Freescale Semiconductor Technical Data Document Number: MC13820/D Rev. 1.1, 09/2005 MC13820 Package Information Plastic Package Case 1345 (QFN–12) MC13820 Low Noise Amplifier with Bypass Switch 1 Introduction The MC13820 is a high gain LNA with extremely low noise figure, designed for cellular, GPS and ISM band applications. An integrated bypass switch is included to preserve input intercept performance. The input and output match are external to allow maximum design flexibility. The MC13820 is fabricated using Motorola's advanced RF BiCMOS process using the SiGe:C option and is packaged in the QFN12 leadless package. 1.1 • • • • • Ordering Information Device Device Marking or Operating Temperature Range Package MC13820 820 QFN-12 Contents: 1 2 3 4 5 6 7 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Electrical Specifications . . . . . . . . . . . . . . . . 3 Application Information . . . . . . . . . . . . . . . . 10 Printed Circuit Board . . . . . . . . . . . . . . . . . . 23 Scattering Parameters . . . . . . . . . . . . . . . . . 26 Packaging . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Product Documentation . . . . . . . . . . . . . . . . 36 Features RF Input Frequency: 1000 MHz to 2.4 GHz Gain: 18 dB (typ) at 1575 MHz and 15.7 dB (typ) at 2140 MHz Output 3rd Order Intercept Point (OIP3): 18.5 dBm (typ) at 1575 MHz and 19.7 dBm (typ) at 2140 MHz Noise Figure (NF): 1.25 dB (typ) at 1575 MHz and 1.3 dB (typ) at 2140 MHz 1dB Compression Point (P1dB): -10 dBm (typ) at 1575 MHz and -5 dBm (typ) at 2140 MHz Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products. © Freescale Semiconductor, Inc., 2005. All rights reserved. Introduction • • • • • • Freescale’s IP3 Boost Circuitry Bypass Mode Included for Improved Intercept Point Performance Total Supply Current: 2.8 mA @ 2.7 Vdc 10 µA (typ) in Bypass Mode Bias Stabilized for Device and Temperature Variations QFN-12 Leadless Package with Low Parasitics SiGe Technology Ensures Lowest Possible Noise Figure NC 1 VCC1 2 NC NC NC 12 11 10 MC13820 9 Gnd 8 Gain 7 Enable Logic LNA Out 3 4 5 6 Rbias Emit Gnd LNA In Figure 1. Simplified Block Diagram MC13820 Technical Data, Rev. 1.1 2 Freescale Semiconductor Electrical Specifications 2 Electrical Specifications Table 1. Maximum Ratings Ratings Symbol Value Unit Supply Voltage VCC 3.3 V Storage Temperature Range Tstg -65 to 150 °C Operating Ambient Temperature Range TA -30 to 85 °C RF Input Power Prf 10 dBm Power Dissipation Pdis 100 mW Thermal Resistance, Junction to Case RθJC 24 C/W Thermal Resistance, Junction to Ambient, 4 layer board RθJA 90 C/W NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the limits in the Recommended Operating Conditions and Electrical Characteristics tables. 2. ESD (electrostatic discharge) immunity meets Human Body Model (HBM) ≤200 V, Charge Device Model (CDM) ≤450 V, and Machine Model (MM) ≤50 V. Additional ESD data available upon request. Table 2. Recommended Operating Conditions Characteristic Symbol Min RF Frequency range fRF 1000 Supply Voltage VCC 2.7 1.25 0 Typ Max Unit 2400 MHz 2.75 3 V - VCC 0.8 Min Typ Max 16 14.5 14.3 13 17.1 15.6 15.3 14.2 - 21.5 19.5 20.5 19.5 22.5 20.5 21.5 19.6 - - 1.01 0.96 1.01 0.96 1.1 1.05 1.1 1.05 V Logic Voltage Input High Voltage Input Low Voltage Table 3. Electrical Characteristics (VCC = 2.75 V, TA = 25°C, unless otherwise noted.) Characteristic Symbol |S21|2 Insertion Gain R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz R1=2 kΩ, Freq=1.575 GHz R1=2 kΩ, Freq=2.14 GHz Maximum Stable Gain and/or Maximum Available Gain1 R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz R1=2 kΩ, Freq=1.575 GHz R1=2 kΩ, Freq=2.14 GHz Minimum Noise Figure R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz R1=2 kΩ, Freq=1.575 GHz R1=2 kΩ, Freq=2.14 GHz Unit dB MSG, MAG dB NFmin dB MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 3 Electrical Specifications Table 3. Electrical Characteristics (continued) (VCC = 2.75 V, TA = 25°C, unless otherwise noted.) Characteristic Symbol Associated Gain at Minimum Noise Figure R1=1.2 kΩ, Freq=1.575 GHz R1=1.2 kΩ, Freq=2.14 GHz R1=2 kΩ, Freq=1.575 GHz R1=2 kΩ, Freq=2.14 GHz 1 Min Typ Max 21.7 19 21.7 19 22.7 19.8 22.7 19.8 - Gnf Unit dB Maximum Available Gain and Maximum Stable Gain are defined by the K factor as follows: S 2 21 MAG = ---------- ⎛ K ± K – 1⎞ ⎠ S ⎝ 12 , if K > 1, S 21 MSG = ---------S 12 , if K < 1 Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (VCC = 2.75 V, TA = 25°C, Rbias = 2 kΩ, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Frequency f - 1575 - MHz Active Gain G 17.5 18 - dB Active Noise Figure NF - 