MOTOROLA MC74HC354

SEMICONDUCTOR TECHNICAL DATA
"! ! !
"!# ! ! ! !! "!"!
1
High–Performance Silicon–Gate CMOS
The MC54/74HC354 is identical in pinout to the LS354. The device
inputs are compatible with Standard CMOS outputs; with pullup resistors,
they are compatible with LSTTL outputs.
The HC354 selects one of eight latched binary Data Inputs, as determined by the Address Inputs. The information at the Data Inputs is stored
in the transparent 8–bit Data Latch when the Data–Latch Enable pin is
held high. The Address information may be stored in the transparent
Address Latch, which is enabled by the active–high Address–Enable pin.
The device outputs are placed in high–impedance states when Output
Enable 1 is high, Output Enable 2 is high, or Output Enable 3 is low.
The HC354 has a clocked Data Latch that is not transparent.
•
•
•
•
•
•
•
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
20
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
20
1
20
1
DW SUFFIX
SOIC PACKAGE
CASE 751D–04
ORDERING INFORMATION
MC54HCXXXJ
MC74HCXXXN
MC74HCXXXDW
Output Drive Capability: 15 LSTTL Loads
Ceramic
Plastic
SOIC
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 2 to 6V
Pinout: 20–Lead Package (Top View)
Low Input Current: 1µA
High Noise Immunity Characteristic of CMOS Devices
In Compliance With the JEDEC Standard No. 7A Requirements
D7 1
20 VCC
Chip Complexity: 326 FETs or 81.5 Equivalent Gates
D6 2
19 Y
D5 3
18 Y
D4 4
17 OE3
D3 5
16 OE2
D2 6
15 OE1
D1 7
14 A0
D0 8
13 A1
Data–Latch 9
Enable
12 A2
LOGIC DIAGRAM
DATA
INPUTS
8
D0
7
D1
6
D2
5
D3
4
D4
3
D5
2
D6
1
D7
8–BIT
DATA
LATCH
(TRANS–
PARENT)
8–BIT
MULTI–
PLEXER
3–STATE
OUTPUT
CONTROL
19
18
Y
Y
3–STATE
DATA
OUTPUTS
GND 10
DATA–LATCH 9
ENABLE
A0
ADDRESS
INPUTS
14
13
A1
12
A2
ADDRESS–LATCH 11
ENABLE
OE1
OUTPUT
ENABLES
OE2
OE3
ADDRESS
LATCH
(TRANS–
PARENT)
PIN 20 = VCC
PIN 10 = GND
15
16
17
10/95
 Motorola, Inc. 1995
1
REV 7
11
Address–Latch
Enable
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MC54/74HC354
MAXIMUM RATINGS*
Symbol
VCC
Parameter
DC Supply Voltage (Referenced to GND)
Value
Unit
– 0.5 to + 7.0
V
V
Vin
DC Input Voltage (Referenced to GND)
– 1.5 to VCC + 1.5
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air, Plastic or Ceramic DIP†
SOIC Package†
750
500
mW
Tstg
Storage Temperature Range
– 65 to + 150
_C
Iin
TL
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high–impedance circuit. For proper operation, Vin and
Vout should be constrained to the
range GND (Vin or Vout) VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
v
v
_C
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP or SOIC Package
Ceramic DIP
260
300
* Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
Ceramic DIP: – 10 mW/_C from 100_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
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RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Vin, Vout
Parameter
DC Supply Voltage (Referenced to GND)
DC Input Voltage, Output Voltage (Referenced to GND)
TA
Operating Temperature Range, All Package Types
tr, tf
Input Rise/Fall Time
(Figure 1)
VCC = 2.0 V
VCC = 4.5 V
VCC = 6.0 V
Min
Max
Unit
2.0
6.0
V
0
VCC
V
– 55
+ 125
_C
0
0
0
1000
500
400
ns
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
Guaranteed Limit
VCC
V
–55 to 25°C
≤85°C
≤125°C
Unit
VIH
Minimum High–Level Input Voltage
