MOTOROLA SEMICONDUCTOR TECHNICAL DATA MAC12 SERIES * *Motorola preferred devices TRIACS TRIACS 12 AMPERES RMS 400 thru 800 VOLTS Silicon Bidirectional Thyristors Designed for high performance full–wave ac control applications where high noise immunity and commutating di/dt are required. • Blocking Voltage to 800 Volts • On-State Current Rating of 12 Amperes RMS at 70°C • Uniform Gate Trigger currents in Three Modes • High Immunity to dv/dt — 250 V/µs minimum at 125°C • High Commutating di/dt — 6.5 A/ms minimum at 125°C • Industry Standard TO–220 AB Package • High Surge Current Capability — 120 Amperes MT2 MT1 MT2 G CASE 221A–06 (TO-220AB) Style 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Off-State Voltage (1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) Symbol Value Unit VDRM Volts 400 600 800 MAC12D MAC12M MAC12N On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 70°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range IT(RMS) 12 A ITSM 100 A I2t 41 A2sec PGM 16 Watts PG(AV) 0.35 Watts TJ – 40 to +125 °C Tstg – 40 to +150 °C RθJC RθJA 2.2 62.5 °C/W TL 260 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IDRM — — — — 0.01 2.0 mA OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) TJ = 25°C TJ =1 25°C (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. This document contains information on a new product. Specifications and information herein are subject to change without notice. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data 3–53 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Min Typ Max Unit Peak On-State Voltage* (ITM = ±17 A) VTM — — 1.85 Volts Continuous Gate Trigger Current (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IGT 5.0 5.0 5.0 13 16 18 35 35 35 — 20 40 — — 20 30 50 80 0.5 0.5 0.5 0.69 0.77 0.72 1.5 1.5 1.5 (dv/dt)c 6.5 — — A/ms dv/dt 250 — — V/µs Characteristic ON CHARACTERISTICS Hold Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA) IH Latch Current (VD = 24 V, IG = 35 mA) MT2(+), G(+); MT2(–), G(–) MT2(+), G(–) IL Gate Trigger Voltage (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) mA mA mA VGT Volts DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current* (VD = 400 V, ITM =4.4A, Commutating dv/dt = 18 V/µs, Gate Open, TJ = 125°C, f = 250 Hz, No Snubber) Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 3–54 Motorola Thyristor Device Data