1.25 1.4 dB Active Input Third Order Intercept Point IIP3 -1.0 0.5 - dBm Active Input 1dB Compression Point P1dB -11 -10 - dBm ICC - 2.8 3.3 mA Bypass Gain G -6.0 -5.0 - dB Bypass Noise Figure NF - 4.8 5.2 dB Bypass Input Third Order Intercept Point IIP3 26 27 - dBm - 10 20 µA 1575 MHz (Refer to Figure 9) Active Current @ 2.75 V Bypass Current 1960 MHz (Refer to Figure 10) Frequency f - 1960 - MHz Active Gain G 16 16.4 - dB Active Noise Figure NF - 1.25 1.4 dB Active Input Third Order Intercept Point IIP3 0 1 - dBm Active Input 1dB Compression Point P1dB -7.0 -6 - dBm ICC - 2.8 3.3 mA Bypass Gain G -5.0 -4 - dB Bypass Noise Figure NF - 4.7 5.1 dB Bypass Input Third Order Intercept Point IIP3 23 25 - dBm - 10 20 µA Active Current @ 2.75 V Bypass Current MC13820 Technical Data, Rev. 1.1 4 Freescale Semiconductor Electrical Specifications Table 4. Electrical Characteristics Measured in Frequency Specific Tuned Circuits (continued) (VCC = 2.75 V, TA = 25°C, Rbias = 2 kΩ, unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Frequency f - 2140 - MHz Active Gain G 15.3 15.7 - dB Active Noise Figure NF - 1.3 1.4 dB Active Input Third Order Intercept Point IIP3 2.5 3.5 - dBm Active Input 1dB Compression Point P1dB -6.0 -5 - dBm ICC - 2.8 3.2 mA Bypass Gain G -4.2 -3.2 - dB Bypass Noise Figure NF - 3.2 3.6 dB Bypass Input Third Order Intercept Point IIP3 22.5 24.5 - dBm - 10 20 µA 2140 MHz (Refer to Figure 11) Active Current @ 2.75 V Bypass Current 2400 MHz (Refer to Figure 12) Frequency f - 2400 - MHz Active Gain G 13.8 14 - dB Active Noise Figure NF - 1.49 1.6 dB Active Input Third Order Intercept Point IIP3 3.5 4.0 - dBm Active Input 1dB Compression Point P1dB -5.0 -4.0 - dBm ICC - 2.8 3.2 mA Bypass Gain G -5.0 -4.0 - dB Bypass Noise Figure NF - 4.2 4.7 dB Bypass Input Third Order Intercept Point IIP3 22 24 - dBm - 10 20 µA Active Current @ 2.75 V Bypass Current MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 5 Electrical Specifications Table 5. Truth Table Enable Pin Function Disable Pin Name Low Gain High Gain Low Gain High Gain Circuit Bias VCC1 VCC1 1 1 1 1 Toggles Gain Mode (Active or Bypass) GAIN 0 1 0 1 Toggles LNA On/Off ENABLE 1 1 0 0 LNA Bias VCC3 LNA Out 1 1 1 1 NOTES: 1. 2. 3. 4. Logic state "1" equals VCC voltage. Logic state of "0" equals ground potential. VCC3 is inductively coupled to LNA OUT pin Minimum logic state “1” for enable and gain pins is 1.25 V. Maximum logic state “0” for enable and gain pins is 0.8 V. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency Rbias is 2 kohm MSG, Maximum Stable Gain; MAG, Maximum Available Gain; |S21|2, Forward Insertion Gain, (dB) 30 25 MSG 20 15 |S21|2 MAG 10 5 0 0.5 1.5 2.5 3.5 4.5 5.5 f, Frequency (GHz) Figure 2. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Rbias = 2 kΩ) MC13820 Technical Data, Rev. 1.1 6 Freescale Semiconductor Electrical Specifications MSG, Maximum Stable Gain; MAG, Maximum Available Gain; |S21|2, Forward Insertion Gain (dB) Maxim um Stable/Available Gain and Forw ard Insertion Gain vs. Frequency Rbias is 1.2 kohm 35 30 MSG M 25 20 MAG 15 |S21|2 10 5 0 0.5 1.5 2.5 3.5 4.5 f, Frequency (GHz) Figure 3. Maximum Stable/Available Gain and Forward Insertion Gain vs. Frequency (Rbias = 1.2 kΩ) Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc MSG, Maximum Stable Gain; MAG, Maximum Available Gain; |S21|2, Forward Insertion Gain (dB) 24 23 MSG/MAG 1.575 GHz 22 MSG/MAG 1.96 GHz 21 20 MSG/MAG 2.14 GHz 19 18 17 S|21|2 1.575 GHz S|21|2 1.96 GHz 16 15 S|21|2 2.14 GHz 14 2.5 3 3.5 4 4.5 5 5.5 Icc (m A) Figure 4. Maximum Stable/Available Gain and Forward Insertion Gain vs. Icc MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 7 Electrical Specifications Minim um Noise Figure and Associated Gain vs. Frequency Rbias = 2 kohm 30 1.15 25 Gnf 1.1 20 1.05 15 1 NFm in 10 0.95 5 0.9 0.85 1000 1200 1400 1600 1800 2000 2200 Gnf, Associated Gain (dB) NFmin, Minimum Noise Figure (dB) 1.2 0 2400 f, Frequency (MHz) Figure 5. Minimum Noise Figure and Associated Gain vs. Frequency (Rbias = 2 kΩ) Minim um Noise Figure and Associated Gain vs. Frequency Rbias = 1.2 kohm 30 1.1 25 Gnf 1.08 20 1.06 15 1.04 10 1.02 NFm in 5 1 0.98 1000 1200 1400 1600 1800 2000 2200 Gnf, Associated Gain (dB) NFmin, Minimum Noise Figure (dB) 1.12 0 2400 f, Frequency (MHz) Figure 6. Minimum Noise Figure and Associated Gain vs. Frequency (Rbias = 1.2 kΩ) MC13820 Technical Data, Rev. 1.1 8 Freescale Semiconductor Electrical Specifications Input 3rd Order Intercept Point (dBm) Input 3rd Order Intercept Point vs. Icc 1960 MHz Application Ckt. 6 4 2 0 -2 -4 -6 1.5 2.5 3.5 4.5 5.5 Icc (mA) Figure 7. Input 3rd Order