CT40KM-8H Nch IGBT for Strobe Flasher REJ03G0286-0200 Rev.2.00 Jul. 07, 2005 Features • VCES : 400 V • TO-220FN package • High Speed Switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 1 : Gate 2 : Collector 3 : Emitter 1 1 2 3 3 Applications Strobe flashers Maximum Ratings (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Symbol VCES VGES Ratings 400 30 Unit V V Peak gate-emitter voltage Collector current (Pulse) VGEM ICM 40 200 V A Maximum power dissipation Junction temperature Storage temperature Mass PC Tj Tstg — 45 – 40 to +150 – 40 to +150 2.0 W °C °C g Rev.2.00, Jul. 07,.2005, page 1 of 4 Conditions VGE = 0 V VCE = 0 V, Refer to item 4 under Notes on the Actual Specifications VCE = 0 V, tw = 0.5 s CM = 1500 µF (see performance curve) Typical value CT40KM-8H Electrical Characteristics (Tj = 25°C) Parameter Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage Symbol V(BR)CES ICES IGES VGE(th) Min. 450 — — — Typ. — — — — Max. — 10 ±0.1 7.0 Unit V µA µA V Performance Curves Maximum Pulse Collector Current Pulse Collector Current ICM (A) 200 CM = 1500µF Tc = 70°C 160 RG = 30Ω Single pulse 120 80 40 0 0 10 20 30 40 Gate-Emitter Voltage VGE (V) Rev.2.00, Jul. 07,.2005, page 2 of 4 50 Test conditions IC = 1 mA, VGE = 0 V VCE = 400 V, VGE = 0 V VGE = ±40 V, VCE = 0 V VCE = 10 V, IC = 1 mA CT40KM-8H Application Example IXe Vtrig CM + – Trigger Signal Vtrig IGBT Gate Voltage VG VCM RG VCE VG IGBT Xe Tube Current IXe VCM ICP CM VGE Recommended Operation Conditions 330 V 180 A 1200 µF 28 V Maximum Operation Conditions 350 V 200 A 1500 µF — Precautions on Usage 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And peak reverse gate current during turn-off must become less than 1 A. (In general, when RG(off) = 30 Ω, it is satisfied.) 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the device from electrostatic charge. 3. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 200 A : full luminescence condition) of main capacitor (CM = 1500 µF) which can endure repeated discharge of 5,000 times. Repetition period under full luminescence condition is over 3 seconds. 4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours. Rev.2.00, Jul. 07,.2005, page 3 of 4 CT40KM-8H Package Dimensions JEITA Package Code − RENESAS Code Package Name MASS[Typ.] PRSS0003AB-A TO-220FN 2.0g Unit: mm 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name Note : Please confirm the specification about the shipping in detail. Rev.2.00, Jul. 07,.2005, page 4 of 4 Standard order code example CT40KM-8H Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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