Order this document by 2N6342/D SEMICONDUCTOR TECHNICAL DATA Silicon Bidirectional Triode Thyristors . . . designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. TRIACs 8 AMPERES RMS 200 thru 800 VOLTS • Blocking Voltage to 800 Volts • All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Gate Triggering Guaranteed in Two Modes (2N6342, 2N6343, 2N6344, 2N6345) or Four Modes (2N6346, 2N6347, 2N6348, 2N6349) • For 400 Hz Operation, Consult Factory • 12 Ampere Devices Available as 2N6342A thru 2N6349A MT1 MT2 G CASE 221A-04 (TO-220AB) STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating *Peak Repetitive Off-State Voltage(1) (Gate Open, TJ = –40 to +110°C) 1/2 Sine Wave 50 to 60 Hz, Gate Open *RMS On-State Current Full Cycle Sine Wave 50 to 60 Hz Symbol Value VDRM 2N6342, 2N6346 2N6343, 2N6347 2N6344, 2N6348 2N6345, 2N6349 (TC = +80°C) (TC = +90°C) *Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +80°C) Preceded and followed by Rated Current Circuit Fusing (t = 8.3 ms) *Peak Gate Power (TC = +80°C, Pulse Width = 2 µs) Unit Volts 200 400 600 800 IT(RMS) 8 4 Amps ITSM 100 Amps I2t 40 A2s PGM 20 Watts PG(AV) 0.5 Watt *Peak Gate Current IGM 2 Amps *Peak Gate Voltage VGM 10 Volts TJ –40 to +125 °C Tstg –40 to +150 °C *Average Gate Power (TC = +80°C, t = 8.3 ms) *Operating Junction Temperature Range *Storage Temperature Range 1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. REV 1 Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Characteristic *Thermal Resistance, Junction to Case Symbol Max Unit RθJC 2.2 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, and Either Polarity of MT2 to MT1 Voltage, unless otherwise noted.) Characteristic Symbol *Peak Blocking Current (VD = Rated VDRM, gate open) TJ = 25°C TJ = 100°C Typ Max Unit — — — — 10 2 µA mA — 1.3 1.55 Volts IDRM *Peak On-State Voltage (ITM = 11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle VTM p 2%) Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) (Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) All Types MT2(+), G(–) 2N6346 thru 49 MT2(–), G(–) All Types MT2(–), G(+) 2N6346 thru 49 *MT2(+), G(+); MT2(–), G(–) TC = –40°C All Types *MT2(+), G(–); MT2(–), G(+) TC = –40°C 2N6346 thru 49 IGT Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) (Minimum Gate Pulse Width = 2 µs) MT2(+), G(+) All Types MT2(+), G(–) 2N6346 thru 49 MT2(–), G(–) All Types MT2(–), G(+) 2N6346 thru 49 *MT2(+), G(+); MT2(–), G(–) TC = –40°C All Types *MT2(+), G(–); MT2(–), G(+) TC = –40°C 2N6346 thru 49 (VD = Rated VDRM, RL = 10 k Ohms, TJ = 100°C) *MT2(+), G(+); MT2(–), G(–) All Types *MT2(+), G(–); MT2(–), G(–) 2N6346 thru 49 VGT *Holding Current (VD = 12 Vdc, Gate Open) (IT = 200 mA) Min mA — — — — — — 12 12 20 35 — — 50 75 50 75 100 125 Volts — — — — — — 0.9 0.9 1.1 1.4 — — 2 2.5 2 2.5 2.5 3 0.2 0.2 — — — — — — 6 — 40 75 tgt — 1.5 2 µs dv/dt(c) — 5 — V/µs IH mA TC = 25°C *TC = –40°C *Turn-On Time (VD = Rated VDRM, ITM = 11 A, IGT = 120 mA, Rise Time = 0.1 µs, Pulse Width = 2 µs) Critical Rate of Rise of Commutation Voltage (VD = Rated VDRM, ITM = 11 A, Commutating di/dt = 4.0 A/ms, Gate Unenergized, TC = 80°C) *Indicates JEDEC Registered Data. FIGURE 1 – RMS CURRENT DERATING FIGURE 2 – ON-STATE POWER DISSIPATION 10 α = 30° 96 60° 90° 120° 92 180° α 88 α 84 α = CONDUCTION ANGLE dc dc α = 180° α 8.0 120° α 6.0 90° α = CONDUCTION ANGLE 60° 30° TJ 100°C [ 4.0 2.0 0 80 0 2 P(AV) , AVERAGE POWER (WATTS) TC , CASE TEMPERATURE ( °C) 100 1.0 2.0 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMP) 7.0 8.0 Motorola Thyristor Device Data FIGURE 3 – TYPICAL GATE TRIGGER VOLTAGE FIGURE 4 – TYPICAL GATE TRIGGER CURRENT 50 OFF-STATE VOLTAGE = 12 V I GT , GATE TRIGGER CURRENT (mA) Vgt , GATE TRIGGER VOLTAGE (VOLTS) 1.8 1.6 1.4 QUADRANT 4 1.2 1.0 0.8 QUADRANTS 0.6 0.4 –60 1 2 3 –40 –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 OFF-STATE VOLTAGE = 12 V 30 20 1 2 QUADRANT 10 3 4 7.0 5.0 –60 –40 140 FIGURE 5 – ON-STATE CHARACTERISTICS –20 0 20 40 60 80 100 TJ, JUNCTION TEMPERATURE (°C) 120 140 FIGURE 6 – TYPICAL HOLDING CURRENT 100 20 GATE OPEN I H , HOLDING CURRENT (mA) 70 50 30 TJ = 100°C 25°C 10 7.0 5.0 MAIN TERMINAL #2 POSITIVE 10 3.0 7.0 2.0 –60 5.0 –40 –20 0 20 40 80 100 60 TJ, JUNCTION TEMPERATURE (°C) 120 140 3.0 2.0 FIGURE 7 – MAXIMUM NON-REPETITIVE SURGE CURRENT 100 ITSM , PEAK SURGE CURRENT (AMP) i TM, INSTANTANEOUS ON-STATE CURRENT (AMP) 20 MAIN TERMINAL #1 POSITIVE 1.0 0.7 0.5 0.3 0.2 0.1 0.4 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0.8 vTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Motorola Thyristor Device Data 4.4 80 60 40 CYCLE 20 TJ = 100°C f = 60 Hz Surge is preceded and followed by rated current 0 1.0 2.0 3.0 5.0 NUMBER OF CYCLES 7.0 10 3 FIGURE 8 – TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.5 0.2 ZθJC(t) = r(t) • RθJC 0.1 0.05 0.02 0.01 0.1 4 0.2 0.5 1.0 2.0 5.0 20 50 t,TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– B F T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. SEATING PLANE C S 4 Q A 1 2 3 STYLE 4: PIN 1. 2. 3. 4. U H K Z R L V J G D N MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A-04 (TO–220AB) Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ Motorola Thyristor Device Data *2N6342/D* 2N6342/D