MOTOROLA MCR16

Order this document
by MCR16/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola preferred devices
Designed primarily for half–wave ac control applications, such as motor
controls, heating controls, and power supplies; or wherever half–wave, silicon
gate–controlled devices are needed.
SCRs
16 AMPERES RMS
400 thru 800
VOLTS
• Blocking Voltage to 800 Volts
• On-State Current Rating of 16 Amperes RMS
• High Surge Current Capability — 160 Amperes
• Industry Standard TO–220AB Package for Ease of Design
A
• Glass Passivated Junctions for Reliability and Uniformity
K
A
G
CASE 221A–06
(TO-220AB)
Style 3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Peak Repetitive Off-State Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = –40 to 125°C)
Symbol
Value
VDRM
VRRM
MCR16D
MCR16M
MCR16N
On-State RMS Current
(All Conduction Angles)
Peak Non-repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Unit
Volts
400
600
800
IT(RMS)
16
A
ITSM
160
A
I2t
106
A2sec
PGM
5.0
Watts
PG(AV)
0.5
Watts
IGM
2.0
A
TJ
– 40 to +125
°C
Tstg
– 40 to +150
°C
RθJC
RθJA
1.5
62.5
°C/W
TL
260
°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
IDRM
IRRM
—
—
—
—
0.01
2.0
mA
Peak On-State Voltage* (ITM = 32 A)
VTM
—
—
1.7
Volts
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω)
IGT
2.0
8.0
20
mA
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω)
VGT
0.5
0.65
1.0
Volts
IH
4.0
25
40
mA
dv/dt
50
200
—
V/µs
Characteristic
OFF CHARACTERISTICS
Peak Forward Blocking Current
Peak Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
ON CHARACTERISTICS
Hold Current (Anode Voltage =12 V)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 25°C)
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
125
120
a
115
a = Conduction
Angle
110
105
100
a=30°
95
90
0
2
60°
90° 120° 180°
dc
4
6
8
10
12
14
IT(AV), AVERAGE ON–STATE CURRENT (AMP)
16
MAXIMUM AVERAGE POWER P(AV) DISSIPATION (WATTS)
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
22
20
a
16
180°
120°
a = Conduction
14
Angle
12
90°
60°
a=30°
10
8
6
4
2
0
Figure 1. Average Current Derating
0
2
4
6
8
10
12
14
IT(AV), AVERAGE ON–STATE CURRENT (AMP)
16
Figure 2. Maximum On–State Power Dissipation
100
1
Typical @ TJ=25 °C
Maximum @ TJ=125 °C
10
R(t) TRANSIENT THERMAL R (NORMALIZED)
I T , INSTANTANEOUS ON-STATE CURRENT (AMPS)
dc
18
Z qJC(t)
+ RqJC(t) @ r(t)
0.1
1
0.1
0.5
Maximum @ TJ=25 °C
1
1.5
2
2.5
3
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
Figure 3. On–State Characteristics
2
3.5
0.01
0.1
1
10
100
t, TIME (ms)
1000
@
1 10 4
Figure 4. Transient Thermal Response
Motorola Thyristor Device Data
100
I H, HOLDING CURRENT (mA)
I L , LATCHING CURRENT (mA)
100
10
–40 –25
–10
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (_C)
95
10
–40
110 125
–25
Figure 5. Typical Holding Current Versus
Junction Temperature
95
110 125
0.85
VGT , GATE TRIGGER VOLTAGE (VOLTS)
I GT, GATE TRIGGER CURRENT (mA)
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Latching Current Versus
Junction Temperature
100
10
1
–40
–25
–10
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
95
110 125
0.80
0.75
0.70
0.65
0.60
0.55
0.50
0.45
0.40
–40
Figure 7. Typical Gate Trigger Current Versus
Junction Temperature
–25
–10
5
20
35
50
65
80
TJ, JUNCTION TEMPERATURE (°C)
95
110 125
Figure 8. Typical Gate Trigger Voltage Versus
Junction Temperature
1400
TJ
+ 125°C
ITSM , PEAK SURGE CURRENT (AMP)
160
1200
STATIC dv/dt (V/uS)
–10
+
V PK 800 V
1000
800
600
400
10
100
1000
RGK, GATE CATHODE RESISTANCE (OHMS)
@
1 10 4
Figure 9. Typical Exponential Static dv/dt Versus
Gate Cathode Resistance.
Motorola Thyristor Device Data
1 Cycle
150
140
130
120
110
TJ
100
90
1
+ 125°C f + 60Hz
2
3
4
5
6
7
NUMBER OF CYCLES
8
9
10
Figure 10. Maximum Non–Repetitive
Surge Current
3
PACKAGE DIMENSIONS
–T–
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
C
F
T
S
4
A
Q
1 2 3
U
H
K
Z
L
R
V
J
STYLE 3:
PIN 1.
2.
3.
4.
G
D
CASE 221A–06
(TO-220AB)
N
CATHODE
ANODE
GATE
ANODE
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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4
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Motorola Thyristor Device Data
*MCR16/D*
MCR16/D