RF Power Field Effect Transistor LDMOS, 1800 — 2000 MHz, 90W, 26V 5/14/04 MAPLST1820-090CF Preliminary Package Style Features Designed for base station applications in the 1805-1880MHz or 1930-1990MHz Frequency Band. Suitable for GSM, EDGE, TDMA, CDMA, and multi-carrier amplifier applications Q Typical EDGE performance @ 1880MHz, 26V, Idq=900mA: Q Output Power: 45W Q Power Gain: 13dB (typ.) Q Efficiency: 35% (typ.) P-240 Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS +20, -20 Vdc Total Power Dissipation @ TC = 25 °C PD 206 W Storage Temperature TSTG -40 to +150 °C Junction Temperature TJ +200 °C Symbol Max Unit RΘJC 0.85 ºC/W Thermal Characteristics Characteristic Thermal Resistance, Junction to Case NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 1800 — 2000 MHz, 90W, 26V MAPLST1819-090CF 5/14/04 Preliminary Characteristic Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS — — 10 µAdc Gate—Source Leakage Current (VGS = 5 Vdc, VDS = 0) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 26 Vdc, Id = 60 mA) VGS(th) 2 — 5 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, Id = 900 mA) VDS(on) 3 — 0.4 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, Id = 1 A) VDS(on) — 0.10 — Vdc Forward Transconductance (VGS = 10 Vdc, Id = 1 A) Gm — 7.0 — S Crss — 4.5 — pF Common-Source Amplifier Gain (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W) Gp — 13 — dB Drain Efficiency (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W) EFF (ŋ) — 35 — % Input Return Loss (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W) IRL — -10 — dB Output VSWR Tolerance (VDS = 26 Vdc, IDQ = 900 mA, f = 1880 MHz, POUT = 90 W, VSWR = 5:1, All Phase Angles at Frequency of Tests) Ψ DC CHARACTERISTICS @ 25ºC Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) DYNAMIC CHARACTERISTICS @ 25ºC Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 1800 — 2000 MHz, 90W, 26V MAPLST1819-090CF 5/14/04 Preliminary 45 1880MHz, 26VDC, IDQ=900mA 13 40 12 35 11 30 10 25 9 20 Gain 8 Efficiency 15 7 EVM 10 6 Eff./EVM (%) Gain (dB) 14 5 5 0 28 30 32 34 36 38 40 42 44 46 48 Pout (avg.) dBm Graph 1. EDGE: Gain and Error Vector Magnitude vs. Output Power -35 ACPR (dBc) 50 1880MHz, 26VDC, IDQ=900mA 45 -40 40 -45 35 -50 30 ACPR (400KHz) -55 ACPR (600kHz) 25 -60 Eff (%) 20 -65 15 -70 10 -75 5 -80 Efficiency (%) -30 0 35 37 39 41 43 45 47 49 Pout (dBm) Graph 2. EDGE: Efficiency and Adjacent Channel Power Ratio vs. Output Power 3 RF Power LDMOS Transistor, 1800 — 2000 MHz, 90W, 26V MAPLST1819-090CF 5/14/04 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 4 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020