Intercept Point vs. Icc for the 1960 MHz Application Circuit (Rbias varied from 1.2 kΩ to 3 kΩ) Input 3rd Order Intercept Point, IIP3 (dBm) Input 3rd Order Intercept Point vs. Icc 2140 MHz Application Circuit 6 5 4 3 2 1 0 -1 -2 1 2 3 4 5 Icc (mA) Figure 8. Input 3rd Order Intercept Point vs. Icc for the 2140 MHz Application Circuit (Rbias varied from 1.2 kΩ to 3 kΩ) MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 9 Application Information 3 Application Information The MC13820 SiGe:C LNA is designed for applications in the 1000 MHz to 2.4 GHz range. It has three different modes: High Gain, Low Gain (Bypass) and Disabled. The IC is programmable through the Gain and Enable pins. The logic truth table is given in Table 5. In these application examples a balance is made between the competing RF performance characteristics of ICC, NF, gain, IP3 and return losses with unconditional stability. Conjugate matching is not used for the input or output. Instead, matching which achieves a trade-off in RF performance qualities is utilized. For a particular application or spec requirement, the matching can be changed to achieve enhanced performance of one parameter at the expense of other parameters. Application information for 1575, 1960, 2140 and 2400 MHz are shown. For each application, two current drain examples are provided. Typical RF performance is shown for two values of bias resistor R1: 1.2 kΩ and 2 kΩ, see Table 6, Table 7, Table 8, and Table 9. These two current drain states offer variation in intercept point, gain, and noise figure. Measurements are made at a bias of VCC = 2.75 V. Freq. spacing for IP3 measurements is 200 kHz. Non-linear measurements are made at Pin = -30 dB. The board loss corrections for these boards are: Input 0.16 dB, Output 0.2 dB. Gain and NF results incorporate these corrections in order to better reflect the actual performance of the device. 3.1 1575 MHz Application This application circuit was designed to provide NF < 1.2 dB, S21 gain > 18 dB, OIP3 of 18 dBm with S11 better than -10 dB and S22 better than -10 dB at 1575 MHz with unconditional stability from 100 MHz to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 6. The component values can be changed to enhance the performance of a particular parameter, but usually at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3. MC13820 Technical Data, Rev. 1.1 10 Freescale Semiconductor Application Information NC C5 .01uf C6 33 pf NC NC 12 11 10 MC13820 1575 MHz LNA 1 2 Vcc1 9 Gnd 8 Gain 7 Enable Logic C2 1 pf LNA OUT NC 3 L2 5.6 nH R2 680 C3 33 pf 4 C4 .01uf R1 2k Vcc3 Rbias 5 6 L1 5.6 nH LNA IN C1 22pF Figure 9. 1575 MHz LNA Application Schematic Table 6. Typical 1575 MHz LNA Demo Board Performance (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max Unit Frequency f - 1575.42 - MHz Power Gain High Gain Bypass G - 18 -4.7 - - 20 20.8 - - 2.0 25.5 - - 10 - - - -8.0 - - R1 = 1.2 kΩ, R2 = 620 Ω Output Third Order Intercept Point High Gain Bypass OIP3 Input Third Order Intercept Point High Gain Bypass IIP3 Out Ref P1dB High Gain Bypass P1dBout In Ref P1dB High Gain Bypass P1dBin dB dBm dBm dBm dBm MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 11 Application Information Table 6. Typical 1575 MHz LNA Demo Board Performance (continued) (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max - 18.5 -3.4 - - 1.25 4.8 - - 4.45 4.0 - mA µA Rbias R1 Value - 1.2 - kΩ Rstability R2 Value - 620 - Ω - -15.5 -8.1 - - 18.2 -4.1 - - -23.7 -4.4 - - -13.9 -6.8 - - 1575.42 - - 18 -5.0 - - 18.7 21.7 - - 0.5 27 - - 8.2 - - - -10 - - Insertion Gain High Gain Bypass G Noise Figure High Gain Bypass NF Current Drain High Gain Bypass ICC Input Return Loss High Gain Bypass S11 Gain High Gain Bypass S21 Reverse Isolation High Gain Bypass S12 Output Return Loss High Gain Bypass S22 Unit dBm dB dB dB dB dB R1= 2.0 kΩ, R2 = 680 Ω Frequency f Power Gain High Gain Bypass G Output Third Order Intercept Point High Gain Bypass OIP3 Input Third Order Intercept Point High Gain Bypass IIP3 Out Ref P1dB High Gain Bypass P1dBout In Ref P1dB High Gain Bypass P1dBin MHz dB dBm dBm dBm dBm MC13820 Technical Data, Rev. 1.1 12 Freescale Semiconductor Application Information Table 6. Typical 1575 MHz LNA Demo Board Performance (continued) (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max - 18.1 -3.6 - - 1.25 4.8 - - 2.8 4.0 - mA µA Rbias R1 Value - 2.0 - kΩ Rstability R2 Value - 680 - Ω - -13.5 -9.0 - - 17.9 -4.1 - - -22.9 -4.3 - - -10.8 -7.2 - Insertion Gain High Gain Bypass G Noise Figure High Gain Bypass NF Current Drain High Gain Bypass ICC Input Return Loss High Gain Bypass S11 Gain