MOTOROLA SEMICONDUCTOR TECHNICAL DATA 32K x 36 Bit Flow–Through BurstRAM Synchronous Fast Static RAM The MCM69F536C is a 1M–bit synchronous fast static RAM designed to provide a burstable, high performance, secondary cache for the 68K Family, PowerPC, 486, i960, and Pentium microprocessors. It is organized as 32K words of 36 bits each. This device integrates input registers, a 2–bit address counter, and high speed SRAM onto a single monolithic circuit for reduced parts count in cache data RAM applications. Synchronous design allows precise cycle control with the use of an external clock (K). BiCMOS circuitry reduces the overall power consumption of the integrated functions for greater reliability. Addresses (SA), data inputs (DQx), and all control signals except output enable (G) and Linear Burst Order (LBO) are clock (K) controlled through positive–edge–triggered noninverting registers. Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst addresses can be generated internally by the MCM69F536C (burst sequence operates in linear or interleaved mode dependent upon the state of LBO) and controlled by the burst address advance (ADV) input pin. Write cycles are internally self–timed and are initiated by the rising edge of the clock (K) input. This feature eliminates complex off–chip write pulse generation and provides increased timing flexibility for incoming signals. Synchronous byte write (SBx), synchronous global write (SGW), and synchronous write enable SW are provided to allow writes to either individual bytes or to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls DQa, SBb controls DQb, and so on. Individual bytes are written if the selected byte writes SBx are asserted with SW. All bytes are written if either SGW is asserted or if all SBx and SW are asserted. For read cycles, a flow–through SRAM allows output data to simply flow freely from the memory array. The MCM69F536C operates from a 3.3 V power supply and all inputs and outputs are LVTTL compatible. Order this document by MCM69F536C/D MCM69F536C TQ PACKAGE TQFP CASE 983A–01 • MCM69F536C–8.5 = 8.5 ns Access / 12 ns Cycle MCM69F536C–9 = 9 ns Access / 12 ns Cycle MCM69F536C–10 = 10 ns Access / 15 ns Cycle MCM69F536C–12 = 12 ns Access / 16.6 ns Cycle • Single 3.3 V + 10%, – 5% Power Supply • ADSP, ADSC, and ADV Burst Control Pins • Selectable Burst Sequencing Order (Linear/Interleaved) • Internally Self–Timed Write Cycle • Byte Write and Global Write Control • 5 V Tolerant on all Pins (Inputs and I/Os) • 100–Pin TQFP Package The PowerPC name is a trademark of IBM Corp., used under license therefrom. i960 and Pentium are trademarks of Intel Corp. REV 3 2/18/98 Motorola, Inc. 1998 MOTOROLA FAST SRAM MCM69F536C 1 FUNCTIONAL BLOCK DIAGRAM LBO ADV K ADSC BURST COUNTER K2 2 15 32K x 36 ARRAY CLR ADSP 2 SA SA1 SA0 ADDRESS REGISTER 15 13 SGW SW SBa SBb WRITE REGISTER a 36 36 WRITE REGISTER b 4 SBc SBd WRITE REGISTER c DATA–IN REGISTER K WRITE REGISTER d K2 SE1 SE2 SE3 ENABLE REGISTER G DQa – DQd MCM69F536C 2 MOTOROLA FAST SRAM SA SA SE1 SE2 SBd SBc SBb SBa SE3 VDD VSS K SGW SW G ADSC ADSP ADV SA SA PIN ASSIGNMENT 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 