www.fairchildsemi.com MC78TXX 3-Terminal 3A Positive Voltage Regulator Features Description • • • • • • • • This family of fixed voltage regulators are monolithic integrated circuit capable of driving loads in excess of 3.0 A. Output Current in Excess of 3.0A Output Transistor Safe Operating Area Compensation Power Dissipation :25W Internal Short Circuit Current Limiting Internal Thermal Overload Protection Output Voltage Offered in 4% Tolerance No External Components Required Output Voltage of 5,12 and 15V TO-220 GND 1 1.Input 2. GND 3. Output Internal Block Diagram INPUT SERIES PASS ELEMENT 1 CURRENT GENERATOR STARTING CIRCUIT REFERENCE VOLTAGE OUTPUT 3 SOA PROTECTION ERROR AMPLIFIER THERMAL PROTECTION GND 2 Rev. 1.0.1 ©2002 Fairchild Semiconductor Corporation MC78TXX Absolute Maximum Ratings Parameter Symbol Value Unit Input Voltage (for VO = 5V to 12V) (for VO = 15V) VI 35 40 V V Power Dissipation PD Internally limited Thermal Resistance, Junction to Air (Note1, 2) Ta = +25°C RθJA 65 °C/W Thermal Resistance, Junction to Case (Note1) Tc = +25°C RθJC 2.5 °C/W Operating Junction Temperature Range Storage Temperature Range TJ 0 ~ +125 °C TSTG -65 ~ +150 °C Note: 1. Thermal resistance test board Size: 76.2mm * 114.3mm * 1.6mm(1S0P) JEDEC standard: JESD51-3, JESD51-7 2. Assume no ambient airflow. Electrical Characteristics(MC78T05) (VI = 10V, IO = 3.0 A, 0°C ≤ TJ ≤ +125°C, Po ≤ PMAX (Note3), unless otherwise specified. ) Parameter Output Voltage Symbol Vo Conditions 5mA ≤ Io ≤ 3.0A , TJ = +25°C 7.3V ≤ VI ≤ 20V, 5mA ≤ Io ≤ 2.0A Min. Typ. Max. Unit 4.8 4.75 5.0 5.0 5.2 5.25 V - 3.0 25 mV Line Regulation (Note4) ∆VO 7.2V ≤ VI ≤ 35V , Io=5mA, TJ =+25°C 7.2V ≤ VI ≤ 35V , Io=1.0A, TJ = +25°C 7.5V ≤ VI ≤ 20V, Io =2.0A, TJ = +25°C 8.0V ≤ VI ≤ 12V, Io =3.0A, TJ = +25°C Load Regulation (Note4) ∆VO 5mA ≤ Io ≤ 3.0A , TJ = +25°C 5mA ≤ Io ≤ 3.0A - 10 15 30 80 mV mV Pulse =10ms, P = 20W TA = +25°C - 0.002 0.03 %Vo/W IQ 5mA ≤ Io ≤ 3.0A , TJ = +25°C 5mA ≤ Io ≤ 3.0A - 3.5 4.0 5.0 6.0 mA mA Quiescent Current Change ∆IQ 7.2V ≤ VI ≤ 35V, Io = 5mA TJ = +25°C ; 7.5V ≤ VI ≤ 20V, Io =2.0A ; 5mA ≤ Io ≤ 3.0A, TJ = +25°C - 0.1 0.8 mA Ripple Rejection RR f = 120Hz, 8V ≤ VI ≤ 18V, Io = 2.0A TJ = +25°C - 75 - dB Dropout Voltage VD Io = 3A ,TJ = +25°C - 2.2 2.5 V Output Noise Voltage VN TA = +25°C, 10Hz ≤ f ≤ 100kHz - 10 - µV/Vo Thermal Regulation Quiescent Current REGT Peak Output Current IPK TA = +25°C - 5.0 - A Output Resistance Ro f = 1.0kHz - 2.0 - mΩ Short Circuit Current Limit Isc VI = 35V, TJ =+25°C - 1.5 2.5 A Io = 5.0mA - 0.2 - mV/°C Average Temperature ∆VO/∆T Coefficient of Output Voltage Note: 3. Although power dissipation is internally limited, specifications apply only for PO ≤ Pmax, Pmax = 25W 4. Load and line regulation are specified at constant junction temperature. Change in Vo due heating effects must be taken into account separately. Pulse testing with low duty is used. 2 MC78TXX Electrical Characteristics(MC78T12) (Continued) (VI = 19V, IO = 3.0 A, 0°C ≤ TJ ≤ +125°C, Po ≤ PMAX (Note1), unless otherwise specified. ) Parameter Output Voltage Symbol Vo Conditions 5mA ≤ Io ≤ 3.0A , TJ =+25°C 14.5V ≤ VI ≤ 27V, 5mA ≤ Io ≤ 2.0A Min. Typ. Max. Unit 11.5 11.4 12 12 12.5 12.8 V - 6.0 45 mV Line Regulation (Note2) ∆VO 14.5V ≤ VI ≤ 35V, Io=5mA, TJ =+25°C 14.5V ≤ VI ≤ 35V, Io=1.0A, TJ =+25°C 14.9V ≤ VI ≤ 28V, Io =2.0A, TJ =+25°C 16V ≤ VI ≤ 22V, Io =3.0A, TJ =+25°C Load Regulation (Note2) ∆VO 5mA ≤ Io ≤ 3.0A, TJ =+25°C 5mA ≤ Io ≤ 3.0A - 10 15 30 80 mV mV