Vout = 0.1V or VCC –0.1V
|Iout| ≤ 20µA
2.0
4.5
6.0
1.50
3.15
4.20
1.50
3.15
4.20
1.50
3.15
4.20
V
VIL
Maximum Low–Level Input Voltage
Vout = 0.1V or VCC – 0.1V
|Iout| ≤ 20µA
2.0
4.5
6.0
0.3
0.9
1.2
0.3
0.9
1.2
0.3
0.9
1.2
V
Minimum High–Level Output
Voltage
Vin = VIH or VIL
|Iout| ≤ 20µA
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
4.5
6.0
3.98
5.48
3.84
5.34
3.70
5.20
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
6.0
±0.1
±1.0
±1.0
VOH
|Iout| ≤ 6.0mA
|Iout| ≤ 7.8mA
Vin =VIH or VIL
VOL
Maximum Low–Level Output
Voltage
Vin = VIH or VIL
|Iout| ≤ 20µA
|Iout| ≤ 6.0mA
|Iout| ≤ 7.8mA
Vin = VIH or VIL
Iin
MOTOROLA
Maximum Input Leakage Current
Vin = VCC or GND
2
V
µA
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC354
DC CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Condition
Guaranteed Limit
VCC
V
–55 to 25°C
≤85°C
≤125°C
Unit
IOZ
Maximum Three–State Leakage
Current
Output in High–Impedance State
Vin = VIL or VIH
Vout = VCC or GND
6.0
±0.5
±5.0
±10.0
µA
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0µA
6.0
8
80
160
µA
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
AC CHARACTERISTICS (CL = 50 pF, Input tr = tf = 6 ns)
Symbol
Parameter
Guaranteed Limit
VCC
V
–55 to 25°C
≤85°C
≤125°C
Unit
tPLH,
tPHL
Maximum Propagation Delay, D0–D7 to Y or Y
(Figures 2 and 6)
2.0
4.5
6.0
210
42
36
265
53
45
315
63
54
ns
tPLH,
tPHL
Maximum Propagation Delay, Data–Latch Enable to Y or Y
(Figures 3 and 6)
2.0
4.5
6.0
260
52
44
325
65
55
390
78
66
ns
tPLH,
tPHL
Maximum Propagation Delay, A0–A2 to Y or Y
(Figures 2 and 6)
2.0
4.5
6.0
270
54
46
340
68
58
405
81
69
ns
tPLH,
tPHL
Maximum Propagation Delay, Address–Latch Enable to Y or Y
(Figures 3 and 6)
2.0
4.5
6.0
270
54
46
340
68
58
405
81
69
ns
tPLZ,
tPHZ
Maximum Propagation Delay, OE1–OE3 to Y or Y
(Figures 4 and 7)
2.0
4.5
6.0
160
32
27
200
40
34
240
48
41
ns
tPZL,
tPZH
Maximum Propagation Delay, OE1–OE3 to Y or Y
(Figures 4 and 7)
2.0
4.5
6.0
125
25
21
155
31
26
190
38
32
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 6)
2.0
4.5
6.0
60
12
10
75
15
13
90
18
15
ns
Maximum Input Capacitance
10
10
10
pF
Maximum Three–State Output Capacitance (Output in High Impedance
State)
15
15
15
pF
Cin
Cout
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the Motorola High–
Speed CMOS Data Book (DL129/D).
Typical @ 25°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Package)*
48
pF
* Used to determine the no–load dynamic power consumption: PD = CPD VCC 2 f + ICC VCC . For load considerations, see Chapter 2 of the
Motorola High–Speed CMOS Data Book (DL129/D).
High–Speed CMOS Logic Data
DL129 — Rev 6
3
MOTOROLA
MC54/74HC354
PIN DESCRIPTIONS
D0–D7 (Pins 8–1) DATA INPUTS
ADDRESS–LATCH ENABLE (Pin 11)
These eight data bits are stored in a transparent latch when
the Data–Latch Enable pin is active (high). Once enabled,
changing inputs will not change the contents of the latch.
The latch is transparent to A0, A1 and A2 when enable is
inactive (low). The Address–Latch contents are unaffected
when enable is held active (high).
A0, A1, A2 (Pins 14,13,12) ADDRESS INPUTS
OE1, OE2, OE3 (Pins 15,16,17) OUTPUT ENABLES
Selects which data bit stored in the Data Latch is routed to
the outputs Y and Y.
Any of the output enable pins inactive (OE1=High or
OE2=High or OE3=Low) causes the outputs (Y and Y) to be
in high–impedance states.