78 3 4 77 5 76 6 75 7 74 8 73 9 72 10 71 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 DQb DQb DQb VDD VSS DQb DQb DQb DQb VSS VDD DQb DQb VSS NC VDD NC DQa DQa VDD VSS DQa DQa DQa DQa VSS VDD DQa DQa DQa LBO SA SA SA SA SA1 SA0 NC NC VSS VDD NC NC SA SA SA SA SA NC NC DQc DQc DQc VDD VSS DQc DQc DQc DQc VSS VDD DQc DQc NC VDD NC VSS DQd DQd VDD VSS DQd DQd DQd DQd VSS VDD DQd DQd DQd MOTOROLA FAST SRAM MCM69F536C 3 PIN DESCRIPTIONS Pin Locations Symbol Type 85 ADSC Input Synchronous Address Status Controller: Initiates READ, WRITE, or chip deselect cycle. 84 ADSP Input Synchronous Address Status Processor: Initiates READ, WRITE, or chip deselect cycle (exception — chip deselect does not occur when ADSP is asserted and SE1 is high). 83 ADV Input Synchronous Address Advance: Increments address count in accordance with counter type selected (linear/interleaved). (a) 51, 52, 53, 56, 57, 58, 59, 62, 63 (b) 68, 69, 72, 73, 74, 75, 78, 79, 80 (c) 1, 2, 3, 6, 7, 8, 9, 12, 13 (d) 18, 19, 22, 23, 24, 25, 28, 29, 30 DQx I/O 86 G Input Asynchronous Output Enable Input: Low — enables output buffers (DQx pins). High — DQx pins are high impedance. 89 K Input Clock: This signal registers the address, data in, and all control signals except G and LBO. 31 LBO Input Linear Burst Order Input: This pin must remain in steady state (this signal not registered or latched). It must be tied high or low. Low — linear burst count (68K/PowerPC). High — interleaved burst count (486/i960/Pentium). 32, 33, 34, 35, 44, 45, 46, 47, 48, 81, 82, 99, 100 SA Input Synchronous Address Inputs: These inputs are registered and must meet setup and hold times. 36, 37 SA1, SA0 Input Synchronous Address Inputs: These pins must be wired to the two LSBs of the address bus for proper burst operation. These inputs are registered and must meet setup and hold times. 93, 94, 95, 96 (a) (b) (c) (d) SBx Input Synchronous Byte Write Inputs: “x” refers to the byte being written (byte a, b, c, d). SGW overrides SBx. 98 SE1 Input Synchronous Chip Enable: Active low to enable chip. Negated high — blocks ADSP or deselects chip when ADSC is asserted. 97 SE2 Input Synchronous Chip Enable: Active high for depth expansion. 92 SE3 Input Synchronous Chip Enable: Active low for depth expansion. 88 SGW Input Synchronous Global Write: This signal writes all bytes regardless of the status of the SBx and SW signals. If only byte write signals SBx are being used, tie this pin high. 87 SW Input Synchronous Write: This signal writes only those bytes that have been selected using the byte write SBx pins. If only byte write signals SBx are being used, tie this pin low. 4, 11, 15, 20, 27, 41, 54, 61, 65, 70, 77, 91 VDD Supply Power Supply: 3.3 V + 10%, – 5%. 5, 10, 17, 21, 26, 40, 55, 60, 67, 71, 76, 90 VSS Supply Ground. 