ONSEMI 2N6438

ON Semiconductor
2N6437
2N6438 *
High-Power PNP Silicon
Transistors
. . . designed for use in industrial–military power amplifier and
switching circuit applications.
*ON Semiconductor Preferred Device
• High Collector–Emitter Sustaining Voltage —
•
•
•
•
25 AMPERE
POWER TRANSISTORS
PNP SILICON
100, 120 VOLTS
200 WATTS
VCEO(sus) = 100 Vdc (Min) — 2N6437
= 120 Vdc (Min) — 2N6438
High DC Current Gain —
hFE = 20–80 @IC = 10 Adc
= 12 (Min) @ IC = 25 Adc
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc
Fast Switching Times @ IC = 10 Adc
tr = 0.3 µs (Max)
ts = 1.0 µs (Max)
tf = 0.25 µs (Max)
Complement to NPN 2N6339 thru 2N6341
CASE 1–07
TO–204AA
(TO–3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎ
MAXIMUM RATINGS (1)
Rating
Collector–Base Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current — Continuous
Peak
Symbol
2N6437
2N6438
Unit
VCB
120
140
Vdc
VCEO
100
120
Vdc
VEB
6.0
Vdc
IC
25
50
Adc
Base Current
IB
10
Adc
Total Device Dissipation @ TC = 25C
Derate above 25C
PD
200
1.14
Watts
W/C
TJ,Tstg
–65 to +200
C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
Max
Unit
RθJC
0.875
C/W
(1) Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 2
1
Publication Order Number:
2N6437/D
2N6437 2N6438
PD, POWER DISSIPATION (WATTS)
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
http://onsemi.com
2
175
200
2N6437 2N6438
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
100
120
—
—
—
—
50
50
—
—
—
—
10
10
1.0
1.0
—
—
10
10
—
100
30
20
12
—
120
—
—
—
1.0
1.8
—
—
1.8
2.5
fT
40
—
MHz
Cob
—
700
pF
Rise Time (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = 1.0 Adc)
tr
—
0.3
µs
Storage (VCC = 80 Vdc, IC = 10 A, VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc)
ts
—
1.0
µs
Fall Time (VCC = 80 Vdc, IC = 10 A,VBE(off) = 6.0 Vdc, IB1 = IB2 = 1.0 Adc)
tf
—
0.25
µs
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 50 mAdc, IB = 0)
VCEO(sus)
2N6437
2N6438
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
(VCE = 60 Vdc, IB = 0)
2N6437
2N6438
Collector Cutoff Current
(VCE = 110 Vdc, VBE(off) = –1.5 Vdc)
(VCE = 130 Vdc, VBE(off) = –1.5 Vdc)
(VCE = 100 Vdc, VBE(off) = –1.5 Vdc, TC = 150C)
(VCE = 120 Vdc, VBE(off) = –1.5 Vdc, TC = 150C)
2N6437
2N6438
2N6437
2N6438
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
(VCB = 140 Vdc, IE = 0)
2N6437
2N6438
Vdc
µAdc
ICEO
µAdc
ICEX
µAdc
ICBO
Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)
IEBO
mAdc
µAdc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = 0.5 Adc, VCE = 2.0 Vdc)
(IC = 10 Adc, VCE = 2.0 Vdc)
(IC = 25 Adc, VCE = 2.0 Vdc)
hFE
Collector–Emitter Saturation Voltage (1)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 25 Adc, IB = 2.5 Adc)
VCE(sat)
Base–Emitter Saturation Voltage (1)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 25 Adc, IB = 2.5 Adc)
VBE(sat)
—
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz)
Output Capacitance (VCE = 10 Vdc, IE = 0, f = 100 kHz)
SWITCHING CHARACTERISTICS
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs; Duty Cycle 2.0%.
0.3
VCC
0.2
+ 80 V
RC
8.0 OHMS
RB =
10 OHMS
0
- 11 V
10
µs
tr, tf 10 ns
DUTY CYCLE = 1.0%
1.0
SCOPE
t, TIME (s)
µ
+ 9.0 V
td @ VBE(off) = 6.0 V
MBR74
5
VCC = 80 V
IC/IB = 10
TJ = 25°C
0.7
0.5
0.3
0.2
tr
0.1
0.07
0.05
- 5.0 V
0.03
NOTE: For information on Figures 3 and 6, RB and RC were
varied to obtain desired test conditions.
