FAN73711 High-Current, High-Side Gate Drive IC Features Description Floating Channel for Bootstrap Operation to +600V The FAN73711 is a monolithic high-side gate drive IC that can drive high-speed MOSFETs and IGBTs operating up to +600V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross-conduction. 4A/4A Sourcing/Sinking Current Driving Capability Common-Mode dv/dt Noise Canceling Circuit 3.3V and 5V Input Logic Compatible Output In-phase with Input Signal Under-Voltage Lockout for VBS Built-In Shunt Regulator on VDD and VBS 8-Lead Small Outline Package (SOP) Applications High-Speed Gate Driver Sustain Switch Driver in PDP Application Energy Recovery Circuit Switch Driver in PDP Application Fairchild’s high-voltage process and common-mode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit offers high-side gate driver operation up to VS=-9.8V (typical) for VBS=15V. The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage. The high-current and low-output voltage drop feature makes this device suitable for sustain and energyrecovery circuit switches driver in the plasma display panel application, motor drive inverter, switching power supply, and high-power DC-DC converter applications. High-Power Buck Converter Motor Drive Inverter 8-SOP Ordering Information Part Number FAN73711M FAN73711MX Operating Temperature Range Package 40°C ~ 125°C 8-SOP Eco Status RoHS Packing Method Tube Tape and Reel For Fairchild’s definition of Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html. © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 www.fairchildsemi.com FAN73711 — High-Current, High-Side Gate Drive IC June 2009 15V DBOOT3 VS 15V FAN73711 RBOOT1 DBOOT1 8 VB Q3 1 VDD 2 IN 4 GND VB 8 HO 7 VS 6 NC 5 2 VS 5 NC IN 2 IN3 8 IN HO 7 3 NC VS 6 NC 5 GND 4 D2 To Panel R2 Q1 VB NC 3 D4 FAN73711 8 VB Q2 R5 IN2 6 R1 FAN73711 VDD HO L1 D1 DBOOT2 1 VDD 1 7 CBOOT3 R4 CBOOT1 3 NC R3 D3 FAN73711 IN1 RBOOT3 Q4 VDD 1 R7 7 HO 6 VS 5 NC IN 2 IN4 CBOOT2 C1 R6 NC 3 C3 R8 4 GND GND 4 C2 Energy Recovery System Sustain Drive Part FAN73711 Rev.01 Figure 1. Floated Bi-Directional Switch and Half-Bridge Driver: PDP Application VIN 15V RBOOT DBOOT FAN73711 1 VDD VB 8 R1 2 IN PWM HO 7 CBOOT C1 3 NC 4 GND L1 R2 VS 6 NC 5 D1 C2 VOUT FAN73711 Rev.01 Figure 2. Step-Down (Buck) DC-DC Converter Application © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 www.fairchildsemi.com 2 FAN73711 — High-Current, High-Side Gate Drive IC Typical Application Diagrams 1 GND 4 UVLO PULSE GENERATOR IN VDD 2 110K NOISE CANCELLER R R S Q Shoot-through current compensated gate driver VDD 8 VB 7 HO 6 VS Pin 3 and 5 are no connection. FAN73711 Rev.01 Figure 3. Functional Block Diagram Pin Configuration VDD 1 IN 2 8 VB 7 HO FAN73711 NC 3 6 VS GND 4 5 NC FAN73711 Rev.01 Figure 4. Pin Configuration (Top View) Pin Definitions Pin # Name 1 VDD 2 IN Logic Input for High-Side Gate Driver Output 3 NC No Connection 4 GND 5 NC No Connection 6 VS High-Voltage Floating Supply Return 7 HO High-Side Driver Output 8 VB High-Side Floating Supply © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 Description Supply Voltage Ground www.fairchildsemi.com 3 FAN73711 — High-Current, High-Side Gate Drive IC Internal Block Diagram Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25°C unless otherwise specified. Symbol Characteristics (1) Min. Max. Unit VB-VSHUNT VB+0.3 V VS High-Side Floating Offset Voltage VB High-Side Floating Supply Voltage -0.3 625.0 V VHO High-Side Floating Output Voltage VS-0.3 VB+0.3 V -0.3 VSHUNT V -0.3 VDD+0.3 V VDD Low-Side and Logic Supply Voltage VIN Logic Input Voltage dVS/dt (1) Allowable Offset Voltage Slew Rate ± 50 V/ns PD Power Dissipation(2, 3, 4) 0.625 W θJA Thermal Resistance 200 °C/W TJ Junction Temperature -55 +150 °C TSTG Storage Temperature -55 +150 °C Notes: 1. 