Pulse =10ms, P = 20W TA = +25°C - 0.002 0.03 %Vo/W 5mA ≤ Io ≤ 3.0A, TJ =+25°C 5mA ≤ Io ≤ 3.0A - 3.5 4.0 5.0 6.0 mA mA 14.5V ≤ VI ≤ 35V, Io = 5mA TJ =+25°C ; 14.9V ≤ VI ≤ 27V, Io =2.0A ; 5mA ≤ Io ≤ 3.0A, TJ =+25°C - 0.1 0.8 mA Thermal Regulation Quiescent Current Quiescent Current Change REGT IQ ∆IQ Ripple Rejection RR f = 120Hz, 15V ≤ VI ≤ 25V, Io = 2.0A TJ =+25°C - 67 - dB Dropout Voltage VD Io = 3A,TJ =+25°C - 2.2 2.5 V Output Noise Voltage VN TA =+25°C, 10Hz ≤ f ≤ 100kHz - 10 - µV/Vo Peak Output Current IPK TA =+25°C - 5.0 - A Output Resistance Ro f = 1.0kHz - 2.0 - mΩ Short Circuit Current Limit Isc VI = 35V, TJ =+25°C - 1.5 2.5 A Io = 5.0mA - 0.5 - mV/°C Average Temperature ∆VO/∆T Coefficient of Output Voltage Note: 1. Although power dissipation is internally limited, specifications apply only for PO ≤ Pmax, Pmax = 25W 2. Load and line regulation are specified at constant junction temperature. Change in Vo due heating effects must be taken into account separately. Pulse testing with low duty is used. ( PMAX = 25W) 3 MC78TXX Electrical Characteristics(MC78T15) (Continued) (VI = 23V, IO = 3.0 A, 0°C ≤ TJ ≤ +125°C, Po ≤ PMAX (Note1), unless otherwise specified. ) Parameter Output Voltage Symbol Vo Conditions 5mA ≤ Io ≤ 3.0A, TJ =+25°C 17.5V ≤ VI ≤ 30V, 5mA ≤ Io ≤ 2.0A Min. Typ. Max. Unit 14.4 14.25 15 15 15.6 15.75 V - 7.5 55 mV Line Regulation (Note2) ∆VO 17.6V ≤ VI ≤ 40V, Io=5mA, TJ =+25°C 17.6V ≤ VI ≤ 40V, Io=1.0A, TJ =+25°C 18V ≤ VI ≤ 30V, Io =2.0A, TJ =+25°C 20V ≤ VI ≤ 26V, Io =3.0A, TJ =+25°C Load Regulation (Note2) ∆VO 5mA ≤ Io ≤ 3.0A, TJ =+25°C 5mA ≤ Io ≤ 3.0A - 10 15 30 80 mV mV Pulse =10ms, P = 20W TA = +25°C - 0.002 0.03 %Vo/W 5mA ≤ Io ≤ 3.0A, TJ =+25°C 5mA ≤ Io ≤ 3.0A - 3.5 4.0 5.0 6.0 mA mA 17.6V ≤ VI ≤ 40V, Io = 5mA TJ =+25°C ; 18V ≤ VI ≤ 30V, Io =2.0A ; 5mA ≤ Io ≤ 3.0A, TJ =+25°C - 0.1 0.8 mA Thermal Regulation Quiescent Current REGT IQ ∆IQ Quiescent Current Change Ripple Rejection RR f = 120Hz, 18.5V ≤ VI ≤ 28.5V, Io = 2.0A TJ =+25°C - 65 - dB Dropout Voltage VD Io = 3A ,TJ = +25°C - 2.2 2.5 V Output Noise Voltage VN TA = +25°C, 10Hz ≤ f ≤ 100kHz - 10 - µV/Vo Peak Output Current IPK TA = +25°C - 5.0 - A Output Resistance Ro f = 1.0kHz - 2.0 - mΩ Short Circuit Current Limit Isc VI = 40V, TJ = +25°C - 1.0 2.0 A Io = 5.0mA - 0.5 - mV/°C Average Temperature ∆VO/∆T Coefficient of Output Voltage Note: 1. Although power dissipation is internally limited, specifications apply only for PO ≤ Pmax, Pmax = 25W 2. Load and line regulation are specified at constant junction temperature. Change in Vo due heating effects must be taken into account separately. Pulse testing with low duty is used. ( PMAX = 25W) 4 MC78TXX Typical Application INPUT 1 0.33 µF KA78TXX MC78TXX 2 3 OUTPUT 0. 1 µF Note: 1. To specify an output voltage, substitute voltage value for “XX”. 2. Bypass Capacitors are recommend for optimum stability and transient response and should be located as close as possible to the regulator 5 MC78TXX Mechanical Dimensions Package Dimensions in millimeters TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 (45° 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.00 ±0.20 6 10.08 ±0.30 (1.00) 13.08 ±0.20 ) 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 MC78TXX Ordering Information Product Number Package Operating Temperature TO-220 0 ~ +125°C MC78T05CT MC78T12CT MC78T15CT 7 MC78TXX DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 11/12/02 0.0m 001 Stock#DSxxxxxxxx 2002 Fairchild Semiconductor Corporation