64 NC Input 14, 16, 38, 39, 42, 43, 49, 50, 66 NC — MCM69F536C 4 Description Synchronous Data I/O: “x” refers to the byte being read or written (byte a, b, c, d). No Connection: There is no connection to the chip. For compatibility reasons, it is recommended that this pin be tied low for system designs that do not have a sleep mode associated with the cache/memory controller. Other vendors’ RAMs may have implemented this Sleep Mode (ZZ) feature. No Connection: There is no connection to the chip. MOTOROLA FAST SRAM TRUTH TABLE (See Notes 1 through 4) Address Used SE1 SE2 SE3 ADSP ADSC ADV G3 DQx Write 2, 4 Deselect None 1 X X X 0 X X High–Z X Deselect None 0 X 1 0 X X X High–Z X Deselect None 0 0 X 0 X X X High–Z X Deselect None X X 1 1 0 X X High–Z X Next Cycle Deselect None X 0 X 1 0 X X High–Z X Begin Read External 0 1 0 0 X X 0 DQ READ Begin Read External 0 1 0 1 0 X 0 DQ READ Continue Read Next X X X 1 1 0 1 High–Z READ Continue Read Next X X X 1 1 0 0 DQ READ Continue Read Next 1 X X X 1 0 1 High–Z READ Continue Read Next 1 X X X 1 0 0 DQ READ Suspend Read Current X X X 1 1 1 1 High–Z READ Suspend Read Current X X X 1 1 1 0 DQ READ Suspend Read Current 1 X X X 1 1 1 High–Z READ Suspend Read Current 1 X X X 1 1 0 DQ READ Begin Write Current X X X 1 1 1 X High–Z WRITE Begin Write Current 1 X X X 1 1 X High–Z WRITE Begin Write External 0 1 0 1 0 X X High–Z WRITE Next X X X 1 1 0 X High–Z WRITE Continue Write Continue Write Next 1 X X X 1 0 X High–Z WRITE Suspend Write Current X X X 1 1 1 X High–Z WRITE Suspend Write Current 1 X X X 1 1 X High–Z WRITE NOTES: 1. 2. 3. 4. X = Don’t Care. 1 = logic high. 0 = logic low. Write is defined as either 1) any SBx and SW low or 2) SGW is low. G is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (tGLQX) following G going low. On write cycles that follow read cycles, G must be negated prior to the start of the write cycle to ensure proper write data setup times. G must also remain negated at the completion of the write cycle to ensure proper write data hold times. LINEAR BURST ADDRESS TABLE (LBO = VSS) 1st Address (External) 2nd Address (Internal) 3rd Address (Internal) 4th Address (Internal) X . . . X00 X . . . X01 X . . . X10 X . . . X11 X . . . X01 X . . . X10 X . . . X11 X . . . X00 X . . . X10 X . . . X11 X . . . X00 X . . . X01 X . . . X11 X . . . X00 X . . . X01 X . . . X10 INTERLEAVED BURST ADDRESS TABLE (LBO = VDD) 1st Address (External) 2nd Address (Internal) 3rd Address (Internal) 4th Address (Internal) X . . . X00 X . . . X01 X . . . X10 X . . . X11 X . . . X01 X . . . X00 X . . . X11 X . . . X10 X . . . X10 X . . . X11 X . . . X00 X . . . X01 X . . . X11 X . . . X10 X . . . X01 X . . . X00 WRITE TRUTH TABLE SGW SW SBa SBb SBc Read Cycle Type H H X X X X Read H L H H H H Write Byte a H L L H H H Write Byte b H L H L H H Write Byte c H L H H L H Write Byte d H L H H H L Write All Bytes H L L L L L Write All Bytes L X X X X X MOTOROLA FAST SRAM SBd MCM69F536C 5 ABSOLUTE MAXIMUM RATINGS (See Note 1) Rating Symbol Value Unit VDD – 0.5 to + 4.6 V Vin, Vout – 0.5 to 6.0 V Iout ± 20 mA Power Supply Voltage Voltage Relative to VSS for Any Pin Except VDD Output Current (per I/O) Package Power Dissipation (See Note 2) Temperature Under Bias Storage Temperature PD 1.6 W Tbias – 10 to 85 °C Tstg – 55 to 125 °C This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high–impedance circuit. NOTES: 1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPER– ATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. 