KSC2784 KSC2784 Audio Frequency Low Noise Amplifier • Complement to KSA1174 TO-92S 1 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 120 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 120 5 V V IC Collector Current 50 mA IB Base Current 10 mA PC Collector Power Dissipation 300 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=120V, IE=0 Min. Typ. Max. 50 Units nA 50 nA IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE1 hFE2 DC Current Gain VCE=6V, IC=0.1mA VCE=6V, IC=1mA 150 200 580 600 1200 VBE (on) Base Emitter On Voltage VCE=6V, IC=1mA 0.55 0.59 0.65 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.07 0.3 fT Current Gain Bandwidth Product VCE=6V, IC=1mA Cob Output Capacitance VCB=30V, IE=0, f=1MHz NL Noise Level 50 V V 110 MHz 1.6 2.5 pF 25 40 mV hFE2 Classification Classification P F E U hFE2 200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC2784 Typical Characteristics 1.0 10 IB = 1.4µA 8 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT IB = 16µA IB = 14µA IB = 12µA 6 IB = 10µA IB = 8µA 4 IB = 6µA IB = 4µA 2 IB = 1.2µA 0.8 IB = 1.0µA IB = 0.8µA 0.6 IB = 0.6µA 0.4 IB = 0.4µA 0.2 IB = 0.2µA IB = 2µA 0.0 0 0 1 2 3 4 0 5 VCE[V], COLLECTOR-EMITTER VOLTAGE 80 100 10 VCE(sat), VBE(sat) [V], SATURATION VOLTAGE VCE = 6 V Pulse Test 800 hFE, DC CURRENT GAIN 60 Figure 2. Static Characteristics 1000 600 400 200 0.1 1 10 100 IC = 10 IB Pulse Test 1 VBE (sat) 0.1 VCE (sat) 0.01 0.1 1 10 100 IC [mA], COLLECTOR CURRENT IC [mA], COLLECTOR CURRENT Figure 3. DC Currnet Gain Figure 4. Saturation Voltage 10 10000 f = 1 MHz IE = 0 VCE = 10V Cob[pF], OUTPUT CAPACITANCE fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT 40 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristics 0 0.01 20 1000 100 10 0.1 1 10 IC [mA], COLLECTOR CURRENT Figure 5. fT - IC ©2002 Fairchild Semiconductor Corporation 100 1 0.1 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 6. Output Capacitance Rev. A2, September 2002 KSC2784 Package Dimensions TO-92S 4.00 ±0.20 (1.10) 3.70 ±0.20 2.31 ±0.20 14.47 ±0.30 0.66 MAX. 0.49 ±0.10 1.27TYP [1.27±0.20] 1.27TYP [1.27±0.20] +0.10 0.35 –0.05 2.86 ±0.20 0.77 ±0.10 3.72 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1