2. 3. 4. This IC contains a shunt regulator on VDD and VBS . This supply pin should not be driven by a low-impedance voltage source greater than the VSHUNT specified in the electrical characteristics section. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions, natural convection, and JESD51-3: Low effective thermal conductivity test board for leaded surface-mount packages. Do not exceed power dissipation (PD) under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Min. Max. Unit VB High-Side Floating Supply Voltage VS+10 VS+20 V VS High-Side Floating Supply Offset Voltage 6-VDD 600 V VS VB V GND VDD V VHO High-Side Output Voltage VIN Logic Input Voltage VDD Supply Voltage 10 20 V Operating Ambient Temperature -40 +125 °C TA © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 www.fairchildsemi.com 4 FAN73711 — High-Current, High-Side Gate Drive IC Absolute Maximum Ratings VBIAS(VDD, VBS)=15.0V, TA = 25°C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are relative to VS and are applicable to the respective output HO. Symbol Characteristics Power Supply Section Quiescent VDD Supply Current IQDD IPDD Operating VDD Supply Current Bootstrapped Supply Section VBS Supply Under-Voltage Positive-Going VBSUV+ Threshold Voltage VBS Supply Under-Voltage Negative-Going VBSUVThreshold Voltage VBS Supply Under-Voltage Lockout VBSHYS Hysteresis Voltage Test Condition Min. Typ. Max. Unit VIN=0V or 5V 25 70 μA fIN=20KHz, No Load 35 100 μA VBS=Sweep 8.0 9.0 10.0 V VBS=Sweep 7.3 8.3 9.3 V VBS=Sweep 0.7 Offset Supply Leakage Current IQBS Quiescent VBS Supply Current VIN=0V or 5V Operating VBS Supply Current CLOAD=1000pF, fIN=20KHz, rms Value IPBS 10 μA 60 120 μA 470 800 23 25 V 0.8 V V 65 μA VB=VS=625V ILK V μA Shung Regulator Section VSHUNT VDD and VBS Shunt Regulator Clamping Voltage VDD=Sweep or VBS=Sweep ISHUNT=5mA Input Logic Section VIH Logic “1” Input Voltage VIL Logic “0” Input Voltage 2.5 IIN+ Logic Input High Bias Current VIN=5V IIN- Logic Input Low Bias Current VIN=0V RIN Input Pull-Down Resistance Gate Driver Output Section High Level Output Voltage (VBIAS - VO) VOH VOL 40 2 90 110 No Load IO- No Load Output High, Short-Circuit Pulsed Current(5) VHO=0V, VIN=5V, PW ≤10µs Output Low, Short-Circuit Pulsed Current(5) VHO=15V,VIN=0V, PW ≤10µs VS Allowable Negative VS Pin Voltage for IN Signal Propagation to HO IO+ 21 Low Level Output Voltage μA KΩ 1.2 V 30 mV 3 4 A 3 4 A -9.8 -7.0 V Note: 5. These parameters guaranteed by design. Dynamic Electrical Characteristics VDD=VBS=15V, GND=0V, CLOAD=1000pF, TA=25°C, unless otherwise specified. Symbol Typ. Max. Unit ton Turn-On Propagation Delay Time Parameter VS=0V Conditions Min. 150 210 ns toff Turn-Off Propagation Delay Time VS=0V 150 210 ns tr Turn-On Rise Time 25 50 ns tf Turn-Off Fall Time 15 40 ns © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 www.fairchildsemi.com 5 FAN73711 — High-Current, High-Side Gate Drive IC Electrical Characteristics 200 180 180 tOFF [ns] tON [ns] 200 160 160 140 140 120 120 100 100 -40 -20 0 20 40 60 80 100 -40 120 -20 0 50 50 40 40 30 20 10 10 0 20 40 60 80 100 0 -40 120 -20 0 Figure 7. Turn-On Rise Time vs. Temperature 100 120 20 40 60 80 100 120 Figure 8. Turn-Off Fall Time vs. Temperature 100 100 75 75 IQDD [ μA] IQDD [ μA] 80 Temperature [°C] Temperature [°C] 50 50 25 25 0 -40 60 30 20 -20 40 Figure 6. Turn-Off