High Gain Bypass S21 Reverse Isolation High Gain Bypass S12 Output Return Loss High Gain Bypass S22 Unit dBm dB dB dB dB dB MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 13 Application Information 3.2 1960 MHz Application This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 17 dBm with S11 better than -10 dB and S22 better than -10 dB at 1960 MHz with unconditional stability from 100 MHz to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 7. The component values can be changed to enhance the performance of a particular parameter, but usually at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3. NC C5 .01uf NC NC 12 11 10 MC13820 1960 MHz LNA 1 C6 33 pf 2 Vcc1 9 Gnd 8 Gain 7 Enable Logic C2 0.9pf LNA OUT NC 3 R2 3.3 k L2 2.7 nH C3 33 pf 4 C4 .01uf R1 2k Vcc3 Rbias 5 6 L1 4.3 nH LNA IN C1 33pF Figure 10. 1960 MHz LNA Application Schematic Table 7. Typical 1960 MHz LNA Demo Board Performance (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max Unit Frequency f - 1960 - MHz Power Gain High Gain Bypass G - 16 -4.5 - - 22 20.5 - - 5.5 25 - R1 = 1.2 kΩ, R2 = 3.3 kΩ Output Third Order Intercept Point High Gain Bypass OIP3 Input Third Order Intercept Point High Gain Bypass IIP3 dB dBm dBm MC13820 Technical Data, Rev. 1.1 14 Freescale Semiconductor Application Information Table 7. Typical 1960 MHz LNA Demo Board Performance (continued) (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max - 10.5 - - - -6.0 - - - 16.8 -3.7 - - 1.26 2.5 - - 4.45 10 - mA µA Rbias R1 Value - 1.2 - kΩ Rstability R2 Value - 3.3 - kΩ - -9.7 -8.7 - - 16.6 -3.8 - - -21.7 -4.2 - - -14.6 -6.3 - - 1960 - - 16.4 -4.0 - - 17.4 21 - - 1.0 25 - Out Ref P1dB High Gain Bypass P1dBout In Ref P1dB High Gain Bypass P1dBin Insertion Gain High Gain Bypass G Noise Figure High Gain Bypass NF Current Drain High Gain Bypass ICC Input Return Loss High Gain Bypass S11 Gain High Gain Bypass S21 Reverse Isolation High Gain Bypass S12 Output Return Loss High Gain Bypass S22 Unit dBm dBm dBm dB dB dB dB dB R1 = 2.0 kΩ, R2 = 3.3 kΩ Frequency f Power Gain High Gain Bypass G Output Third Order Intercept Point High Gain Bypass OIP3 Input Third Order Intercept Point High Gain Bypass IIP3 MHz dB dBm dBm MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 15 Application Information Table 7. Typical 1960 MHz LNA Demo Board Performance (continued) (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max - 10.4 - - - -6.0 - - - 16.5 -3.7 - - 1.25 4.7 - - 2.8 4.0 - mA µA Rbias R1 Value - 2.0 - kΩ Rstability R2 Value - 3.3 - kΩ - -9.2 -9.8 - - 16.6 -3.9 - - -21.1 -4.0 - - -25 -7.8 - Out Ref P1dB High Gain Bypass P1dBout In Ref P1dB High Gain Bypass P1dBin Insertion Gain High Gain Bypass G Noise Figure High Gain Bypass NF Current Drain High Gain Bypass ICC Input Return Loss High Gain Bypass S11 Gain High Gain Bypass S21 Reverse Isolation High Gain Bypass S12 Output Return Loss High Gain Bypass S22 Unit dBm dBm dBm dB dB dB dB dB MC13820 Technical Data, Rev. 1.1 16 Freescale Semiconductor Application Information 3.3 2140 MHz Application This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 8. The component values can be changed to enhance the performance of a particular parameter, but usually at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3. NC C5 .01uf NC NC 12 11 10 MC13820 2140 MHz LNA 1 C6 33 pf 2 Vcc1 9 Gnd 8 Gain 7 Enable Logic C2 0.9pf LNA OUT NC 3 R2 3.3 k L2 2.7 nH C3 33 pf 4 C4 .01uf R1 2k Vcc3 Rbias 5 6 L1 4.3 nH LNA IN C1 33pF Figure 11. 2140 MHz LNA Application Schematic Table 8. Typical 2140 MHz LNA Demo Board Performance (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max Unit Frequency f - 2140 - MHz Power Gain High Gain Bypass G - 15.7 -3.4 - - 20.7 16.4 - - 5.0 20 - R1 = 1.2 kΩ, R2 = 3.3 kΩ Output Third Order Intercept Point High Gain Bypass OIP3 Input Third Order Intercept Point High Gain Bypass IIP3 dB dBm dBm MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 17 Application Information Table 8. Typical 2140 MHz LNA Demo Board Performance (continued) (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max - 10.7 - - - -5.0 - - - 14.8 -3.4 - - 1.49 3.4 - - 4.45 10 - mA µA Rbias R1 Value - 1.2 - kΩ Rstability R2 Value - 3.3 - kΩ - -8.5 -8.9 - - 16.5 -4.1 - - -22.2 -4.5 - - -12.5 -6.1 - - 2140 - - 15.7 -3.2 - - 19.7 21.3 - - 3.5 24.5 - Out Ref P1dB High Gain Bypass P1dBout In Ref P1dB High Gain Bypass P1dBin Insertion Gain High Gain Bypass G Noise Figure High Gain Bypass NF Current Drain High Gain Bypass ICC Input Return Loss High Gain Bypass S11 Gain High Gain Bypass S21 Reverse Isolation High Gain Bypass S12 Output Return Loss High Gain Bypass S22 