MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VS-8 STROBE FLASHER USE CT30VS-8 OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 0 +0.3 –0 (1.5) 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 1 5 0.5 q w e wr q GATE w COLLECTOR e EMITTER r COLLECTOR q ¡VCES ............................................................................... 400V ¡ICM ................................................................................... 180A 2.6 ± 0.4 4.5 0.8 e TO-220S APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter Conditions VCES VGES VGEM Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.5s ICM Tj Tstg Collector current (Pulsed) Junction temperature Storage temperature See figure 1 ELECTRICAL CHARACTERISTICS Ratings Unit 400 ±30 ±40 V V V 180 –40 ~ +150 –40 ~ +150 A °C °C (Tj = 25°C) Symbol Parameter V(BR)CES ICES Collector-emitter breakdown voltage Collector-emitter leakage current IGES VGE(th) Gate-emitter leakage current Gate-emitter threshold voltage Test conditions Limits IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V Min. 450 — Typ. — — Max. — 10 VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA — — — — ±0.1 7.0 Unit V µA µA V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VS-8 STROBE FLASHER USE MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 1000µF 160 TC < = 50°C 120 TC < = 70°C 80 40 0 0 10 20 30 MAXIMUM PULSE COLLECTOR CURRENT 2000 MAIN CAPACITOR CM (µF) PULSE COLLECTOR CURRENT ICM (A) PERFORMANCE CURVES 40 1600 1200 800 400 VCM = 350V < 70°C TC = VGE > = 28V 0 120 50 GATE-EMITTER VOLTAGE VGE (V) 140 160 180 200 220 PULSE COLLECTOR CURRENT ICP (A) Figure 1 Figure 2 APPLICATION EXAMPLE TRIGGER Vtrig SIGNAL IXe CM + – Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V IP = 160A CM = 800µF VGE = 28V 360V 180A 1000µF Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (In general, it is satisfied if RG ≥ 30Ω) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 180A : full luminescence condition) of main condenser (CM=1000µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Feb.1999