0.3
Figure 2. Switching Time Test Circuit
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn–On Time
http://onsemi.com
3
20
30
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
2N6437 2N6438
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
P(pk)
0.05
ZθJC(t) = r(t)RθJC
RθJC = 0.875°C/W MAX
0.02
0.05
t1
0.03
0.01
0.02
0.01
0.01
t2
DUTY CYCLE, D = t1/t2
SINGLE
PULSE
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
50
100
200 300
500
1000
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
100
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 200C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
200C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
200 µs
dc
TJ = 200°C
1.0 ms
5.0 ms
BONDING WIRE LIMITED
THERMALLY LIMITED
TC = 25°C(SINGLE PULSE)
PULSE DUTY CYCLE 10%
SECOND BREAKDOWN LIM
ITED
CURVES
APPLY
0.02
BELOW RATED VCEO
0.01
2.0 3.0
5.0 7.0 10
20
30
2N6437
2N6438
50 70 100
200
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 5. Active Region Safe Operating Area
ts
t, TIME (s)
µ
1.0
0.7
0.5
tf
4000
3000
VCC = 80 V
IB1 = IB2
IC/IB = 10
TJ = 25°C
0.3
0.2
0.1
0.07
0.05
0.03
0.3
Cib
2000
CAPACITANCE (pF)
3.0
2.0
TJ = 25°C
Cob
1000
700
500
300
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
20
200
0.1
30
Figure 6. Turn-Off Time
0.2
0.5
1.0 2.0
5.0
10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
http://onsemi.com
4
50
100
2N6437 2N6438
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
200
hFE, DC CURRENT GAIN
TJ = 150°C
100
+ 25°C
70
50
-55°C
30
20
10
VCE = 2.0 V
VCE = 4.0 V
0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (AMP)
20
30
2.0
1.6
θV, TEMPERATURE COEFFICIENTS (mV/°C)
TJ = 25°C
1.4
1.2
0.6
0.4
0.2
0
0.3
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
0.5 0.7
2.0 3.0
5.0 7.0
10
20 30
1.2
1.0
0.8
0.6
0.4
0.2
0
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (AMP)
2.0
+2.5
+2.0
+1.5
+1.0
+0.5
hFE@VCE 2.0V
2
*APPLIES FOR IC/IB +25°C to +150°C
*θVC FOR VCE(sat)
0
-55°C to +25°C
-0.5
-1.0
-1.5
+25°C to +150°C
θVB FOR VBE
-2.0
-2.5
0.3
-55°C to + 25°C
0.5 0.7 1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
TJ = +150°C
+100°C
100
10-1
VCE = 40 V
+25°C
REVERSE
FORWARD
100
20 30
10-1
VCE = 40 V
TJ = +150°C
+100°C
10-2
10-3
+25°C
REVERSE
10-3
+0.2
20 A
IC, COLLECTOR CURRENT (AMP)
101
10-2
10 A
101
102
IC, COLLECTOR CURRENT (A)
µ
1.0
IB , BASE CURRENT (A)
µ
V, VOLTAGE (VOLTS)
1.6
0.8
5.0 A
Figure 9. Collector Saturation Region
2.0
1.0
IC = 2.0 A
1.4
Figure 8. DC Current Gain
1.8
TJ = 25°C
1.8
+0.1
0
-0.1
-0.2
-0.3
-0.4
10-4
+0.16
-0.5
+0.08
FORWARD
0
-0.08
-0.16
VBE, BASEEMITTER VOLTAGE (VOLTS)
VBE, BASEEMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut-Off Region
Figure 13. Base Cutoff Region
http://onsemi.com
5
-0.24
2N6437 2N6438
PACKAGE DIMENSIONS
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
A
N
C
–T–
E
D
SEATING
PLANE
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
--1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
--0.830
0.151
0.165
1.187 BSC
0.131
0.188
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
http://onsemi.com
6
MILLIMETERS
MIN
MAX
39.37 REF
--26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
--21.08
3.84
4.19
30.15 BSC
3.33
4.77
2N6437 2N6438
Notes
http://onsemi.com
7
2N6437 2N6438
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: [email protected]
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–[email protected]
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–[email protected]
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: [email protected]
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–[email protected]
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–[email protected]
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: [email protected]
ON Semiconductor Website: http://onsemi.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
For additional information, please contact your local
Sales Representative.
http://onsemi.com
8
2N6437/D