2. Power dissipation capability is dependent upon package characteristics and use environment. See Package Thermal Characteristics. PACKAGE THERMAL CHARACTERISTICS Rating Symbol Max Unit Notes RθJA 40 25 °C/W 1, 2 Thermal Resistance Junction to Board (Bottom) RθJB 17 °C/W 1, 3 Thermal Resistance Junction to Case (Top) RθJC 9 °C/W 1, 4 Thermal Resistance Junction to Ambient (@ 200 lfm) Single–Layer Board Four–Layer Board NOTES: 1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, board population, and board thermal resistance. 2. Per SEMI G38–87. 3. Indicates the average thermal resistance between the die and the printed circuit board. 4. Indicates the average thermal resistance between the die and the case top surface via the cold plate method (MIL SPEC–883 Method 1012.1). MCM69F536C 6 MOTOROLA FAST SRAM DC OPERATING CONDITIONS AND CHARACTERISTICS (VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS (Voltages Referenced to VSS = 0 V) Parameter Symbol Min Typ Max Unit VDD 3.135 3.3 3.6 V Input Low Voltage VIL – 0.5* — 0.8 V Input High Voltage VIH 2.0 — 5.5** V Supply Voltage * VIL ≥ – 2 V for t ≤ tKHKH/2. ** VIH ≤ 6 V for tKHKH/2. DC CHARACTERISTICS AND SUPPLY CURRENTS Parameter Symbol Min Max Unit Input Leakage Current (0 V ≤ Vin ≤ VDD) (Excluding LBO) Ilkg(I) — ±1 µA Output Leakage Current (0 V ≤ Vin ≤ VDD) Ilkg(O) — ±1 µA Notes AC Supply Current (Device Selected, All Outputs Open, All Inputs Toggling at Vin ≤ VIL or ≥ VIH, Cycle Time ≥ tKHKH min) MCM69F536C–8.5 MCM69F536C–9 MCM69F536C–10 MCM69F536C–12 IDDA — 320 320 310 300 mA 1, 2, 3 CMOS Standby Supply Current (Deselected, Clock (K) Cycle Time ≥ tKHKH, All Inputs Toggling at CMOS Levels Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V) MCM69F536C–8.5 MCM69F536C–9 MCM69F536C–10 MCM69F536C–12 ISB1 — 150 150 140 130 mA 4 Clock Running Supply Current (Deselected, Clock (K) Cycle Time ≥ tKHKH, All Other Inputs Held to Static CMOS Levels Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V) MCM69F536C–8.5 MCM69F536C–9 MCM69F536C–10 MCM69F536C–12 ISB2 — 55 55 50 45 mA 4 Output Low Voltage (IOL = 8 mA) VOL — 0.4 V Output High Voltage (IOH = – 4 mA) VOH 2.4 — V NOTES: 1. Reference AC Operating Conditions and Characteristics for input and timing. 2. All addresses transition simultaneously low (LSB) and then high (HSB). 3. Data states are all zero. 4. Device in deselected mode as defined by the Truth Table. CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, TA = 25°C, Periodically Sampled Rather Than 100% Tested) Symbol Min Typ Max Unit Input Capacitance Cin — 4 6 pF Input/Output Capacitance CI/O — 7 9 pF Parameter MOTOROLA FAST SRAM MCM69F536C 7 AC OPERATING CONDITIONS AND CHARACTERISTICS (VDD = 3.3 V + 10%, – 5%, TA = 0 to 70°C, Unless Otherwise Noted) Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . 1 V/ns (20% to 80%) Output Timing Reference Level . