.2 2.6 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 tf tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 102 101 Irr 101 100 101 EMITTER CURRENT, IE, (AMPERES) 101 102 GATE CHARGE, VGE 102 trr 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) di/dt = -150A/µsec Tj = 25°C td(off) REVERSE RECOVERY TIME, trr, (ns) VCC = 300V VGE = ±15V RG = 8.3 Ω Tj = 125°C td(on) 101 1.4 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 103 102 1.0 10-2 10-1 100 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 .06 0 0 150 Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) Tj = 25°C EMITTER CURRENT, IE, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 10 SWITCHING TIME, (ns) VGE = 15V Tj = 25°C Tj = 125°C 0 0 10 REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) 150 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) IC = 75A 16 VCC = 200V 12 VCC = 300V 8 4 0 0 50 100 150 200 GATE CHARGE, QG, (nC) 69 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-3 101 100 10-2 10-1 100 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 70 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.4°C/W 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) CM75BU-12H Four IGBTMOD™ U-Series Module 75 Amperes/600 Volts TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 100 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.9°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3