ON Semiconductor PNP High-Current Complementary Silicon Power Transistors 2N5684 NPN 2N5686 . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability – • • IC Continuous = 50 Amperes. DC Current Gain – hFE = 15–60 @ IC = 25 Adc Low Collector–Emitter Saturation Voltage – VCE(sat) = 1.0 Vdc (Max) @ IC = 25 Adc 50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60–80 VOLTS 300 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Collector–Emitter Voltage Symbol 2N5684 2N5686 Unit VCEO 80 Vdc Collector–Base Voltage VCB 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc Collector Current – Continuous IC 50 Adc Base Current IB 15 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 300 1.715 Watts W/C TJ, Tstg –65 to +200 C Operating and Storage Junction Temperature Range CASE 197A–05 TO–204AE THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance, Junction to Case Symbol Max Unit θJC 0.584 C/W (1) Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 TEMPERATURE (°C) 160 180 200 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All limits are applicable and must be observed. Semiconductor Components Industries, LLC, 2001 May, 2001 – Rev. 10 1 Publication Order Number: 2N5684/D 2N5684 2N5686 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 80 – – 1.0 – – 2.0 10 – 2.0 – 5.0 15 5.0 60 – – – 1.0 5.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (Note 2) (IC = 0.2 Adc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) ICEO Collector Cutoff Current (VCE = 80 Vdc, VEB(off) = 1.5 Vdc) (VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150C) ICEX Collector Cutoff Current (VCB = 80 Vdc, IE = 0) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc mAdc mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 2) (IC = 25 Adc, VCE = 2.0 Vdc) (IC = 50 Adc, VCE = 5.0 Vdc) hFE – Collector–Emitter Saturation Voltage (Note 2) (IC = 25 Adc, IB = 2.5 Adc) (IC = 50 Adc, IB = 10 Adc) VCE(sat) Vdc Base–Emitter Saturation Voltage (Note 1) (IC = 25 Adc, IB = 2.5 Adc) VBE(sat) – 2.0 Vdc Base–Emitter On Voltage (Note 1) (IC = 25 Adc, VCE = 2.0 Vdc) VBE(on) – 2.0 Vdc DYNAMIC CHARACTERISTICS Current–Gain – Bandwidth Product (IC = 5.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5684 2N5686 Small–Signal Current Gain (IC = 10 Adc, VCE = 5.0 Vdc, f = 1.0 kHz) fT 2.0 – MHz Cob – – 2000 1200 pF hfe 15 – *Indicates JEDEC Registered Data. Note 2: Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%. VCC -30 V RL +2.0 V 0 TO SCOPE tr ≤ 20 ns RB 1.0 0.7 0.5 -12V tr ≤ 20ns 0.3 DUTY CYCLE ≈ 2.0% VCC TO SCOPE tr ≤ 20 ns RB tr ≤ 20ns 10 to 100 µs -30 V RL +10V -12V t, TIME (s) µ 10 to 100 µs 0 tr VBB 0.2 td 0.1 0.07 0.05 0.03 0.02 TJ = 25°C IC/IB = 10 VCC = 30 V 0.01 0.5 0.7 1.0 +4.0 V DUTY CYCLE ≈ 2.0% FOR CURVES OF FIGURES 3 & 6, RB & RL ARE VARIED. INPUT LEVELS ARE APPROXIMATELY AS SHOWN. FOR NPN CIRCUITS, REVERSE ALL POLARITIES. 2N5684 (PNP) 2N5686 (NPN) 20 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn–On Time Figure 2. Switching Time Test Circuit http://onsemi.com 2 30 50 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5684 2N5686 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.07 0.05 P(pk) θJC(t) = r(t) θJC θJC = 0.584°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.1 0.05 0.02 0.03 0.02 SINGLE PULSE 0.01 0.02 0.05 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 100 20 10 5.0 2.0 1.0 0.5 dc 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 1.0 ms TJ = 200°C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) CURVES APPLY BELOW RATED VCEO 0.2 0.1 1.0 100 µs 500 µs 50 The data of Figure 5 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 2N5684, 2N5686 2.0 3.0 20 30 50 70 100 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active–Region Safe Operating Area 2N5684 (PNP) 2N5686 (NPN) 3.0 t, TIME (s) µ 2.0 ts 5000 TJ = 25°C IB1 = IB2 IC/IB = 10 VCE = 30 V TJ = 25°C 3000 C, CAPACITANCE (pF) 4.0 2000 1.0 0.8 0.6 0.4 tf 700 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 500 0.1 50 Figure 6. Turn–Off Time Cob Cib 1000 0.3 0.2 0.5 0.7 1.0 Cib 2N5684 (PNP) 2N5686 (NPN) 0.2 Cob 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 3 50 100 2N5684 2N5686 PNP 2N5684 500 500 TJ = +150°C 300 200 +25°C 100 70 30 20 10 7.0 5.0 0.5 0.7 1.0 +25°C 100 70 -55°C 50 VCE = 2.0 V VCE = 10 V TJ = +150°C 300 200 VCE = 2.0 V VCE = 10 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN NPN 2N5686 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 -55°C 30 20 10 7.0 5.0 0.5 0.7 1.0 50 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (AMP) 30 50 Figure 8. DC Current Gain 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25°C IC = 10 A 40 A 25 A IC = 10 A 25 A 40 A 1.2 1.2 0.8 0.8 0.4 0.4 0 TJ = 25°C 1.6 1.6 0.1 0.5 1.0 2.0 3.0 IB, BASE CURRENT (AMP) 0.2 5.0 10 0 0.2 0.3 0.1 0.5 1.0 2.0 3.0 IB, BASE CURRENT (AMP) 5.0 10 20 30 50 Figure 9. Collector Saturation Region 2.5 2.0 TJ = 25°C TJ = 25°C 1.6 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.0 1.5 1.0 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.5 0 0.5 0.7 2.0 3.0 0.8 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 1.0 1.2 5.0 7.0 10 20 30 0 0.5 0.7 50 IC, COLLECTOR CURRENT (AMP) 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 4 2N5684 2N5686 PACKAGE DIMENSIONS CASE 197A–05 TO–204AE ISSUE J A N C –T– E D K 2 PL 0.30 (0.012) U V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE T Q M M Y M –Y– L 2 H G B M T Y 1 –Q– 0.25 (0.010) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N5684 2N5686 Notes http://onsemi.com 6 2N5684 2N5686 Notes http://onsemi.com 7 2N5684 2N5686 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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