Order this document by MCR16/D SEMICONDUCTOR TECHNICAL DATA *Motorola preferred devices Designed primarily for half–wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half–wave, silicon gate–controlled devices are needed. SCRs 16 AMPERES RMS 400 thru 800 VOLTS • Blocking Voltage to 800 Volts • On-State Current Rating of 16 Amperes RMS • High Surge Current Capability — 160 Amperes • Industry Standard TO–220AB Package for Ease of Design A • Glass Passivated Junctions for Reliability and Uniformity K A G CASE 221A–06 (TO-220AB) Style 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Peak Repetitive Off-State Voltage (1) Peak Repetitive Reverse Voltage (TJ = –40 to 125°C) Symbol Value VDRM VRRM MCR16D MCR16M MCR16N On-State RMS Current (All Conduction Angles) Peak Non-repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Peak Gate Current (Pulse Width ≤ 1.0 µs, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Unit Volts 400 600 800 IT(RMS) 16 A ITSM 160 A I2t 106 A2sec PGM 5.0 Watts PG(AV) 0.5 Watts IGM 2.0 A TJ – 40 to +125 °C Tstg – 40 to +150 °C RθJC RθJA 1.5 62.5 °C/W TL 260 °C THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Min Typ Max Unit IDRM IRRM — — — — 0.01 2.0 mA Peak On-State Voltage* (ITM = 32 A) VTM — — 1.7 Volts Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) IGT 2.0 8.0 20 mA Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) VGT 0.5 0.65 1.0 Volts IH 4.0 25 40 mA dv/dt 50 200 — V/µs Characteristic OFF CHARACTERISTICS Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C ON CHARACTERISTICS Hold Current (Anode Voltage =12 V) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 25°C) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) 125 120 a 115 a = Conduction Angle 110 105 100 a=30° 95 90 0 2 60° 90° 120° 180° dc 4 6 8 10 12 14 IT(AV), AVERAGE ON–STATE CURRENT (AMP) 16 MAXIMUM AVERAGE POWER P(AV) DISSIPATION (WATTS) *Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. 22 20 a 16 180° 120° a = Conduction 14 Angle 12 90° 60° a=30° 10 8 6 4 2 0 Figure 1. Average Current Derating 0 2 4 6 8 10 12 14 IT(AV), AVERAGE ON–STATE CURRENT (AMP) 16 Figure 2. Maximum On–State Power Dissipation 100 1 Typical @ TJ=25 °C Maximum @ TJ=125 °C 10 R(t) TRANSIENT THERMAL R (NORMALIZED) I T , INSTANTANEOUS ON-STATE CURRENT (AMPS) dc 18 Z qJC(t) + RqJC(t) @ r(t) 0.1 1 0.1 0.5 Maximum @ TJ=25 °C 1 1.5 2 2.5 3 VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) Figure 3. On–State Characteristics 2 3.5 0.01 0.1 1 10 100 t, TIME (ms) 1000 @ 1 10 4 Figure 4. Transient Thermal Response Motorola Thyristor Device Data 100 I H, HOLDING CURRENT (mA) I L , LATCHING CURRENT (mA) 100 10 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (_C) 95 10 –40 110 125 –25 Figure 5. Typical Holding Current Versus Junction Temperature 95 110 125 0.85 VGT , GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT (mA) 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) Figure 6. Typical Latching Current Versus Junction Temperature 100 10 1 –40 –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.40 –40 Figure 7. Typical Gate Trigger Current Versus Junction Temperature –25 –10 5 20 35 50 65 80 TJ, JUNCTION TEMPERATURE (°C) 95 110 125 Figure 8. Typical Gate Trigger Voltage Versus Junction Temperature 1400 TJ + 125°C ITSM , PEAK SURGE CURRENT (AMP) 160 1200 STATIC dv/dt (V/uS) –10 + V PK 800 V 1000 800 600 400 10 100 1000 RGK, GATE CATHODE RESISTANCE (OHMS) @ 1 10 4 Figure 9. Typical Exponential Static dv/dt Versus Gate Cathode Resistance. Motorola Thyristor Device Data 1 Cycle 150 140 130 120 110 TJ 100 90 1 + 125°C f + 60Hz 2 3 4 5 6 7 NUMBER OF CYCLES 8 9 10 Figure 10. Maximum Non–Repetitive Surge Current 3 PACKAGE DIMENSIONS –T– B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C F T S 4 A Q 1 2 3 U H K Z L R V J STYLE 3: PIN 1. 2. 3. 4. G D CASE 221A–06 (TO-220AB) N CATHODE ANODE GATE ANODE DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MCR16/D* MCR16/D