DATA–LATCH ENABLE (Pin 9)
Y, Y (Pins 19,18)
The latch is transparent to D0–D7 when enable is inactive
(low). The Data–Latch contents are unaffected when enable
is held active (high).
These 3–state outputs (when not 3–stated) represent the
data bit in the Data Latch selected by the Address Latch.
TIMING REQUIREMENTS (Input tr = tf = 6 ns)
Symbol
Parameter
Guaranteed Limit
VCC
V
–55 to 25°C
≤85°C
≤125°C
Unit
tsu
Minimum Setup Time, D0–D7 to Data–Latch Enable
(Figure 5)
2.0
4.5
6.0
50
10
9
65
13
11
75
15
13
ns
tsu
Minimum Setup Time, A0–A2 to Address–Latch Enable
(Figure 5)
2.0
4.5
6.0
50
10
9
65
13
11
75
15
13
ns
th
Minimum Hold Time, Data–Latch Enable to D0–D7
(Figure 5)
2.0
4.5
6.0
5
5
5
5
5
5
5
5
5
ns
th
Minimum Hold Time, Address–Latch Enable to A0–A2
(Figure 5)
2.0
4.5
6.0
5
5
5
5
5
5
5
5
5
ns
tw
Minimum Pulse Width, Data–Latch Enable
(Figure 3)
2.0
4.5
6.0
80
16
14
100
20
17
120
24
20
ns
tw
Minimum Pulse Width, Address–Latch Enable
(Figure 3)
2.0
4.5
6.0
80
16
14
100
20
17
120
24
20
ns
1000
500
400
1000
500
400
1000
500
400
ns
tr, tf
Maximum Input Rise and Fall Times
(Figure 1)
2.0
4.5
6.0
NOTE: Information on typical parametric values can be found in Chapter 2 of the Motorola High–Speed CMOS Data Book (DL129/D).
MOTOROLA
4
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC354
FUNCTION TABLE
Address Latch Contents #
Inputs
Outputs
A2
A1
A0
Data–Latch
Enable
OE1
OE2
OE3
Y
Y
X
X
X
X
X
X
X
X
X
X
X
X
H
X
X
X
H
X
X
X
L
Z
Z
Z
Z
Z
Z
L
L
L
L
H
H
H
H
L
L
H
H
L
L
H
H
L
H
L
H
L
H
L
H
L
L
L
H
D0
D1
D2
D3
D4
D5
D6
D7
D0
D1
D2
D3
D4
D5
D6
D7
L
L
L
L
H
H
H
H
L
L
H
H
L
L
H
H
L
H
L
H
L
H
L
H
H
L
L
H
Description
Outputs in High–Impedance States
Data–Latch is Transparent
D0n
D0n
New Data is Stored in Data–Latch and is
D1n
Not Alterable
D1n
D2n
D2n
D3n
D3n
D4n
D4n
D5n
D5n
D6n
D6n
D7n
D7n
# Represents bits in Address–Latch. See Address–Latch Enable pin description.
X = Don’t Care; Z = High Impedance; D0–D7 = the data at inputs D0 through D7; D0n–D7n = the data present at inputs D0 through D7 when the
Data–Latch Enable pin was taken high.
SWITCHING WAVEFORMS
tr
tf
VALID
VCC
90%
Any Input
10%
D0–D7
A0–A2
GND
VALID
VCC
50%
GND
tPLH
Y or Y
90%
tPHL
Y or Y
50%
10%
tTLH
tTHL
Figure 1.
Figure 2.
OE1, OE2
VCC
50%
tw
Address–
Latch Enable
tPZL
tPLZ
High
Impedance
50%
Y or Y
GND
tPLH
Y or Y
GND
OE3
VCC
tPHL
50%
10%
tPZH
tPHZ
50%
Y or Y
90%
50%
VOL
VOH
High
Impedance
Figure 3.
High–Speed CMOS Logic Data
DL129 — Rev 6
Figure 4.
5
MOTOROLA
MC54/74HC354
Valid
VCC
D0–D7
A0–A2
50%
GND
tsu
th
Data–Latch
Enable
VCC
50%
GND
Figure 5.
TEST CIRCUITS
TEST
POINT
TEST
POINT
OUTPUT
DEVICE
UNDER
TEST
OUTPUT
DEVICE
UNDER
TEST
CL*
*Includes all probe and jig capacitance
CL*
*Includes all probe and jig capacitance
Figure 6.
