UTC MCR101 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS DESCRIPTION PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion equipment. 1 TO-92 DESCRIPTION *Sensitive Gate Allows Triggering by Micro controllers and Other Logic circuits *Blocking Voltage to 600V *On-State Current Rating of 0.8A RMS at 80°C *High Surge Current Capability – 10A *Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design *Immunity to dV/dt – 20V/µsec Minimum at 110°C *Glass-Passivated Surface for Reliability and Uniformity 1: GATE 2: ANODE 3:CATHODE: THERMAL CHARACTERISTICS SYMBOL MAX UNIT Thermal Resistance, Junction to Case PARAMETER RθJC 75 °C/W Thermal Resistance, Junction to Ambient RθJA 200 °C/W TL 260 °C MAX UNIT Lead Solder Temperature (<1/16” from case, 10 secs max) ABSOLUTE MAXIMUM RATINGS PARAMETER Peak Repetitive Off-State Voltage(note) (TJ=-40 to 110°C, Sine Wave, 50 to 60Hz; Gate Open) MCR101-4 MCR101-6 MCR101-8 On-Sate RMS Current (Tc=80°C) 180° Condition Angles Peak Non-Repetitive Surge Current (1/2 cycle, Sine Wave, 60Hz, TJ=25°C) UTC SYMBOL VDRM,VRRM V 200 400 600 IT(RMS) 0.8 A ITSM 10 A UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R301-009,B UTC MCR101 SCR PARAMETER SYMBOL MAX UNIT I2t 0.415 A2s Forward Peak Gate Power (TA=25°C, Pulse Width ≤1.0µs) PGM 0.1 W Forward Average Gate Power (TA=25°C, t=8.3ms) PG(AV) 0.1 W Peak Gate Current – Forward (TA=25°C, Pulse Width≤1.0µs) IGM 1 A Peak Gate Voltage – Reverse (TA=25°C, Pulse Width≤1.0µs) VGRM 5 V TJ -40 to +110 °C Circuit Fusing Considerations (t=8.3 ms) Operating Junction Temperature Range @ Rated VRRM and VDRM Storage Temperature Range Tstg -40 to +150 °C Note: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise stated) PARAMETER TEST CONDITION SYMBOL VD=Rated VDRM and VRRM; RGK=1kΩ IDRM, IRRM MIN TYP MAX UNIT OFF CHARACTERISTICS Peak Forward or Reverse Blocking Current Tc=25°C Tc=125°C 10 100 µA µA 1.7 V ON CHARACTERISTICS Peak Forward On-State Voltage (Note1) Gate Trigger Current (Continuous dc)(note2) Holding Current (note 3) Tc=25 °C Tc=-40 °C Tc=25 °C Tc=-40 °C Latch Current Gate Trigger Current (continuous dc) (Note 2) ITM=1A Peak @ TA=25°C VTM VAK=7Vdc, RL=100Ω, TC=25°C IGT 40 200 µA VAK=7Vdc, initiating current=20mA IH 0.5 5 10 mA VAK=7V, Ig=200µA IL 0.6 10 15 mA VAK=7Vdc, RL=100Ω VGT 0.62 0.8 1.2 V Tc=25 °C Tc=-40 °C DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage VD=Rated VDRM, Exponential Waveform, RGK=1000Ω, TJ=110°C dV/dt Critical Rate of Rise of On-State Current IPK=20A; Pw=10µsec; diG/dt=1A/µsec, Igt=20mA di/dt 20 35 V/µs 50 A/µs Notes: 1. Indicates Pulse Test Width≤1.0ms, duty cycle ≤1% 2. RGK=1000Ω included in measurement. 3. Does not include RGK in measurement. UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-009,B UTC MCR101 SCR VOLTAGE CURRENT CHARACTERISTIC OF SCR SYMBOL VDRM IDRM VRRM IRRM VTM IH PARAMETER Peak Repetitive Off Stat Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current CLASSIFICATION OF IGT RANK RANGE UTC B 48~105µA C 95~200µA AA 8~16µA AB 14~21µA AC 19~25µA AD 23~52µA UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R301-009,B UTC MCR101 UTC SCR UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R301-009,B