Unit dBm dBm dBm dB dB dB dB dB R1 = 2.0 kΩ, R2 = 3.3 kΩ Frequency f Power Gain High Gain Bypass G Output Third Order Intercept Point High Gain Bypass OIP3 Input Third Order Intercept Point High Gain Bypass IIP3 MHz dB dBm dBm MC13820 Technical Data, Rev. 1.1 18 Freescale Semiconductor Application Information Table 8. Typical 2140 MHz LNA Demo Board Performance (continued) (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max - 10.7 - - - -5.0 - - - 14.8 -3.5 - - 1.3 3.2 - - 2.8 10 - mA µA Rbias R1 Value - 2.0 - kΩ Rstability R2 Value - 3.3 - kΩ - -13.7 -17.1 - - 15.5 -3.0 - - -20.9 -3.3 - - -12.1 -14.6 - Out Ref P1dB High Gain Bypass P1dBout In Ref P1dB High Gain Bypass P1dBin Insertion Gain High Gain Bypass G Noise Figure High Gain Bypass NF Current Drain High Gain Bypass ICC Input Return Loss High Gain Bypass S11 Gain High Gain Bypass S21 Reverse Isolation High Gain Bypass S12 Output Return Loss High Gain Bypass S22 Unit dBm dBm dBm dB dB dB dB dB MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 19 Application Information 3.4 2400 MHz Application This application circuit was designed to provide NF < 1.3 dB, S21 gain > 16 dB, OIP3 of 18 dBm with S11 better than -10 dB and S22 better than -10 dB at 2140 MHz with unconditional stability from 100 MHz to 10 GHz. Typical performance that can be expected from this circuit at 2.75 V VCC is listed in Table 9. The component values can be changed to enhance the performance of a particular parameter, but usually at the expense of another. Two variations of the circuit are realized for different requirements for IP3 and ICC. Values of external resistors R1 and R2 are varied to adjust ICC and IP3. NC C5 .01uf NC NC 12 11 10 MC13820 2400 MHz LNA 1 C6 33 pf 2 Vcc1 9 Gnd 8 Gain 7 Enable Logic C2 0.6pf LNA OUT NC 3 R2 3.3 k L2 2.4 nH C3 33 pf 4 C4 .01uf R1 2k Vcc3 Rbias 5 6 L1 2.7 nH LNA IN C1 33pF Figure 12. 2400 MHz LNA Application Schematic Table 9. Typical 2400 MHz LNA Demo Board Performance (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max Unit Frequency f - 2400 - MHz Power Gain High Gain Bypass G - 14 -3.8 - - 21 19 - - 7.0 22 - R1 = 1.2 kΩ, R2 = 3.3 kΩ Output Third Order Intercept Point High Gain Bypass OIP3 Input Third Order Intercept Point High Gain Bypass IIP3 dB dBm dBm MC13820 Technical Data, Rev. 1.1 20 Freescale Semiconductor Application Information Table 9. Typical 2400 MHz LNA Demo Board Performance (continued) (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max - 10.7 - - - -4.0 - - - 14 -3.8 - - 1.55 3.8 - - 4.45 10 - mA µA Rbias R1 Value - 1.2 - kΩ Rstability R2 Value - 3.3 - kΩ - -8.5 -8.9 - - 14.5 -4.1 - - -20.2 -4.0 - - -11 -7.0 - - 2400 - - 14 -3.6 - - 18.5 20 - - 4.0 24 - Out Ref P1dB High Gain Bypass P1dBout In Ref P1dB High Gain Bypass P1dBin Insertion Gain High Gain Bypass G Noise Figure High Gain Bypass NF Current Drain High Gain Bypass ICC Input Return Loss High Gain Bypass S11 Gain High Gain Bypass S21 Reverse Isolation High Gain Bypass S12 Output Return Loss High Gain Bypass S22 Unit dBm dBm dBm dB dB dB dB dB R1 = 2.0 kΩ, R2 = 3.3 kΩ Frequency f Power Gain High Gain Bypass G Output Third Order Intercept Point High Gain Bypass OIP3 Input Third Order Intercept Point High Gain Bypass IIP3 MHz dB dBm dBm MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 21 Application Information Table 9. Typical 2400 MHz LNA Demo Board Performance (continued) (Resistor values of R1 and R2 are changed for different ICC and IP3 requirements.) Characteristic Symbol Min Typ Max - 10 - - - -4.0 - - - 14 -4.0 - - 1.49 4.2 - - 2.8 10 - mA µA Rbias R1 Value - 2.0 - kΩ Rstability R2 Value - 3.3 - kΩ - dB - dB - dB - dB Out Ref P1dB High Gain Bypass P1dBout In Ref P1dB High Gain Bypass P1dBin Insertion Gain High Gain Bypass G Noise Figure High Gain Bypass NF Current Drain High Gain Bypass ICC Input Return Loss High Gain Bypass S11 Gain High Gain Bypass S21 Reverse Isolation High Gain Bypass S12 Output Return Loss High Gain Bypass S22 Unit dBm dBm dBm dB - -10 -9.7 14 -3.6 -20 -3.8 -10 -9.1 MC13820 Technical Data, Rev. 1.1 22 Freescale Semiconductor Printed Circuit Board 4 Printed Circuit Board C2 Q1 L2 R2 C3 C4 R1 L1 C1 MBC1 3720/21 V2R1 NOT E: COMPON EN TS C5 AND C6 ARE LOCATED ON THE BACK OF THE BOARD Figure 13. Front Side C5 C6 Figure 14. Back Side MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 23 Printed Circuit Board Table 10. Bill of Materials Component Value Case Manufacturer Comments C1 22 pF 402 Murata Input match C2 1.0 pF 402 Taiyo Yuden Output match C3 33 pF 402 Murata RF bypass C4 .01 µF 402 Murata Low freq bypass C5 .01 µF 402 Murata Low freq bypass C6 33 pF 