MA1046-1 MA1046-1 For 1.9 GHz - Power Amplifier 2. Electrical Performances (Tc = +25°C, VD 1, 2 = 6V, VD3 = 10V, VG 1, 2 = –5V, VG 3 = –3V, Zg = Zl = 50Ω) OUTLINE DRAWING No. 62 Max. Items Symbol 1.8 a b c d e f g h 25 Max. 21 Max. 19.5 MA1046-1 5 5 10 5 5 10 5 4 2 8 8 1.2 Po = +35.0 dBm, Gain = +32 dB (min.) @1.9 GHz Vd1, 2 = +6.0V, Vd3 = +10.0V Vg1, 2 = –5.0V, Vg3 = 3.0V 2 GND 3 VG12 8 Max. 2.5 Power amplifier for PHS base station/Japan. ––– 1918 MHz 33 ––– ––– dB ––– ––– ±2 dB Power Gain G Temperature Characteristics (Power Gain) 4 Gain Variation ∆G ––– ––– ±0.5 dB 5 Drain Current ID 12 ––– ––– 400 mA ID 3 ––– ––– 1400 mA 6 Gate Current IG 12 ––– ––– 2 mA 7 ACP 8 9 Input VSWR 10 Spurious In Band Po = +35 dBm π / 4 Shift QPSK Modulation –PN9 IG 3 ––– ––– 5 mA ∆ 600 kHz ACP1 ––– ––– –65 dBc ∆ 900 kHz ACP2 ––– ––– –70 dBc Occupied Band Width ––– ––– ––– 288 KHz 9 GND (base) Note: 1. Dimension of leads: 0.25 × 0.5 2. Tolerance of dimension of leads interval: ±0.3 3. Tolerance of dimension except indications: ±0.3 4. Surface Leads : Tin Plating (Iron) (Material) 1895 3 8 RF OUT Unit : mm Max 2 5 GND 7 VD3 Type f 4 VD12 6 VG3 ρ in Po = +35 dBm Non-modulation ––– ––– 2.0 ––– ––– ––– ––– –70 dBc Out Band ––– < 6 GHz f= ––– ––– –60 dBc 2 nd 2 SP ––– ––– –30 dBc 3 rd 3 SP ––– ––– –45 dBc 11 Stability against load variation ––– Po = +35 dBm Load VSWR = 1:3 All Phase There is no abnormal oscillating signal more than –60 dBc 12 Intensity against load variation ––– Po = +35 dBm Zl = OPEN, SHORT 10 seconds each There is no damage MA1046-1 Pin – Pout. ACP. Typical Characteristics Amplifier Specifications (MA1046-1) 39 1. Maximum Ratings (Ta=25°C) Symbol Condition Standard Unit Tc –20 ~ +70 °C Tstg –40 ~ +95 °C 1 Case temperature 2 Storage temperature 3 Voltage VD12, VD 3 VG 12 = –5.0 V, VG 3 = –3.0 V VD 12 = 7.0 V, VD 3 = 11.0 V V 4 Gate Voltage VG 12, VG 3 VD 12 = 6.0 V, VD 3 = 10.0 V VG 12 = –8.0 V, VG = –8.0 V V 5 Input Power Pin +10 dBm dBm PO 31 27 60 η 23 40 19 20 0 –11 – 88 – –7 –3 1 Input Power [dBm] 5 9 – 89 – Additional Effciency [%] Items VD12 = 6 V, VD3 = 10 V VG12 = –5 V, VG3 = –3 V 35 Output Power [dBm] No. Unit Min Frequency 1 RF IN 50 Max. Standard 1 i 0.5 FEATURES APPLICATION Condition 57 3.6 The MA1046-1 is a 1.9 GHz band power amplifier (Po = +3.1W), constructed by 3 stages of GaAs MESFET, RF matching circuit, and DC bias circuit. The shield cap is made of metal. Input and Output impedances are designed to 50Ω. 10 DESCRIPTION