To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices and power devices. Renesas Technology Corp. Customer Support Dept. April 1, 2003 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE CT25ASJ-8 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 1.0 2.3 2.3 10MAX. 2.3MIN. 0.9MAX. 1.0MAX. 5.5 ± 0.2 4 0.5 ± 0.2 2.3 0.8 1 2 3 wr q GATE w COLLECTOR e EMITTER r COLLECTOR q ¡VCES ................................................................................ 400V ¡ICM .................................................................................... 150A ¡Drive Voltage VGE=4V ¡Small Package MP-3 e MP-3 APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Conditions Collector-emitter voltage VGE = 0V Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) See figure 1 Junction temperature Storage temperature ELECTRICAL CHARACTERISTICS Ratings Unit 400 ±6 ±8 V V V 150 –40 ~ +150 –40 ~ +150 A °C °C (Tj = 25°C) Symbol Parameter V(BR)CES ICES Collector-emitter breakdown voltage Collector-emitter leakage current IGES VGE(th) Gate-emitter leakage current Gate-emitter threshold voltage Test conditions Limits IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V Min. 450 — Typ. — — Max. — 10 VGE = ±6V, VCE = 0V VCE = 10V, IC = 1mA — — — — ±0.1 1.5 Unit V µA µA V Feb.1999 MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE PULSE COLLECTOR CURRENT ICM (A) PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT 160 CM = 400µF 120 80 TC ≤ 70°C 40 0 0 2 4 6 8 GATE-EMITTER VOLTAGE VGE (V) Figure 1 APPLICATION EXAMPLE 20µH TRIGGER Vtrig SIGNAL IXe CM + – Vtrig VCM IGBT GATE VG VOLTAGE RG VCE Xe TUBE CURRENT VG Ixe IGBT RECOMMEND CONDITION MAXIMUM CONDITION VCM = 330V ICP = 130A CM = 330µF VGE = 5V 350V 150A 400µF Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 0.1A. (In general, it is satisfied if RG ≥ 30Ω) Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully not to suffer from electrostatic charge. Notice 3. The operation life should be endured 5,000 shots under the charge current (Ixe ≤ 150A : full luminescence condition) of main condenser (CM=400µF). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total operation hours must be applied within 5,000 hours. Feb.1999