402 Murata RF bypass L2 5.6 nH 1005 CoilCraft Output match L1 5.6 nH 1005 CoilCraft Input match R1 1.2 or 2 kΩ 402 KOA Bias for 4.45 or 2.8 mA R2 680 Ω 402 KOA Stability Q1 MC13820 QFN-12 Freescale C1 33 pF 402 Murata Input match C2 0.9 pF 402 Taiyo Yuden Output match C3 33 pF 402 Murata RF bypass C4 .01 µF 402 Murata Low freq bypass C5 .01 µF 402 Murata Low freq bypass C6 33 pF 402 Murata RF bypass L1 4.3 nH 1005 CoilCraft Input match L2 2.7 nH 1005 Coilcraft Output match R1 1.2 or 2 kΩ 402 KOA Bias for 4.45 or 2.8 mA R2 3.3 kΩ 402 KOA Stability Q1 MC13820 QFN-12 Freescale C1 33 pF 402 Murata Input match C2 0.9 pF 402 Taiyo Yuden Output match C3 33 pF 402 Murata RF bypass C4 .01 µF 402 Murata Low freq bypass C5 .01 µF 402 Murata Low freq bypass C6 33 pF 402 Murata RF bypass L1 4.3 nH 1005 CoilCraft Input match L2 2.7 nH 1005 CoilCraft Output match 1575 MHz 1960 MHz 2140 MHz MC13820 Technical Data, Rev. 1.1 24 Freescale Semiconductor Printed Circuit Board Table 10. Bill of Materials (continued) Component Value Case Manufacturer Comments R2 3.3 kΩ 402 KOA Stability R1 1.2 or 2 kΩ 402 KOA Bias for 4.45 or 2.8 mA Q1 MC13820 QFN-12 Freescale C1 33 pF 402 Murata Input match C2 0.6 pF 402 Taiyo Yuden Output match C3 33 pF 402 Murata RF bypass C4 .01 µF 402 Murata Low freq bypass C5 .01 µF 402 Murata Low freq bypass C6 33 pF 402 Murata RF bypass L1 2.7 nH 1005 CoilCraft Input match L2 2.4 nH 1005 CoilCraft Output match R2 1.2 or 2 kΩ 402 KOA Bias for 4.45 or 2.8 mA R1 3.3 kΩ 402 KOA Stability Q1 MC13820 QFN-12 Freescale 2400 MHz MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 25 Scattering Parameters 5 Scattering Parameters Table 11. Active Mode Scattering Parameters (VCC1 and VCC3 = 2.75 V, Band grounded, Gain = 2.75 V, Enable = 2.75 V, Rbias resistor R1 = 2 kΩ), ICC = 2.6 mA f GHz) S21 S11 S12 S22 |S11| ∠φ |S11| ∠φ |S11| ∠φ |S11| ∠φ 0.7 0.852 -29.22 7.029 142.03 0.021 75.16 0.956 -14.42 0.8 0.836 -32.9 7.279 137.43 0.024 73.13 0.946 -15.76 0.9 0.803 -36.02 7.034 133.48 0.027 70.95 0.966 -19.49 1 0.814 -42.84 6.856 127 0.029 66.71 0.887 -17.77 1.1 0.782 -42.6 6.687 125.21 0.031 68.53 0.924 -22.03 1.2 0.772 -45.55 6.29 122.03 0.034 65.83 0.898 -23.58 1.3 0.752 -47.28 6.242 116.95 0.036 65.66 0.897 -25.56 1.4 0.718 -50.24 6.082 114.12 0.039 64.76 0.912 -26.44 1.5 0.672 -52.29 5.696 112.14 0.04 61.29 0.943 -30.51 1.6 0.688 -49.98 5.662 107.49 0.043 61.9 0.882 -35.18 1.7 0.695 -53.95 5.499 104.8 0.044 60.95 0.865 -35.67 1.8 0.686 -54.86 5.348 101.62 0.047 60.42 0.866 -36.55 1.9 0.653 -57.19 5.334 97.81 0.05 59.47 0.892 -41.25 2 0.661 -57.81 5.098 95.37 0.052 60.14 0.863 -42.78 2.1 0.646 -60.4 5.035 90.65 0.058 56 0.844 -46.94 2.2 0.639 -62.48 4.766 86.29 0.058 52.65 0.818 -49.01 2.3 0.628 -61.9 4.575 86.75 0.059 51.95 0.8 -50.61 2.4 0.608 -63.13 4.529 82.12 0.06 52.38 0.78 -51.67 2.5 0.61 -63.96 4.366 79.31 0.063 53.62 0.779 -52.93 2.6 0.609 -65.96 4.251 77.33 0.067 51.2 0.777 -54.38 2.7 0.637 -69.48 4.307 75.4 0.072 50.86 0.811 -57.38 2.8 0.57 -74.63 4.168 68.94 0.073 46.36 0.756 -63.02 2.9 0.536 -75.03 3.933 65.73 0.075 42.72 0.716 -62.94 3 0.515 -75.6 3.819 62.83 0.074 42.14 0.697 -64.16 3.1 0.506 -75.28 3.665 61.56 0.074 39.24 0.683 -63.26 3.2 0.489 -73.7 3.572 60.5 0.07 39.17 0.702 -63.69 3.3 0.483 -74.54 3.523 58.09 0.07 43.49 0.716 -66.71 3.4 0.487 -76.91 3.495 55.25 0.075 46.63 0.714 -70.44 3.5 0.488 -78.25 3.484 51.93 0.082 45.9 0.699 -74.6 MC13820 Technical Data, Rev. 1.1 26 Freescale Semiconductor Scattering Parameters Table 12. Bypass Mode Scattering Parameters ((VCC1 and VCC3 = 2.75V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1= 2 kΩ), ICC = 3.0 µA) f (GHz) S11 S21 S12 S22 |S11| ∠φ |S11| ∠φ |S11| ∠φ |S11| ∠φ 0.7 0.549 -51.13 0.578 17.83 0.583 18.83 0.578 -41.21 0.8 0.511 -53.94 0.596 13.17 0.6 14.15 0.542 -42.25 0.9 0.47 -55.73 0.608 8.45 0.614 10.08 0.524 -45.13 1 0.458 -59.65 0.615 3.3 0.617 5.12 0.455 -43.82 1.1 0.434 -58.46 0.624 1.11 0.628 2.52 0.453 -46.74 1.2 0.421 -59.33 0.629 -2.37 0.635 -0.96 0.42 -48.02 1.3 0.404 -59.6 0.634 -5.19 0.639 -3.8 0.407 -48.56 1.4 0.384 -61.06 0.633 -8.02 0.639 -6.66 0.394 -47.62 1.5 0.36 -62.48 0.638 -10.97 0.641 -9.5 0.388 -49.7 1.6 0.362 -59.49 0.638 -13.09 0.643 -11.89 0.374 -53.61 1.7 0.367 -60.21 0.639 -15.43 0.643 -14.26 0.353 -53.66 1.8 0.363 -60.18 0.64 -17.77 0.645 -16.58 0.335 -53.3 1.9 0.35 -63.26 0.645 -20.27 0.649 -19.08 0.348 -53.86 2 0.355 -63.18 0.639 -22.63 0.643 -21.39 0.327 -54.83 2.1 0.335 -66.36 0.64 -24.42 0.643 -23.2 0.342 -57.82 2.2 0.332 -65.87 0.64 -26.93 0.645 -25.56 0.324 -60.95 2.3 0.322 -63.97 0.64 -28.95 0.644 -27.79 0.309 -63.15 2.4 0.32 -63.46 0.639 -31.11 0.642 -30.01 0.294 -64.43 2.5 0.319 -63.28 0.632 -33.88 0.638 -32.07 0.279 -64.25 2.6 0.323 -63.96 0.627 -35.14 0.633 -33.64 0.274 -62.49 2.7 0.354 -65.66 0.64 -36.78 0.645 -35.11 0.297 -62.47 2.8 0.317 -73.59 0.637 -40.56 0.643 -38.92 0.282 -72.82 2.9 0.296 -74.61 0.622 -42.77 0.629 -41.1 0.245 -73.08 3 0.284 -74.6 0.616 -44.14 0.621 -42.65 0.23 -70.36 3.1 0.283 -72.89 0.616 -45.7 0.619 -43.94 0.236 -67.03 3.2 0.274 -72.04 0.618 -47.38 0.622 -45.84 0.245 -68.8 3.3 0.269 -74.74 0.618 -50.21 0.623 -48.62 0.238 -75.51 3.4 0.265 -77.34 0.609 -52.62 0.615 -51.03 0.212 -77.5 3.5 0.261 -76.71 0.603 -54.36 0.607 -52.96 0.194 -77.94 MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 27 Scattering Parameters Table 13. Active Mode Scattering Parameters (VCC1 and VCC3 = 2.75 V, Band grounded, Gain and Enable = 2.75 V, Rbias resistor R1 = 1.2 kΩ, ICC = 4.8 mA) f (GHz) S11 S21 S12 S22 |S11| ∠φ |S11| ∠φ |S11| ∠φ |S11| ∠φ 0.7 0.784 -32.04 10.275 132.74 0.021 72.91 0.92 -15.77 0.8 0.765 -35.9 10.162 127.59 0.022 71.83 0.907 -16.82 0.9 0.721 -39 9.646 122.89 0.025 68.97 0.923 -20.31 1 0.724 -45.16 9.184 116.28 0.027 67.34 0.842 -18.21 1.1 0.692 -44.87 8.773 114.36 0.029 67.52 0.877 -22.39 1.2 0.678 -47.17 8.23 110.64 0.033 67.56 0.846 -23.69 1.3 0.662 -48.64 7.98 106.21 0.034 66.62 0.845 -25.47 1.4 0.626 -51.75 7.638 103.36 0.037 64.27 0.858 -25.98 1.5 0.576 -53.11 7.185 100.91 0.039 63.47 0.893 -29.67 1.6 0.594 -49.59 6.972 96.71 0.041 62.78 0.835 -34.46 1.7 0.599 -52.85 6.691 93.81 0.042 62.14 0.816 -34.49 1.8 0.594 -54.14 6.444 90.92 0.044 62.34 0.817 -35.3 1.9 0.56 -56.18 6.34 87.3 0.049 60.88 0.843 -39.86 2 0.568 -57.13 6.029 85.12 0.05 60.42 0.817 -41.18 2.1 0.548 -58.62 5.885 80.96 0.054 57.9 0.798 -45.47 2.2 0.546 -59.79 5.568 76.96 0.056 56.61 0.774 -46.98 2.3 0.543 -59.25 5.318 76.8 0.057 54.83 0.761 -48.63 2.4 0.532 -59.9 5.189 72.95 0.059 54.79 0.742 -49.56 2.5 0.527 -61.63 4.979 70.13 0.062 53.59 0.741 -50.7 2.6 0.529 -62.78 4.816 68.35 0.064 53.44 0.743 -52 2.7 0.551 -67.21 4.839 66.22 0.072 52.3 0.768 -55.57 2.8 0.485 -70.76 4.649 60.62 0.072 47.22 0.715 -60.12 2.9 0.454 -71.28 4.382 57.65 0.074 44.14 0.68 -60.09 3 0.434 -70.94 4.207 55.39 0.072 42.21 0.666 -60.36 3.1 0.433 -67.82 4.048 54.44 0.068 41.81 0.669 -60.12 3.2 0.436 -66.18 3.936 52.8 0.069 43.96 0.674 -61.04 3.3 0.437 -68.3 3.847 50.72 0.072 47.68 0.684 -63.24 3.4 0.437 -72.51 3.81 48.36 0.078 46.81 0.687 -66.49 3.5 0.433 -73.15 3.767 45.48 0.082 45.71 0.676 -70.55 MC13820 Technical Data, Rev. 1.1 28 Freescale Semiconductor Scattering Parameters Table 14. Bypass Mode Scattering Parameters (VCC1 and VCC3 = 2.75 V, Band and Gain grounded, Enable = 2.75 V, Rbias resistor R1 = 1.2 kΩ, ICC = 3 µA) f (GHz) S11 S21 S12 S22 |S11| ∠φ |S11| ∠φ |S11| ∠φ |S11| ∠φ 0.7 0.556 -44.11 0.573 20.27 0.573 20.39 0.595 -42.94 0.8 0.514 -46.8 0.591 15.11 0.591 15.3 0.549 -43.78 0.9 0.475 -49.46 0.6 10.38 0.599 10.66 0.511 -43.02 1 0.459 -50.05 0.618 6.77 0.617 6.98 0.479 -46.66 1.1 0.427 -50.66 0.623 3.34 0.621 3.51 0.462 -47.17 1.2 0.412 -51.99 0.633 -0.34 0.632 -0.19 0.43 -49.25 1.3 0.391 -52.85 0.635 -3.09 0.634 -2.98 0.421 -49.35 1.4 0.379 -53.91 0.637 -6.45 0.636 -6.18 0.395 -50.53 1.5 0.368 -53.94 0.638 -8.92 0.638 -8.66 0.384 -51.37 1.6 0.358 -54.86 0.64 -11.49 0.639 -11.33 0.374 -52.64 1.7 0.352 -55.36 0.641 -14.09 0.64 -13.92 0.358 -53.9 1.8 0.346 -55.58 0.641 -16.37 0.641 -16.17 0.345 -54.87 1.9 0.341 -55.61 0.641 -18.68 0.641 -18.47 0.334 -56.07 2 0.334 -56.07 0.638 -20.97 0.639 -20.85 0.321 -56.45 2.1 0.329 -56.92 0.635 -23.12 0.633 -22.91 0.312 -56.2 2.2 0.319 -57.96 0.636 -24.75 0.636 -24.45 0.314 -57.47 2.3 0.308 -57.61 0.64 -26.81 0.64 -26.59 0.306 -59.76 2.4 0.299 -57.89 0.641 -29.13 0.64 -28.92 0.295 -61.28 2.5 0.293 -59.25 0.64 -31.4 0.642 -31.04 0.291 -62.5 2.6 0.285 -60.49 0.636 -33.55 0.636 -33.11 0.277 -62.84 2.7 0.279 -62.48 0.636 -35.59 0.635 -35.51 0.272 -65.72 2.8 0.274 -64.02 0.634 -37.84 0.633 -37.69 0.258 -67.26 2.9 0.267 -66.58 0.629 -39.74 0.63 -39.66 0.247 -67.95 3 0.27 -68.28 0.623 -42.19 0.623 -42.06 0.232 -68.55 3.1 0.264 -70.53 0.618 -43.48 0.616 -43.19 0.241 -64.77 3.2 0.261 -72.44 0.617 -45.42 0.616 -45.19 0.241 -69.24 3.3 0.26 -73.31 0.616 -47.61 0.615 -47.35 0.227 -74.2 3.4 0.26 -73.49 0.613 -49.49 0.613 -49.26 0.209 -76.39 3.5 0.265 -73.26 0.61 -52.15 0.61 -51.84 0.179 -78.56 MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 29 Scattering Parameters Table 15. Noise Parameters (VCC = 2.7 V, Enable = 2.75 V, Rbias = 1.2 kΩ, ICC = 4.8 mA) f (GHz) NFmin (dB) 1 Gamma Opt Rn (Ω) rn (Ω) GNF (dB) K Mag Ang 1.11 0.27 25.3 14 0.28 26.21 0.63 1.575 0.99 0.29 40.8 13 0.26 22.63 0.74 1.9 0.96 0.30 46.9 12.5 0.25 20.83 0.70 2.14 0.96 0.30 50.1 12.5 0.25 19.8 0.78 2.4 0.97 0.30 54.0 12 0.24 18.3 0.89 Table 16. Noise Parameters (VCC = 2.7 V, Enable = 2.75 V, Rbias = 2 kΩ, ICC = 2.8 mA) f (GHz) NFmin (dB) 1 Gamma Opt Rn (Ω) rn (Ω) GNF (dB) K Mag Ang 1.16 0.23 27.6 15.5 0.31 26.09 0.48 1.575 1.02 0.35 39.0 15 0.3 22.57 0.56 1.9 0.97 0.37 46.2 14 0.28 20.81 0.53 2.14 0.96 0.37 49.7 14 0.28 19.79 0.61 2.4 0.95 0.37 54.1 13.5 0.27 18.3 0.77 MC13820 Technical Data, Rev. 1.1 30 Freescale Semiconductor Scattering Parameters (shaded regions are potentially unstable) f(GHz) NFmin Gamma-Opt Rn (Ω) K 1.575 1.02 0.30/_38.2 13.5 0.74 Figure 15. