Order this document by MCR12DSM/D SEMICONDUCTOR TECHNICAL DATA Reverse Blocking Thyristors Motorola Preferred Devices Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. • Small Size • Passivated Die for Reliability and Uniformity • Low Level Triggering and Holding Characteristics A SCRs 12 AMPERES RMS 600 thru 800 VOLTS • Available in Two Package Styles Surface Mount Lead Form — Case 369A Miniature Plastic Package — Straight Leads — Case 369 A G ORDERING INFORMATION • To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MCR12DSN Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, i.e. MCR12DSNT4 • To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — Add “–1” Suffix to Device Number, i.e. MCR12DSN–1 K K A G CASE 369A–13 STYLE 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Rating Peak Repetitive Off–State Voltage (1) Peak Repetitive Reverse Voltage (TJ = –40 to 110°C, RGK = 1.0 K) Value VDRM VRRM IT(RMS) IT(AV) Peak Non–Repetitive Surge Current (One Half Cycle, 60 Hz, TJ = 110°C) ITSM Peak Gate Power (Pulse Width ≤ 10 sec, TC = 75°C) Average Gate Power (t = 8.3 msec, TC = 75°C) Amps 12 Average On–State Current (All Conduction Angles; TC = 75°C) Circuit Fusing Consideration (t = 8.3 msec) Volts 600 800 MCR12DSM MCR12DSN On–State RMS Current (All Conduction Angles; TC = 75°C) Unit 7.6 100 I2t 41 PGM A2sec Watts 5.0 PG(AV) 0.5 Peak Gate Current (Pulse Width ≤ 10 sec, TC = 75°C) Operating Junction Temperature Range Storage Temperature Range IGM 2.0 Amps TJ –40 to 110 °C Tstg –40 to 150 Symbol Max Unit RJC RJA RJA 2.2 88 80 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case Thermal Resistance — Junction to Ambient Thermal Resistance — Junction to Ambient (2) TL 260 °C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 K; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. Maximum Lead Temperature for Soldering Purposes (3) (2) Surface mounted on minimum recommended pad size. (3) 1/8″ from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data Motorola, Inc. 1997 1 ELECTRICAL CHARACTERISTICS (TJ = 25°C; RGK = 1.0 KW unless otherwise noted) Symbol Characteristics Peak Reverse Gate Blocking Voltage (IGR = 10 mA) VGRM Peak Forward Blocking Current Peak Reverse Blocking Current (VAK = Rated VDRM or VRRM) (1) IDRM IRRM Min Peak Reverse Gate Blocking Current (VGR = 10 V) Peak On–State Voltage (2) (ITM = 24 A) Max 12.5 18 mA — — — — 10 500 — — 1.2 — 1.4 2.1 5.0 — 12 — 200 300 0.45 — 0.2 0.65 — — 1.0 1.5 — 0.5 — 1.0 — 6.0 10 0.5 — 1.0 — 6.0 10 Min Typ Max — 2.0 5.0 2.0 10 — IRGM VTM Gate Trigger Current (Continuous dc) (3) (VD = 12 V, RL = 100 W, TJ = 25°C) (VD = 12 V, RL = 100 W, TJ = –40°C) IGT Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W, TJ = 25°C) (VD = 12 V, RL = 100 W, TJ = –40°C) (VD = 12 V, RL = 100 W, TJ = 110°C) VGT Holding Current (VD = 12 V, I(init) = 200 mA, TJ = 25°C) (VD = 12 V, I(init) = 200 mA, TJ = –40°C) IH Latching Current (VD = 12 V, IG = 2.0 mA, TJ = 25°C) (VD = 12 V, IG = 2.0 mA, TJ = –40°C) IL Unit Volts 10 TJ = 25°C TJ = 110°C Typ mA Volts mA Volts mA mA DYNAMIC CHARACTERISTICS Characteristics Total Turn–On Time (Source Voltage = 12 V, RS = 6.0 KW, IT = 16 A(pk), RGK = 1.0 KW) (VD = Rated VDRM, Rise Time = 20 ns, Pulse Width = 10 ms) Critical Rate of Rise of Off–State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, RGK = 1.0 KW, TJ = 110°C) Symbol tgt dv/dt Unit ms V/ms (1) Ratings apply for negative gate voltage or RGK = 1.0 KW. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. (2) Pulse Test; Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%. (3) Does not include RGK current. 2 Motorola Thyristor Device Data P(AV) , AVERAGE POWER DISSIPATION (WATTS) 110 105 100 95 90 dc 85 a 80 180° a = Conduction 75 a = 30° Angle 70 0 1.0 2.0 3.0 4.0 60° 120° 90° 5.0 6.0 7.0 180° 120° 14 90° a 12 60° a = Conduction 10 dc Angle 8.0 a = 30° 6.0 4.0 2.0 0 1.0 0 2.0 3.0 4.0 7.0 6.0 5.0 IT(AV), AVERAGE ON–STATE CURRENT (AMPS) IT(AV), AVERAGE ON–STATE CURRENT (AMPS) Figure 1. Average Current Derating Figure 2. On–State Power Dissipation 100 8.0 1.0 TYPICAL @ TJ = 25°C MAXIMUM @ TJ = 110°C 10 MAXIMUM @ TJ = 25°C 1.0 0.1 0.1 ZqJC(t) = RqJC(t)Sr(t) 0.01 1.0 0 4.0 3.0 2.0 0.1 5.0 1.0 10 100 1000 10 K VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On–State Characteristics Figure 4. Transient Thermal Response 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) 1000 I GT, GATE TRIGGER CURRENT (m A) 16 8.0 r(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) I T, INSTANTANEOUS ON–STATE CURRENT (AMPS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) RGK = 1.0 KW 100 GATE OPEN 10 1.0 –40 –25 0.1 –10 5.0 20 35 50 65 80 95 110 –40 –25 –10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Motorola Thyristor Device Data 110 3 10 10 RGK = 1.0 KW IL, LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) RGK = 1.0 KW 1.0 0.1 –40 –25 –10 5.0 20 35 50 65 80 95 1.0 0.1 –40 –25 110 –10 5.0 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature 10 110 1000 8.0 6.0 STATIC dv/dt (V/m s) IH, HOLDING CURRENT (mA) TJ = 25°C IGT = 25 mA 4.0 70°C 100 90°C TJ = 110°C 10 IGT = 10 mA 2.0 0 1.0 100 1000 10 K 100 1000 RGK, GATE–CATHODE RESISTANCE (OHMS) RGK, GATE–CATHODE RESISTANCE (OHMS) Figure 9. Holding Current versus Gate–Cathode Resistance Figure 10. Exponential Static dv/dt versus Gate–Cathode Resistance and Junction Temperature 1000 1000 TJ = 110°C VD = 800 V TJ = 110°C 100 STATIC dv/dt (V/ ms) STATIC dv/dt (V/ ms) 400 V 600 V VPK = 800 V 10 1.0 IGT = 10 mA 10 1.0 100 4 IGT = 25 mA 100 1000 1000 100 RGK, GATE–CATHODE RESISTANCE (OHMS) RGK, GATE–CATHODE RESISTANCE (OHMS) Figure 11. Exponential Static dv/dt versus Gate–Cathode Resistance and Peak Voltage Figure 12. Exponential Static dv/dt versus Gate–Cathode Resistance and Gate Trigger Current Sensitivity Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– C B V E R 4 Z A S 1 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE 3 U K F J L H D 2 PL G 0.13 (0.005) M DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– T STYLE 4: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE CASE 369A–13 ISSUE Y Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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