Order this document by T2322/D SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors . . . designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances their use in low-power phase control and load-switching applications. • • • • Very High Gate Sensitivity Low On-State Voltage at High Current Levels Glass-Passivated Chip for Stability Small, Rugged Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability *Motorola preferred devices SENSITIVE GATE TRIACs 2.5 AMPERES RMS 200 thru 600 VOLTS MT2 G MT2 MT1 MT2 CASE 77-08 (TO-225AA) STYLE 5 MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Off-State Voltage(1) (TJ = 25 to 100°C, Gate Open) T2322, T2323 Suffix Symbol Value Unit B D M VDRM 200 400 600 Volts IT(RMS) 2.5 Amps ITSM 25 Amps I2t 2.6 A2s PGM 10 Watts PG(AV) 0.15 Watt IGM 0.5 Amp TJ –40 to +110 °C Tstg –40 to +150 °C — 8 in. lb. RMS On-State Current (TC = 70°C) (Full-Cycle Sine Wave 50 to 60 Hz) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz) Circuit Fusing (t = 8.3 ms) Peak Gate Power (1 µs) Average Gate Power (TC = 60°C + 38.3 ms) Peak Gate Current (1 µs) Operating Junction Temperature Range Storage Temperature Range Mounting Torque (6-32 Screw)(2) 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting Torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Main terminal 2 and heat-sink contact pad are common. For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +200°C, for 10 seconds. Consult factory for lead bending options. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 3.5 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage unless otherwise noted.) Characteristic Peak Blocking Current (VD = Rated VDRM, Gate Open) Symbol Min Typ Max Unit — — — 0.2 10 0.75 µA mA — — 1.7 1.7 2.6 2.2 IDRM TJ = 25°C TJ = 100°C Peak On-State Voltage* (ITM = 10 A) VTM T2323 Series T2322 Series Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 Ω) All Modes MT2(+), G(+); MT2(–), G(–) MT2(+), G(–); MT2(–),I G(+) Volts IGT T2322 Series T2323 Series T2323 Series mA — — — — — — 10 25 40 — 0.15 1 — 2.2 — Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 30 Ω, TC = 25°C) (VD = VDRM, RL = 125 Ω, TC = 100°C) VGT Holding Current (VD = 12 V, ITM = 150 mA, Gate Open) IH — 15 30 mA Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 10 A pk, IG = 60 mA) tgt — 1.8 2.5 µs dv/dt 10 100 — V/µs dv/dt(c) 1 4 — V/µs Critical Rate-of-Rise of Off-State Voltage (VD = Rated VDRM, Exponential Waveform, TC = 100°C) Critical Rate-of-Rise of Commutation Voltage (VD = Rated VDRM, ITM = 3.5 A pk, Commutating di/dt = 1.26 A/ms, Gate Unenergized, TC = 90°C) *Pulse Test: Pulse Width 2 Volts p 300 µs, Duty Cycle p 2%. Motorola Thyristor Device Data PACKAGE DIMENSIONS –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H STYLE 5: PIN 1. MT 1 2. MT 2 3. GATE K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ––– M CASE 77-08 (TO–225AA) Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *T2322/D* T2322/D