Order this document by MCR225FP/D SEMICONDUCTOR TECHNICAL DATA Reverse Blocking Thyristors . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. ISOLATED SCRs 25 AMPERES RMS 50 thru 800 VOLTS • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts • 300 A Surge Current Capability • Insulated Package Simplifies Mounting G A CASE 221C-02 STYLE 2 K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Symbol Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = –40 to +125°C, Gate Open) MCR225-2FP MCR225-4FP MCR225-6FP MCR225-8FP MCR225-10FP On-State RMS Current (TC = +70°C) Full Cycle Sine Wave 50 to 60 Hz(2) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +70°C) Preceded and followed by rated current Circuit Fusing (t = 8.3 ms) Peak Gate Power (TC = +70°C, Pulse Width = 10 µs) Average Gate Power (TC = +70°C, t = 8.3 ms) Peak Gate Current (TC = +70°C, Pulse Width = 10 µs) RMS Isolation Voltage (TA = 25°C, Relative Humidity Operating Junction Temperature Range Storage Temperature Range p 20%) Value VDRM VRRM Unit Volts 50 200 400 600 800 IT(RMS) 25 Amps ITSM 300 Amps I2t 375 A2s PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps V(ISO) 1500 Volts TJ –40 to +125 °C Tstg –40 to +125 °C 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic body. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 1.5 °C/W Thermal Resistance, Case to Sink RθCS 2.2 (typ) °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit — — — — 10 2 µA mA IRRM — — 2 mA VTM — — 1.8 Volts Gate Trigger Current (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms) IGT — — 40 mA Gate Trigger Voltage (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms) VGT — 0.8 1.5 Volts Gate Non-Trigger Voltage (Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C) VGD 0.2 — — Volts Holding Current (Anode Voltage = 12 Vdc) IH — 20 40 mA Turn-On Time (ITM = 25 A, IGT = 40 mAdc) tgt — 1.5 — µs Turn-Off Time (VDRM = Rated Voltage) (ITM = 25 A, IR = 25 A) (ITM = 25 A, IR = 25 A, TJ = 125°C) tq — — 15 35 — — — 100 — Peak Forward Blocking Current (VD = Rated VDRM, Gate Open) IDRM TJ = 25°C TJ = 125°C Peak Reverse Blocking Current (VR = Rated VRRM) Forward “On” Voltage(1) (ITM = 50 A) TJ = 125°C Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) 1. Pulse Test: Pulse Width = 1 ms, Duty Cycle µs dv/dt V/µs p 2%. TYPICAL CHARACTERISTICS 32 120 α α = CONDUCTION ANGLE 110 100 α = 30° 90 60° 90° 180° dc 12 16 80 180° α 24 α = CONDUCTION ANGLE 60° dc 90° α = 30° 16 TJ = 125°C 8 0 0 4 8 IT(AV), ON-STATE FORWARD CURRENT (AMPS) Figure 1. Average Current Derating 2 P(AV) , AVERAGE POWER (WATTS) TC, MAXIMUM CASE TEMPERATURE (° C) 130 20 0 4 8 12 16 20 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) Figure 2. Maximum On-State Power Dissipation Motorola Thyristor Device Data 100 I TSM , PEAK SURGE CURRENT (AMP) 300 70 50 30 125°C i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 20 25°C 10 7 1 CYCLE 275 250 225 TC = 85°C f = 60 Hz 200 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 175 1 5 2 3 4 6 8 10 NUMBER OF CYCLES 3 Figure 4. Maximum Non-Repetitive Surge Current 2 +I 1 0.7 0.5 REVERSE BLOCKING REGION 0.3 –V 0.2 0.4 0 0.8 1.2 1.6 2 vF, INSTANTANEOUS VOLTAGE (VOLTS) 2.4 2.8 REVERSE AVALANCHE REGION Figure 3. Maximum Forward Voltage FORWARD BREAKOVER POINT VT IH IDRM IRRM VRRM 0.1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) IT –I VDRM FORWARD BLOCKING REGION +V Figure 5. Characteristics and Symbols 1 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k Figure 6. Thermal Response Motorola Thyristor Device Data 3 VGT , GATE TRIGGER VOLTAGE (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) 2 VD = 12 V 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 80 100 120 140 2 VD = 12 V 1.6 1.2 0.8 0.4 0 –60 –40 –20 TJ, JUNCTION TEMPERATURE (°C) 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Gate Trigger Current versus Temperature Figure 8. Gate Trigger Voltage versus Temperature IH , HOLDING CURRENT (NORMALIZED) 2 VD = 12 V 1.6 1.2 0.8 0.4 0 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Figure 9. Holding Current versus Temperature 4 Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– –B– F SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD DIMENSIONS UNCONTROLLED WITHIN DIMENSION Z. C S P N E A Q H 1 2 3 STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE –Y– K Z J L G R D 3 PL 0.25 (0.010) M B M Y DIM A B C D E F G H J K L N P Q R S Z INCHES MIN MAX 0.680 0.700 0.388 0.408 0.175 0.195 0.025 0.040 0.340 0.355 0.140 0.150 0.100 BSC 0.110 0.155 0.018 0.028 0.500 0.550 0.045 0.070 0.049 ––– 0.270 0.290 0.480 0.500 0.090 0.120 0.105 0.115 0.070 0.090 MILLIMETERS MIN MAX 17.28 17.78 9.86 10.36 4.45 4.95 0.64 1.01 8.64 9.01 3.56 3.81 2.54 BSC 2.80 3.93 0.46 0.71 12.70 13.97 1.15 1.77 1.25 ––– 6.86 7.36 12.20 12.70 2.29 3.04 2.67 2.92 1.78 2.28 CASE 221C-02 Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 6 ◊ Motorola Thyristor Device Data *MCR225FP/D* MCR225FP/D