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 1.2 kΩ (shaded regions are potentially unstable) f(GHz) NFmin Gamma-Opt Rn (Ω) K 1.575 0.97 0.34/_39.1 17.0 0.56 Figure 16. Constant Noise Figure and Gain Circles. 1575 MHz, Rbias = 2 kΩ MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 31 Scattering Parameters (shaded regions are potentially unstable) f(GHz) NFmin Gamma-Opt Rn (Ω) K 1.9 0.96 0.30/_46.9 12.5 0.68 Figure 17. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias =1.2 kΩ (shaded regions are potentially unstable) f(GHz) NFmin Gamma-Opt Rn (Ω) K 1.9 0.97 0.37/_46.2 14.0 0.50 Figure 18. Constant Noise Figure and Gain Circles. 1900 MHz, Rbias = 2 kΩ MC13820 Technical Data, Rev. 1.1 32 Freescale Semiconductor Scattering Parameters (shaded regions are potentially unstable) f(GHz) NFmin Gamma-Opt Rn (Ω) K 2.1 0.96 0.30/_50.1 12.5 0.76 Figure 19. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 kΩ (shaded regions are potentially unstable) f(GHz) NFmin Gamma-Opt Rn (Ω) K 2.1 0.96 0.37/_49.7 14.0 0.58 Figure 20. Constant Noise Figure and Gain Circles. 2140 MHz, Rbias =1.2 kΩ MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 33 Scattering Parameters (shaded regions are potentially unstable) f(GHz) NFmin Gamma-Opt Rn (Ω) K 2.3 0.96 0.30/_52.8 12.0 0.85 Figure 21. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias =1.2 kΩ (shaded regions are potentially unstable) f(GHz) NFmin Gamma-Opt Rn (Ω) K 2.3 0.95 0.38/_53 13.5 0.70 Figure 22. Constant Noise Figure and Gain Circles. 2400 MHz, Rbias = 2 kΩ MC13820 Technical Data, Rev. 1.1 34 Freescale Semiconductor Packaging 6 Packaging LASER MARK FOR PIN 1 IDENTIFICATION IN THIS AREA 3 A M 2X 0.1 C G 0.1 C 1.0 1.00 0.8 0.75 3 (0.5) C SEATING PLANE DETAIL G M 0.1 C B 5 (0.24) 0.05 0.00 2X 0.05 C VIEW ROTATED 90° CLOCKWISE 0.1 C A B 1.25 0.95 0.1 M C A B 0.05 M C 12X 0.3 0.18 12X 10 DETAIL M PIN 1 IDENTIFIER 12 EXPOSED DIE ATTACH PAD 8X (1.177) 4X 9 1 7 3 6 0.75 0.5 0.1 C A B 12X 0.065 0.015 3X (R0.09) 4X (0.18) DETAIL N N 4 8X 1.25 0.95 (45°) CORNER CONFIGURATION 4 0.5 VIEW M-M DETAIL S NOTES: 1. DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. THE COMPLETE JEDEC DESIGNATOR FOR THIS PACKAGE IS: HF-PQFP-N. 4. CORNER CHAMFER MAY NOT BE PRESENT. DIMENSIONS OF OPTIONAL FEATURES ARE FOR REFERENCE ONLY. 5. COPLANARITY APPLIES TO LEADS, CORNER LEADS, AND DIE ATTACH PAD. (90°) 4X 8X (0.25) 2X 0.39 0.31 (0.777) 2X DETAIL M DETAIL S PIN 1 BACKSIDE IDENTIFIER PIN 1 BACKSIDE IDENTIFIER 0.1 0.0 Figure 23. Outline Dimensions for QFN-12 (Case Outline 1345-01, Issue A) MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 35 Product Documentation 7 Product Documentation This data sheet is labeled as a particular type: Product Preview, Advance Information, or Technical Data. Definitions of these types are available at: http://www.freescale.com. Table 17 summarizes revisions made to this document since Rev. 1.0 was released. Table 17. Revision History Location Revision Section 1.1, “Features”, on page 1 Updated text. Table 1 Maximum Ratings Updated Thermal Resistance, Junction to Case and added Thermal Resistance, Junction to Ambient, 4 layer board. Table 2 Recommended Operating Conditions Updated Logic Voltage. Table 5 Truth Table Added notes. Table 6 Typical 1575 MHz LNA Demo Board Performance Updated Current Drain Typ numbers. Table 7 Typical 1960 MHz LNA Demo Board Performance Updated Current Drain. Table 8 Typical 2140 MHz LNA Demo Board Performance Updated to R1 = 2.0 kΩ, R2 = 3.3 kΩ. Table 9 Typical 2400 MHz LNA Demo Board Performance Updated to R1 = 2.0 kΩ, R2 = 3.3 kΩ. Table 10 Bill of Materials Updated 1575 MHz R1, 1960 MHz R1, 2140 MHz R1, and 2400 MHz R2. Figure 13 Front Side of Printed Circuit Board Updated. MC13820 Technical Data, Rev. 1.1 36 Freescale Semiconductor NOTES MC13820 Technical Data, Rev. 1.1 Freescale Semiconductor 37 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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