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V Output Load . . . . . . . . . . . . . . See Figure 1 Unless Otherwise Noted READ/WRITE CYCLE TIMING (See Notes 1, 2, and 3) 69F536C–8.5 69F536C–9 69F536C–10 69F536C–12 S b l Symbol Min Max Min Max Min Max Min Max U i Unit Cycle Time tKHKH 12 — 12 — 15 — 16.6 — ns Clock High Pulse Width tKHKL 4 — 4 — 5 — 6 — ns Clock Low Pulse Width tKLKH 4 — 4 — 5 — 6 — ns Clock Access Time tKHQV — 8.5 — 9 — 10 — 12 ns Output Enable to Output Valid tGLQV — 5 — 5 — 5 — 6 ns Clock High to Output Active tKHQX1 0 — 0 — 0 — 0 — ns 4 Clock High to Output Change tKHQX2 3 — 3 — 3 — 3 — ns 4 P Parameter N Notes Output Enable to Output Active tGLQX 0 — 0 — 0 — 0 — ns 4 Output Disable to Q High–Z tGHQZ — 5 — 5 — 5 — 6 ns 4, 5 Clock High to Q High–Z tKHQZ 2.5 5 3 5 3 5 3 6 ns 4, 5 Setup Times: Address ADSP, ADSC, ADV Data In Write Chip Enable tADKH tADSKH tDVKH tWVKH tEVKH 2.5 — 2.5 — 2.5 — 2.5 — ns Hold Times: Address ADSP, ADSC, ADV Data In Write Chip Enable tKHAX tKHADSX tKHDX tKHWX tKHEX 0.5 — 0.5 — 0.5 — 0.5 — ns NOTES: 1. Write is defined as either any SBx and SW low or SGW is low. Chip Enable is defined as SE1 low, SE2 high, and SE3 low whenever ADSP or ADSC is asserted. 2. All read and write cycle timings are referenced from K or G. 3. G is a don’t care after write cycle begins. To prevent bus contention, G should be negated prior to start of write cycle. 4. This parameter is sampled and not 100% tested. 5. Measured at ± 200 mV from steady state. OUTPUT Z0 = 50 Ω RL = 50 Ω VT = 1.5 V Figure 1. AC Test Load MCM69F536C 8 MOTOROLA FAST SRAM MOTOROLA FAST SRAM MCM69F536C 9 Q(n) A SINGLE READ tKHQX1 Q(A) tKHQV B tKHKL NOTE: E low = SE2 high and SE3 low. W low = SGW low and/or SW and SBx low. DESELECTED tKHQZ DQx G W E SE1 ADV ADSC ADSP SA K tKHKH tKHQX2 Q(B) Q(B+2) BURST READ Q(B+1) tGHQZ Q(B+3) BURST WRAPS AROUND tKLKH Q(B) READ/WRITE CYCLES ADSP, SA SE2, SE3 IGNORED D(C) C D(C+2) BURST WRITE D(C+1) D(C+3) SINGLE READ tGLQX tGLQV D Q(D) APPLICATION INFORMATION The MCM69F536C BurstRAM is a high speed synchronous SRAM that is intended for use primarily in secondary or level two (L2) cache memory applications. L2 caches are found in a variety of classes of computers — from the desktop personal computer to the high–end servers and transaction processing machines. For simplicity, the majority of L2 caches today are direct mapped and are single bank implementations. These caches tend to be designed for bus speeds in the range of 33 to 66 MHz. At these bus rates, flow–through (non–pipelined) BurstRAMs can be used since their access times meet the speed requirements for a minimum–latency, zero–wait state L2 cache interface. Latency is a measure (time) of “dead” time the memory system exhibits as a result of a memory request. For those applications that demand bus operation at greater than 66 MHz or multi–bank L2 caches at 66 MHz, the pipelined (register/register) version of the 32K x 36 BurstRAM (MCM69P536) allows the designer to maintain zero–wait state operation. Multiple banks of BurstRAMs create additional bus loading and can cause the system to otherwise miss its timing requirements. The access time (clock–to– valid–data) of a pipelined BurstRAM is inherently faster than a non–pipelined device by a few nanoseconds. This does not come without cost. The cost is latency — “dead” time. For L2 cache designs that must minimize both latency and wait states, flow–through BurstRAMs are the best choice in achieving the