ON Semiconductor PNP 2N6035 Plastic Darlington Complementary Silicon Power Transistors 2N6036* NPN 2N6038 . . . designed for general–purpose amplifier and low–speed switching applications. 2N6039 * • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc • • • *ON Semiconductor Preferred Device VCEO(sus) = 60 Vdc (Min) — 2N6035, 2N6038 = 80 Vdc (Min) — 2N6036, 2N6039 Forward Biased Second Breakdown Current Capability IS/b = 1.5 Adc @ 25 Vdc Monolithic Construction with Built–In Base–Emitter Resistors to LimitELeakage Multiplication Space–Saving High Performance–to–Cost Ratio TO–225AA Plastic Package DARLINGTON 4–AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 80 VOLTS 40 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS (1) Symbol 2N6035 2N6038 2N6036 2N6039 Unit VCEO 60 80 Vdc Collector–Base Voltage VCB 60 80 Vdc Emitter–Base Voltage VEB 5.0 Vdc IC 4.0 8.0 Adc Base Current IB 100 mAdc Total Power Dissipation @ TC = 25C Derate above 25C PD 40 0.32 Watts W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 1.5 0.012 Watts TJ, Tstg –65 to +150 C Rating Collector–Emitter Voltage Collector Current — Continuous Peak Operating and Storage Junction Temperature Range CASE 77–09 TO–225AA TYPE THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic θJC 3.12 C/W Thermal Resistance, Junction to Ambient θJA 83.3 C/W (1) Indicates JEDEC Registered Data. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 9 1 Publication Order Number: 2N6035/D 2N6035 2N6036 2N6038 2N6039 PD, POWER DISSIPATION (WATTS) TA TC 4.0 40 3.0 30 TC 2.0 20 1.0 10 0 0 TA 0 20 40 60 80 100 T, TEMPERATURE (°C) 120 Figure 1. Power Derating http://onsemi.com 2 140 160 2N6035 2N6036 2N6038 2N6039 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max 60 80 — — — — 100 100 — — — — 100 100 500 500 — — 0.5 0.5 — 2.0 500 750 100 — 15,000 — — — 2.0 3.0 Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) VCEO(sus) 2N6035, 2N6038 2N6036, 2N6039 Collector–Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N6035, 2N6038 2N6036, 2N6039 Collector–Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125C) 2N6035, 2N6038 2N6036, 2N6039 2N6035, 2N6038 2N6036, 2N6039 Collector–Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N6035, 2N6038 2N6036, 2N6039 Vdc µA ICEO µA ICEX ICBO Emitter–Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 0.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) (IC = 4.0 Adc, VCE = 3.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 2.0 Adc, IB = 8.0 mAdc) (IC = 4.0 Adc, IB = 40 mAdc) VCE(sat) Vdc Base–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 40 mAdc) VBE(sat) — 4.0 Vdc Base–Emitter On Voltage (IC = 2.0 Adc, VCE = 3.0 Vdc) VBE(on) — 2.8 Vdc Small–Signal Current–Gain (IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz) |hfe| 25 — — Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob — — 200 100 DYNAMIC CHARACTERISTICS 2N6035, 2N6036 2N6038, 2N6039 *Indicates JEDEC Registered Data. http://onsemi.com 3 pF 2N6035 2N6036 2N6038 2N6039 RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA t, TIME (s) µ D1 51 V1 approx -12 V ≈ 8.0 k ≈ 60 +4.0 V 25 µs tf 1.0 0.8 tr 0.6 0.4 for td and tr, D1 is disconnected and V2 = 0, RB and RC are varied to obtain desired test currents. tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.2 0.04 0.06 For NPN test circuit, reverse diode, polarities and input pulses. 