MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD (2 TYP.) R K P E M G B A S - M8 THD (2 TYP.) C E Q J C Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. G L H T - DIA. (4 TYP.) F N D E E C G E Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 5.12 130.0 L 0.79 20.0 B 4.33±0.01 110.0±0.25 M 0.77 19.5 1.840 46.75 Features: u Low Drive Power u Low VCE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Q 0.51 13.0 F 1.42 36.0 R 0.35 9.0 Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM1000HA-28H is a 1400V (VCES), 1000 Ampere Single IGBT Module. G 1.25 31.8 S M8 Metric M8 Type H 1.18 30.0 T 0.26 Dia. Dia. 6.5 J 1.10 28.0 U M4 Metric M4 K 1.08 27.5 C N 0.75 19.0 D 1.73+0.04/–0.02 44.0+1.0/–0.5 P 0.61 15.6 E 1.46+0.04/–0.02 37.0+1.0/–0.5 CM Current Rating Amperes VCES Volts (x 50) 1000 28 Sep.1998 MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HU-12H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1400 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts IC 1000 Amperes ICM 2000* Amperes Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) IE 1000 Amperes Peak Emitter Current** IEM 2000* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 5800 Watts Mounting Torque, M8 Main Terminal – 8.83~10.8 N·m Mounting Torque, M6 Mounting – 1.96~2.94 N·m Mounting Torque, M4 Terminal – 0.98~1.47 N·m – 1600 Grams Viso 2500 Vrms Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V – – 2.0 mA IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 100mA, VCE = 10V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage VCE(sat) Gate Leakage Current IC = 1000A, VGE = 15V – 3.3 4.5 Volts IC = 1000A, VGE = 15V, Tj = 150°C – 3.1 – Volts Total Gate Charge QG VCC = 800V, IC = 1000A, VGE = 15V – 5355 – nC Emitter-Collector Voltage VEC IE = 10000A, VGE = 0V – – 4.0 Volts Min. Typ. Max. Units – – * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V 200 nF – – 70 nF – – 40 nF – – 800 ns tr VCC = 800V, IC = 1000A, – – 2000 ns td(off) VGE1 = VGE2 = 15V, RG = 3.3Ω – – 1200 ns – – 650 ns tf Diode Reverse Recovery Time trr IE = 1000A, diE/dt = –2000A/µs – – 300 ns Diode Reverse Recovery Charge Qrr IE = 1000A, diE/dt = –2000A/µs – 10.5 – µC Test Conditions Min. Typ. Max. Units Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.022 °C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.050 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.018 °C/W Sep.1998 MITSUBISHI IGBT MODULES CM1000HA-28H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 2000 5 2000 Tj = 25°C 14 VCE = 10V Tj = 25°C Tj = 125°C 13 15 1600 1600 VGE = 20V VGE = 15V Tj = 25°C Tj = 125°C 4 1200 11 800 VCE(sat), (VOLTS) IC, (AMPERES) IC, (AMPERES) 12 1200 800 3 2 10 9 400 400 1 8 0 0 0 2 4 6 8 10 4 8 12 16 20 0 400 800 1200 1600 VGE, (VOLTS) IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 10 CAPACITANCE, Cies, Coes, Cres, (nF) VGE = 0V IC = 2000A IE, (AMPERES) IC = 1000A 6 4 2 2000 103 Tj = 25°C 8 VCE(sat), (VOLTS) 0 0 VCE, (VOLTS) 103 102 IC = 400A Cies 102 Coes 101 Cres 101 1.0 0 8 12 16 20 1.5 2.0 2.5 3.0 3.5 100 10-1 4.0 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 tf t d(on) tr VCC = 800V VGE = ±15V RG = 3.3Ω Tj = 125°C 101 101 102 103 COLLECTOR CURRENT IC, (AMPERES) 104 REVERSE RECOVERY TIME, t rr, (ns) SWITCHING TIME, (ns) td(off) trr 102 101 101 102 Irr 102 102 GATE CHARGE, VGE 103 di/dt = -2000A/µsec Tj = 25°C 103 101 VCE, (VOLTS) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 102 100 VEC, (VOLTS) VGE, (VOLTS) 103 EMITTER CURRENT, IE, (AMPERES) 101 104 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 4 REVERSE RECOVERY CURRENT, Irr, (AMPERES) 0 IC = 1000A Tj = 25°C 16 VCC = 800V VCC = 600V 12 8 4 0 0 2000 4000 6000 8000 10000 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM1000HA-28H 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.022°C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) HIGH POWER SWITCHING USE INSULATED TYPE 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.05 °C/W 10-1 10-1 10-2 10-2 10-3 10-5 10-4 10-3 10-3 TIME, (s) Sep.1998