MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC44V3436 3.4~3.6GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC44V3436 is an internally impedance matched GaAs power FET especially designed for use in 3.4~3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTLINE DRAWING Until : millimeters (inches) (1) FEATURES (TARGET) Class A operation Internally matched to 50 (Ω) system High output power P1dB=25W (TYP.) @f=3.4~3.6GHz High power gain GLP=12dB (TYP.) @f=3.4~3.6GHz High power added efficiency P.A.E.=36% (TYP.) @f=3.4~3.6GHz Loe distortion [item -51] IM3= -45dBc (TYP.) @Po=33.5dBm S.C.L. (2) (3) APPLICATION item 01 : 3.4~3.6GHz band power amplifier item 51 : 3.4~3.6GHz band digital radio communication QUALITY GRADE IG (1) GATE (2) Source (FLANGE) (3) DRAIN RECOMMENDED BIAS CONDITIONS VDS=10V ID=6.4A RG=25Ω GF-38 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Parameter Ratings Unit VGDO Gate to drain voltage -15 V VGSO Gate to source voltage -15 V ID IGR Drain current Reverse gate current 20 -60 A mA IGF Forward gate current 126 mA PT Total power dissipation 125 W Tch Channel temperature 175 °C Tstg Storage temperature -65 ~ +175 °C *1 < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary circuits, (ii)use of non-flammable material or (iii)prevention against any malfunction or mishap. *1 : Tc=25°C ELECTRICAL CHARACTERISTICS (Ta=25°C) Limits Symbol Test conditions Parameter Min. Typ. Max Unit IDSS Saturated drain current VDS=3V, VGS=0V — 18 — A gm Transconductance VDS=3V, ID=6.4A — 6.5 — S VGS (off) VDS=3V, ID=120mA -2 — -5 V 43 44 — dBm GLP Gate to source cut off voltage Output power at 1dB gain compression Linear power gain 11 12 — dB ID Drain current — 6.4 — A P.A.E. Power added efficiency — 36 — % 3rd order IM distortion -42 -45 — — — 1.2 dBc °C/W P1dB IM3 *2 Rth (ch-c) Thermal resistance VDS=10V, ID (RF off)=6.4A, f=3.4-3.6GHz *3 ∆Vf method *2 : item-51, 2 tone test, Po=33.5dBm Single Carrier Level, f=3.4, 3.5, 3.6GHz, ∆f=10MHz *3 : Channel to case as of Feb.'98 MITSUBISHI ELECTRIC