0.1 r(t), TRANSIENT THERMAL RESISTANCE, NORMALIZED 2.0 4.0 Figure 3. Switching Times 0.2 0.2 0.1 P(pk) θJC(t) = r(t) θJC θJC = 3.12°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.05 0.1 0.07 0.05 0.02 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) D = 0.5 0.3 0.03 td @ VBE(off) = 0 PNP NPN Figure 2. Switching Times Test Circuit 1.0 0.7 0.5 IB1 = IB2 TJ = 25°C SCOPE RB 0 VCC = 30 V IC/IB = 250 ts 2.0 RC TUT V2 approx +8.0 V 4.0 VCC -30 V 0.02 SINGLE PULSE 0.01 0.01 0.02 0.03 0.01 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 Figure 4. Thermal Response http://onsemi.com 4 20 30 50 100 200 300 500 1000 2N6035 2N6036 2N6038 2N6039 ACTIVE–REGION SAFE–OPERATING AREA IC, COLLECTOR CURRENT (AMP) 5.0ms 3.0 2.0 1.0ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 0.3 0.2 7.0 dc 0.3 0.2 70 20 10 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 0.1 5.0 100 1.0ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED 1.0 0.7 0.5 2N6036 2N6035 100 µs 5.0ms 3.0 2.0 dc 1.0 0.7 0.5 0.1 5.0 1.0 7.0 5.0 100 µs IC, COLLECTOR CURRENT (AMP) 1.0 7.0 5.0 2N6039 2N6038 7.0 20 10 30 50 70 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. 2N6035, 2N6036 100 Figure 6. 2N6038, 2N6039 200 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 5 and 6 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150C. TJ(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TC = 25°C C, CAPACITANCE (pF) 100 70 50 Cob 30 Cib 20 10 0.04 0.06 0.1 PNP NPN 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance http://onsemi.com 5 20 40 2N6035 2N6036 2N6038 2N6039 PNP 2N6035, 2N6036 NPN 2N6038, 2N6039 6.0 k 6.0 k 4.0 k 3.0 k 25°C 2.0 k -55°C 1.0 k 800 600 400 300 0.04 0.06 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 3.0 k 25°C 2.0 k -55°C 1.0 k 800 600 400 300 0.04 0.06 4.0 2.0 VCE = 3.0 V TJ = 125°C 4.0 k hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN VCE = 3.0 V TC = 125°C 0.1 0.2 1.0 0.4 0.6 IC, COLLECTOR CURRENT (AMP) 2.0 4.0 3.4 TJ = 25°C 3.0 2.6 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain IC = 0.5 A 1.0 A 2.2 2.0 A 4.0 A 1.8 1.4 1.0 0.6 0.1 0.2 0.5 1.0 2.0 5.0 10 IB, BASE CURRENT (mA) 20 50 100 3.4 3.0 2.6 IC = 0.5 A TJ = 25°C 1.0 A 4.0 A 2.0 A 2.2 1.8 1.4 1.0 0.6 0.1 0.2 0.5 5.0 1.0 2.0 10 IB, BASE CURRENT (mA) 20 50 100 Figure 9. Collector Saturation Region 2.2 2.2 TJ = 25°C TJ = 25°C 1.4 1.8 VBE(sat) @ IC/IB = 250 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.8 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.2 0.04 0.06 1.4 VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V 1.0 VCE(sat) @ IC/IB = 250 0.6 0.1 0.2 0.4 0.6 1.0 0.2 0.04 0.06 2.0 4.0 0.1 0.2 0.4 0.6 1.0 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 10. “On” Voltages http://onsemi.com 6 2.0 4.0 2N6035 2N6036 2N6038 2N6039 PACKAGE DIMENSIONS TO–225AA CASE 77–09 ISSUE W –B– U F Q –A– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M http://onsemi.com 7 DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 --- 2N6035 2N6036 2N6038 2N6039 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET) Email: ONlit–[email protected] French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET) Email: ONlit–[email protected] English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT) Email: [email protected] CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–[email protected] Toll–Free from Mexico: Dial 01–800–288–2872 for Access – then Dial 866–297–9322 ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–[email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, UK, Ireland For additional information, please contact your local Sales Representative. http://onsemi.com 8 2N6035/D