FJX1182 FJX1182 Low Frequency Power Amplifier 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings -35 Units V VCEO VEBO Collector-Emitter Voltage -30 V Emitter-Base Voltage -5 IC V Collector Current -500 mA PC Collector Power Dissipation 150 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB= -35, IE=0 IEBO Emitter Cut-off Current VEB= -5V, IC=0 hFE1 hFE2 DC Current Gain VCE= -1V, IC= -100mA V CE= -6V, IC= -400mA Min. Typ. 70 25 Max. -0.1 Units µA -0.1 µA 240 VCE (sat) Collector-Emitter Saturation Voltage IC= -100mA, IB= -10mA -0.1 -0.25 V VBE (on) Base-Emitter On Voltage IC= -100mA, VCE= -1V -0.8 -1.0 V fT Current Gain Bandwidth Product IC= -20mA, VCE= -6V 200 MHz Cob Output Capacitance VCB= -6V, IE= 0 f=1MHz 13 pF hFE Classification Classification O Y hFE1 70 ~ 140 120 ~ 240 Marking SD X Grade ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJX1182 Typical Characteristics 1000 -200 IB =-1.4mA IB =-1.2mA -160 -140 hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT VCE = -1V IB =-1.6mA -180 IB =-1.0mA IB =-0.8mA -120 -100 IB =-0.6mA -80 IB =-0.4mA -60 -40 100 IB =-0.2mA -20 10 -0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -1 -10 -10 -1000 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain -10 -1000 VCE = -1V IC = 10 IB -1 IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -100 VBE(sat) sat) V CE( -0.1 -100 -10 -1 -0.01 -1 -10 -100 -1000 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 20 f = 1MHz IE=0 Cob[pF], CAPACITANCE 10 1 -1 -10 -100 -300 VCB [V], COLLECTOR BASE VOLTAGE Figure 5. Collector Output Capacitance ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJX1182 Package Dimensions SOT-323 2.00±0.20 3° 1.25±0.10 2.10±0.10 0.95±0.15 0.90 ±0.10 +0.05 0.05 –0.02 1.00±0.10 1.30±0.10 0.275±0.100 3° +0.04 0.135 –0.01 0.10 Min Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1