MOTOROLA
CONNECT TO VCC WHEN
TESTING tPLZ AND tPZL.
CONNECT TO GND WHEN
TESTING tPHZ and tPZH.
1kΩ
Figure 7.
6
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC354
15
Output
Enables
OE1
16
OE2
OE3
A0
17
14
D
Q
LE Q
Address
Inputs
A1
13
D
Q
LE Q
A2
12
D
Q
LE Q
Address– 11
Latch Enable
D0
8
D
LE Q
D1
7
D
LE Q
D2
6
D
LE Q
D3
5
Data
Inputs
19
Y
D
LE Q
D4
4
3–State
Data
Outputs
D
LE Q
D5
3
18
D
Y
LE Q
D6
2
D
LE Q
D7
1
D
LE Q
Data–Latch 9
Enable
Figure 8. Expanded Logic Diagram
High–Speed CMOS Logic Data
DL129 — Rev 6
7
MOTOROLA
MC54/74HC354
OUTLINE DIMENSIONS
20
11
1
10
J SUFFIX
CERAMIC PACKAGE
CASE 732–03
ISSUE E
NOTES:
1. LEADS WITHIN 0.25 (0.010) DIAMETER, TRUE
POSITION AT SEATING PLANE, AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSIONS A AND B INCLUDE MENISCUS.
B
A
L
C
F
DIM
A
B
C
D
F
G
H
J
K
L
M
N
N
H
G
D
J
K
M
MILLIMETERS
MIN
MAX
23.88
25.15
6.60
7.49
3.81
5.08
0.38
0.56
1.40
1.65
2.54 BSC
0.51
1.27
0.20
0.30
3.18
4.06
7.62 BSC
0_
15 _
0.25
1.02
INCHES
MIN
MAX
0.940
0.990
0.260
0.295
0.150
0.200
0.015
0.022
0.055
0.065
0.100 BSC
0.020
0.050
0.008
0.012
0.125
0.160
0.300 BSC
0_
15_
0.010
0.040
SEATING
PLANE
N SUFFIX
PLASTIC PACKAGE
CASE 738–03
ISSUE E
–A–
20
11
1
10
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
B
L
C
–T–
K
SEATING
PLANE
M
N
E
G
F
J
D
M
T A
11
–B–
10X
P
0.010 (0.25)
1
M
B
M
10
20X
D
0.010 (0.25)
M
T A
B
S
J
S
F
R X 45 _
C
–T–
18X
G
K
SEATING
PLANE
M
T B
M
M
DW SUFFIX
PLASTIC SOIC PACKAGE
CASE 751D–04
ISSUE E
–A–
20
20 PL
0.25 (0.010)
20 PL
0.25 (0.010)
MOTOROLA
DIM
A
B
C
D
E
F
G
J
K
L
M
N
INCHES
MIN
MAX
1.010
1.070
0.240
0.260
0.150
0.180
0.015
0.022
0.050 BSC
0.050
0.070
0.100 BSC
0.008
0.015
0.110
0.140
0.300 BSC
0_
15 _
0.020
0.040
MILLIMETERS
MIN
MAX
25.66
27.17
6.10
6.60
3.81
4.57
0.39
0.55
1.27 BSC
1.27
1.77
2.54 BSC
0.21
0.38
2.80
3.55
7.62 BSC
0_
15_
0.51
1.01
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.150
(0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.13
(0.005) TOTAL IN EXCESS OF D DIMENSION
AT MAXIMUM MATERIAL CONDITION.
DIM
A
B
C
D
F
G
J
K
M
P
R
MILLIMETERS
MIN
MAX
12.65
12.95
7.40
7.60
2.35
2.65
0.35
0.49
0.50
0.90
1.27 BSC
0.25
0.32
0.10
0.25
0_
7_
10.05
10.55
0.25
0.75
INCHES
MIN
MAX
0.499
0.510
0.292
0.299
0.093
0.104
0.014
0.019
0.020
0.035
0.050 BSC
0.010
0.012
0.004
0.009
0_
7_
0.395
0.415
0.010
0.029
M
8
High–Speed CMOS Logic Data
DL129 — Rev 6
MC54/74HC354
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
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6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
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51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
High–Speed CMOS Logic Data
DL129 — Rev 6
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CODELINE
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*MC54/74HC354/D*
MC54/74HC354/D
MOTOROLA