MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V5867 5.8∼6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC36V5867 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ∼ 6.75GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. Unit : millimeters 21.0 +/-0.3 (1) 2MIN 0.6 +/-0.15 (2) 12.9 +/-0.2 ● Class A operation ● Internally matched to 50(ohm) system ● High output power P1dB = 36dBm (TYP.) @ f=5.8 ∼ 6.75 GHz ● High power gain GLP = 10 dB (TYP.) @ f=5.8 ∼ 6.75 GHz (2) 2MIN R-1.6 11.3 FEATURES (3) 10.7 APPLICATION 0.1 12.0 0.2 VDS = 10 (V) ID=1.2(A) RG=100 (ohm) 1.6 4.5 +/-0.4 RECOMMENDED BIAS CONDITIONS (1) GATE (2) SOURCE (FLANGE) (3) DRAIN GF-8 ABSOLUTE MAXIMUM RATINGS (Ta=25deg.C) 2.6 +/-0.2 17.0 +/-0.2 VSAT < Keep safety first in your circuit designs! > Mitsubishi Electric Corporation puts the maximum effort into Symbol Parameter VGDO Gate to drain voltage VGSO Gate to source voltage ID Drain current IGR Revese gate current IGF Forward gate current PT *1 Total power dissipation Tch Channel temperature Tstg Storage temperature *1 : Tc=25deg.C Ratings -15 -15 3.75 -10 21 25 175 -65 / +175 ELECTRICAL CHARACTERISTICS Symbol Parameter IDSS Saturated drain current gm Transconductance VGS(off) Pinch-off voltage P1dB Output power at 1dB gain GLP Linear power gain ID Drain Current P.A.E. Power added efficiency Rth(ch-c) Thermal resistance *1 : Channel-case Unit V V A mA mA W deg.C deg.C making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against any malfunction or mishap. (Ta=25deg.C) Test conditions VDS=3V,VGS=0V VDS=3V,ID=1.1A VDS=3V,ID=10mA VDS=10V,ID(RF off)=1.2A. f=5.8 ∼ 6.75GHz *1 delta Vf method MITSUBISHI ELECTRIC Min. 35.0 8.5 - Limits Typ. 1 36.0 10.0 30 5 Unit Max. 3.75 -4.5 1.8 6 A S V dBm dB A % deg.C/W MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V5867 5.8∼6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25deg.C) P1dB,GLP vs. f 40 16 15 P1dB 38 14 37 13 36 12 GLP 35 11 34 10 VDS=10V IDS=1.2A 33 9 32 LINEAR POWER GAIN GLP(dB) OUTPUT POWER P1dB(dBm) 39 8 31 7 5.6 5.8 6.0 6.2 6.4 6.6 FREQUENCY(GHz) 6.8 7.0 S parameters ( Ta=25deg.C , VDS=10(V),IDS=1.2(A) ) S-Parameters (TYP.) f S11 S21 S12 S22 (GHz) 5.80 Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) 0.48 155 3.409 -29 0.07 -76 0.33 179 5.90 0.47 136 3.426 -42 0.07 -91 0.29 164 6.00 0.46 116 3.472 -55 0.07 -104 0.26 147 6.10 0.44 98 3.494 -70 0.07 -117 0.24 132 6.20 0.42 79 3.465 -84 0.08 -132 0.21 114 6.30 0.40 60 3.446 -98 0.08 -145 0.20 96 6.40 0.39 39 3.397 -112 0.08 -157 0.19 77 6.50 0.37 17 3.356 -126 0.08 -172 0.18 57 6.60 0.37 -7 3.297 -141 0.08 173 0.18 34 6.70 0.38 0.41 -33 -58 3.221 3.116 -156 -171 0.08 0.08 161 146 0.18 0.19 12 -12 6.80 MITSUBISHI ELECTRIC MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V5867 5.8 ~ 6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004