highest performance in L2 cache design. NON–BURST SYNCHRONOUS OPERATION Although this BurstRAM has been designed for 68K–, PowerPC–, 486–, i960–, and Pentium–based systems, these SRAMs can be used in other high speed L2 cache or memory applications that do not require the burst address feature. Most L2 caches designed with a synchronous interface can make use of the MCM69F536C. The burst counter feature of the BurstRAM can be disabled, and the SRAM can be configured to act upon a continuous stream of addresses. See Figure 2. CONTROL PIN TIE VALUES EXAMPLE (H ≥ VIH, L ≤ VIL) Non–Burst ADSP ADSC ADV SE1 SE2 LBO Sync Non–Burst, Flow–Through SRAM H L H L H X NOTE: Although X is specified in the table as a don’t care, the pin must be tied either high or low. K ADDR A B C D E F G D(E) D(F) D(G) H SE3 W G DQ Q(A) Q(B) READS Q(C) Q(D) D(H) WRITES Figure 2. Example Configuration as Non–Burst Synchronous SRAM MCM69F536C 10 MOTOROLA FAST SRAM ORDERING INFORMATION (Order by Full Part Number) MCM 69F536C XX XX X Motorola Memory Prefix Blank = Trays, R = Tape and Reel Part Number Speed (8.5 = 8.5 ns, 9 = 9 ns, 10 = 10 ns, 12 = 12 ns) Package (TQ = TQFP) Full Part Numbers — MCM69F536CTQ8.5 MCM69F536CTQ9 MCM69F536CTQ10 MCM69F536CTQ12 MCM69F536CTQ8.5R MCM69F536CTQ9R MCM69F536CTQ10R MCM69F536CTQ12R Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA FAST SRAM MCM69F536C 11 PACKAGE DIMENSIONS TQ PACKAGE TQFP CASE 983A–01 e 4X 0.20 (0.008) H A–B D 2X 30 TIPS e/2 0.20 (0.008) C A–B D –D– 80 51 B 50 81 –A– –X– B E/2 X=A, B, OR D –B– VIEW Y E1 E BASE METAL PLATING ÉÉÉÉ ÇÇÇÇ ÇÇÇÇ ÉÉÉÉ b1 E1/2 c 31 100 1 30 D1/2 b D/2 0.13 (0.005) D1 D 0.20 (0.008) C A–B D A q 2 0.10 (0.004) C –H– –C– SEATING PLANE q 3 VIEW AB S S q R2 A2 L2 L L1 R1 C A–B S D S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DATUMS –A–, –B– AND –D– TO BE DETERMINED AT DATUM PLANE –H–. 5. DIMENSIONS D AND E TO BE DETERMINED AT SEATING PLANE –C–. 6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.25 (0.010) PER SIDE. DIMENSIONS D1 AND B1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE –H–. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. DAMBAR PROTRUSION SHALL NOT CAUSE THE b DIMENSION TO EXCEED 0.45 (0.018). 1 0.25 (0.010) A1 M SECTION B–B 2X 20 TIPS 0.05 (0.002) c1 GAGE PLANE q VIEW AB DIM A A1 A2 b b1 c c1 D D1 E E1 e L L1 L2 S R1 R2 q q q q 1 2 3 MILLIMETERS MIN MAX ––– 1.60 0.05 0.15 1.35 1.45 0.22 0.38 0.22 0.33 0.09 0.20 0.09 0.16 22.00 BSC 20.00 BSC 16.00 BSC 14.00 BSC 0.65 BSC 0.45 0.75 1.00 REF 0.50 REF 0.20 ––– 0.08 ––– 0.08 0.20 0_ 7_ 0_ ––– 11 _ 13 _ 11 _ 13 _ INCHES MIN MAX ––– 0.063 0.002 0.006 0.053 0.057 0.009 0.015 0.009 0.013 0.004 0.008 0.004 0.006 0.866 BSC 0.787 BSC 0.630 BSC 0.551 BSC 0.026 BSC 0.018 0.030 0.039 REF 0.020 REF 0.008 ––– 0.003 ––– 0.003 0.008 0_ 7_ 0_ ––– 11 _ 13 _ 11 _ 13 _ Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado, 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 Mfax : [email protected] – TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 – http://sps.motorola.com /mfax / HOME PAGE : http://motorola.com/sps / CUSTOMER FOCUS CENTER: 1-800-521-6274 MCM69F536C 12 ◊ MOTOROLAMCM69F536C/D FAST SRAM