Propagation Delay vs. Temperature tF [ns] tR [ns] Figure 5. Turn-On Propagation Delay vs. Temperature 0 -40 20 Temperature [°C] Temperature [°C] -20 0 20 40 60 80 100 0 -40 120 0 20 40 60 80 100 120 Temperature [°C] Temperature [°C] Figure 9. Quiescent VDD Supply Current vs. Temperature © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 -20 Figure 10. Quiescent VBS Supply Current vs. Temperature www.fairchildsemi.com 6 FAN73711 — High-Current, High-Side Gate Drive IC Typical Characteristics 100 800 600 IPBS [ μA] IPDD [ μA] 80 60 40 200 20 0 -40 400 -20 0 20 40 60 80 100 0 -40 120 -20 0 Temperature [°C] Figure 11. Operating VDD Supply Current vs. Temperature 40 60 80 100 120 Figure 12. Operating VBS Supply Current vs. Temperature 10.0 9.5 9.0 VBSUV- [V] 9.5 VBSUV+ [V] 20 Temperature [°C] 9.0 8.5 8.0 8.5 7.5 8.0 -40 -20 0 20 40 60 80 100 7.0 -40 120 -20 0 Temperature [°C] 20 40 60 80 100 120 Temperature [°C] Figure 13. VBS UVLO+ vs. Temperature Figure 14. VBS UVLO- vs. Temperature 1.2 30 25 VOL [mV] VOH [V] 0.9 0.6 20 15 10 0.3 5 0.0 -40 -20 0 20 40 60 80 100 0 -40 120 Temperature [°C] 0 20 40 60 80 100 120 Temperature [°C] Figure 15. High-Level Output Voltage vs. Temperature © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 -20 Figure 16. Low-Level Output Voltage vs. Temperature www.fairchildsemi.com 7 FAN73711 — High-Current, High-Side Gate Drive IC Typical Characteristics (Continued) 2.5 2.0 2.0 VIL [V] VIH [V] 2.5 1.5 1.0 1.5 1.0 0.5 -40 -20 0 20 40 60 80 100 0.5 -40 120 -20 0 Temperature [°C] 20 40 60 80 100 120 Temperature [°C] Figure 17. Logic High Input Voltage vs. Temperature Figure 18. Logic Low Input Voltage vs. Temperature -7 60 -8 40 VS [V] IIN+ [ μA] 50 30 -9 -10 20 -11 10 0 -40 -20 0 20 40 60 80 100 -12 -40 120 Temperature [°C] -20 0 20 40 60 80 100 120 Temperature [°C] Figure 20. Allowable Negative VS Voltage vs. Temperature Figure 19. Logic Input High Bias Current vs. Temperature 25 VSHUNT [V] 24 23 22 21 -40 -20 0 20 40 60 80 100 120 Temperature [°C] Figure 21. Shunt Regulator Clamping Voltage vs. Temperature © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 www.fairchildsemi.com 8 FAN73711 — High-Current, High-Side Gate Drive IC Typical Characteristics (Continued) Timing Diagram 15V 50% VDD 10nF VB 10µF 10µF 0.1µF 15V 50% IN VS GND ton tr toff tf FAN73711 1000pF 90% 90% HO IN OUT 10% 10% FAN73711 Rev.01 Figure 22. Switching Time Test Circuit and Waveform Definitions © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 www.fairchildsemi.com 9 FAN73711 — High-Current, High-Side Gate Drive IC Switching Time Definitions 5.00 4.80 A 0.65 3.81 8 5 6.20 5.80 B 1.75 4.00 3.80 1 PIN ONE INDICATOR 5.60 4 1.27 (0.33) 0.25 M 1.27 C B A LAND PATTERN RECOMMENDATION 0.25 0.10 SEE DETAIL A 1.75 MAX 0.25 0.19 C 0.10 0.51 0.33 0.50 x 45° 0.25 R0.10 C OPTION A - BEVEL EDGE GAGE PLANE R0.10 0.36 OPTION B - NO BEVEL EDGE NOTES: UNLESS OTHERWISE SPECIFIED 8° 0° 0.90 0.406 SEATING PLANE (1.04) DETAIL A SCALE: 2:1 A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AA, ISSUE C, B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE MOLD FLASH OR BURRS. D) LANDPATTERN STANDARD: SOIC127P600X175-8M. E) DRAWING FILENAME: M08AREV13 Figure 23. 8-Lead Small Outline Package (SOP) Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/. © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 www.fairchildsemi.com 10 FAN73711 — High-Current, High-Side Gate Drive IC Package Dimensions FAN73711 — High-Current, High-Side Gate Drive IC © 2009 Fairchild Semiconductor Corporation FAN73711 • Rev. 1.0.0 www.fairchildsemi.com 11