KSC2715 KSC2715 FM RADIO AMP, MIX, CONV, OSC, IF AMP 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 35 Units V VCEO VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 4 V IC Collector Current 50 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=35V, IE=0 Min. Typ. IEBO Emitter Cut-off Current VEB=4V, IC=0 hFE DC Current Gain VCE=12V, IC=2mA VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.4 VBE (on) Base-Emitter On Voltage IC=10mA, IB=1mA 1.0 V fT Current Gain Bandwidth Product VCE=10V, IC=1mA 400 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.2 pF 40 Max. 0.1 Units µA 1 µA 240 100 2 V hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 Marking B1 O hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2715 Typical Characteristics 1000 IB = 90µA VCE=12V IB = 80µA 8 IB = 70µA hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 10 IB = 60µA 6 IB = 50µA IB = 40µA 4 IB = 30µA IB = 20µA 2 100 IB = 10µA 10 0.1 0 0 2 4 6 8 10 1 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 2. DC current Gain 32 10 IC =10IB VBE(sat) V CE(sat) 0.01 0.1 1 24 20 16 12 8 4 0 0.0 10 10 Cob[pF], CAPACITANCE f = 1MHz IE=0 1 0.1 100 VCB[V], COLLECTOR BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation 0.4 0.6 0.8 1.0 1.2 Figure 4. Base-Emitter On Voltage fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10 0.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT 1 VCE=12V 28 IC[mA], COLLECTOR CURRENT 0.1 100 IC[mA], COLLECTOR CURRENT Figure 1. Static Characteristic 1 10 1000 VCE = 10V 100 10 1 10 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, September 2002 KSC2715 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1