ON Semiconductor 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage — • • • • 25 AMPERE POWER TRANSISTORS PNP SILICON 100, 120 VOLTS 200 WATTS VCEO(sus) = 100 Vdc (Min) — 2N6437 = 120 Vdc (Min) — 2N6438 High DC Current Gain — hFE = 20–80 @IC = 10 Adc = 12 (Min) @ IC = 25 Adc Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ts = 1.0 µs (Max) tf = 0.25 µs (Max) Complement to NPN 2N6339 thru 2N6341 CASE 1–07 TO–204AA (TO–3) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Rating Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous Peak Symbol 2N6437 2N6438 Unit VCB 120 140 Vdc VCEO 100 120 Vdc VEB 6.0 Vdc IC 25 50 Adc Base Current IB 10 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 200 1.14 Watts W/C TJ,Tstg –65 to +200 C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.875 C/W (1) Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2001 – Rev. 2 1 Publication Order Number: 2N6437/D 2N6437 2N6438 PD, POWER DISSIPATION (WATTS) 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 175 200 2N6437 2N6438 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ *ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit 100 120 — — — — 50 50 — — — — 10 10 1.0 1.0 — — 10 10 — 100 30 20 12 — 120 — — — 1.0 1.8 — — 1.8 2.5 fT 40 — MHz Cob — 700 pF Rise Time (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = 1.0 Adc) tr — 0.3 µs Storage (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc) ts — 1.0 µs Fall Time (VCC = 80 Vdc, IC = 10 A,VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc) tf — 0.25 µs OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (1) (IC = 50 mAdc, IB = 0) VCEO(sus) 2N6437 2N6438 Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) 2N6437 2N6438 Collector Cutoff Current (VCE = 110 Vdc, VBE(off) = –1.5 Vdc) (VCE = 130 Vdc, VBE(off) = –1.5 Vdc) (VCE = 100 Vdc, VBE(off) = –1.5 Vdc, TC = 150C) (VCE = 120 Vdc, VBE(off) = –1.5 Vdc, TC = 150C) 2N6437 2N6438 2N6437 2N6438 Collector Cutoff Current (VCB = 120 Vdc, IE = 0) (VCB = 140 Vdc, IE = 0) 2N6437 2N6438 Vdc µAdc ICEO µAdc ICEX µAdc ICBO Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) IEBO mAdc µAdc ON CHARACTERISTICS DC Current Gain (1) (IC = 0.5 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 25 Adc, VCE = 2.0 Vdc) hFE Collector–Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VCE(sat) Base–Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) VBE(sat) — Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCE = 10 Vdc, IE = 0, f = 100 kHz) SWITCHING CHARACTERISTICS *Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 µs; Duty Cycle 2.0%. 0.3 VCC 0.2 + 80 V RC 8.0 OHMS RB = 10 OHMS 0 - 11 V 10 µs tr, tf 10 ns DUTY CYCLE = 1.0% 1.0 SCOPE t, TIME (s) µ + 9.0 V td @ VBE(off) = 6.0 V MBR74 5 VCC = 80 V IC/IB = 10 TJ = 25°C 0.7 0.5 0.3 0.2 tr 0.1 0.07 0.05 - 5.0 V 0.03 NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions. 0.3 Figure 2. Switching Time Test Circuit 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 3. Turn–On Time http://onsemi.com 3 20 30 r(t) EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N6437 2N6438 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 P(pk) 0.05 ZθJC(t) = r(t)RθJC RθJC = 0.875°C/W MAX 0.02 0.05 t1 0.03 0.01 0.02 0.01 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) ZθJC(t) 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 100 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 200C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 200 µs dc TJ = 200°C 1.0 ms 5.0 ms BONDING WIRE LIMITED THERMALLY LIMITED TC = 25°C(SINGLE PULSE) PULSE DUTY CYCLE 10% SECOND BREAKDOWN LIM ITED CURVES APPLY 0.02 BELOW RATED VCEO 0.01 2.0 3.0 5.0 7.0 10 20 30 2N6437 2N6438 50 70 100 200 VCE, COLLECTOREMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area ts t, TIME (s) µ 1.0 0.7 0.5 tf 4000 3000 VCC = 80 V IB1 = IB2 IC/IB = 10 TJ = 25°C 0.3 0.2 0.1 0.07 0.05 0.03 0.3 Cib 2000 CAPACITANCE (pF) 3.0 2.0 TJ = 25°C Cob 1000 700 500 300 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 200 0.1 30 Figure 6. Turn-Off Time 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 4 50 100 2N6437 2N6438 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 hFE, DC CURRENT GAIN TJ = 150°C 100 + 25°C 70 50 -55°C 30 20 10 VCE = 2.0 V VCE = 4.0 V 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 2.0 1.6 θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C 1.4 1.2 0.6 0.4 0.2 0 0.3 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V VCE(sat) @ IC/IB = 10 0.5 0.7 2.0 3.0 5.0 7.0 10 20 30 1.2 1.0 0.8 0.6 0.4 0.2 0 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 +2.5 +2.0 +1.5 +1.0 +0.5 hFE@VCE 2.0V 2 *APPLIES FOR IC/IB +25°C to +150°C *θVC FOR VCE(sat) 0 -55°C to +25°C -0.5 -1.0 -1.5 +25°C to +150°C θVB FOR VBE -2.0 -2.5 0.3 -55°C to + 25°C 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages Figure 11. Temperature Coefficients TJ = +150°C +100°C 100 10-1 VCE = 40 V +25°C REVERSE FORWARD 100 20 30 10-1 VCE = 40 V TJ = +150°C +100°C 10-2 10-3 +25°C REVERSE 10-3 +0.2 20 A IC, COLLECTOR CURRENT (AMP) 101 10-2 10 A 101 102 IC, COLLECTOR CURRENT (A) µ 1.0 IB , BASE CURRENT (A) µ V, VOLTAGE (VOLTS) 1.6 0.8 5.0 A Figure 9. Collector Saturation Region 2.0 1.0 IC = 2.0 A 1.4 Figure 8. DC Current Gain 1.8 TJ = 25°C 1.8 +0.1 0 -0.1 -0.2 -0.3 -0.4 10-4 +0.16 -0.5 +0.08 FORWARD 0 -0.08 -0.16 VBE, BASEEMITTER VOLTAGE (VOLTS) VBE, BASEEMITTER VOLTAGE (VOLTS) Figure 12. Collector Cut-Off Region Figure 13. Base Cutoff Region http://onsemi.com 5 -0.24 2N6437 2N6438 PACKAGE DIMENSIONS CASE 1–07 TO–204AA (TO–3) ISSUE Z A N C –T– E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 6 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N6437 2N6438 Notes http://onsemi.com 7 2N6437 2N6438 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6437/D