MAC97… Silicon Bidirectional Triode Thyristors MT2 G MT1 1.MT1 2.G 3. MT2 TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (TJ = 25 C unless otherwise noted.) O Parameter Symbol Value Unit VDRM 200 400 600 V IT(RMS) 0.8 A ITSM 8 A I2t 0.26 A2s Peak Gate Voltage ( t ≤ 2 μs) VGM 5 V Peak Gate Power ( t ≤ 2 μs) PGM 5 W PG(AV) 0.1 W Peak Gate Current (t ≤ 2 μs) IGM 1 A Operating Junction Temperature Range TJ -40 to 110 O Storage Temperature Range TS -40 to 150 O Symbol Max. Thermal Resistance, Junction to Case RθJC 75 O Thermal Resistance, Junction to Ambient RθJA 200 O Peak Repetitive Off-state Voltage(Gate Open, TJ = -40 to 110 OC)1) 1/2 Sine Wave 50 to 60 Hz, Gate Open MAC97-4, MAC97A4 MAC97-6, MAC97A6 MAC97-8, MAC97A8 On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = 50 OC) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, Ta = 110 OC) Circuit Fusing Considerations TJ = -40 to 110 OC (t = 8.3 ms) Average Gate Power (TC = 80 OC, t ≤ 8.3 ms) C C Thermal Characteristics Parameter SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 03/03/2006 Unit C/W C/W MAC97… Characteristics (TC = 25 OC, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted) Parameter 1) Peak Bloking Current VD = Rated VDRM, TJ = 110 OC, Gate Open Peak On-State Voltage (Either Direction) (ITM = 1.1 A Peak; Pulse Width ≤ 2 ms, Duty Cycle ≤ 2 %) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) MAC97 MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) MAC97A Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ohms) MT2(+), G(+) All Types MT2(+), G(-) All Types MT2(-), G(-) All Types MT2(-), G(+) All Types (VD = Rated VDRM, RL = 10 KOhms ,TJ = 110 OC MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) All Types MT2(-), G(+) All Types Holding Current (VD = 12 Vdc, ITM = 200 mA, Gate Open) Symbol Min. Typ. Max. Unit IRRM 0.1 mA VTM 1.65 V IGT 10 10 10 10 mA 5 5 5 7 2 2 2 2.5 VGT V 0.1 0.1 IH 5 mA Gate Controlled Turn-On Time 2 μs tgt (VD = Rated VDRM, ITM = 1 Apk, IG = 25 mA) Critical Rate-of-Rise of Commutation Voltage (f = 250 Hz, ITM = 1 A, Commutating di/dt = 1.5 A/ms, On-State 1.5 V/μs dv/dtc Current Duration=2ms, VDRM = 200 V, Gate Unenergized, TC = 110 O C, Gate Source Resistance = 150 Ohms) Critical Rate-of-Rise of Off Sate Voltage dv/dt 10 V/μs (Vpk = Rated VDRM, TC = 110 OC,Gate Open, Exponential Method) 1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 03/03/2006