ON Semiconductor 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device • Forward Biased Second Breakdown Current Capability 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ IS/b = 3.75 Adc @ VCE = 40 Vdc — 2N3771 = 2.5 Adc @ VCE = 60 Vdc — 2N3772 *MAXIMUM RATINGS Rating Symbol 2N3771 2N3772 Unit Collector–Emitter Voltage VCEO 40 60 Vdc Collector–Emitter Voltage VCEX 50 80 Vdc Collector–Base Voltage VCB 50 100 Vdc Emitter–Base Voltage VEB 5.0 7.0 Vdc Collector Current — Continuous Peak IC 30 30 20 30 Adc Base Current — Continuous Peak IB 7.5 15 5.0 15 Adc Total Device Dissipation @ TC = 25C Derate above 25C PD 150 0.855 Watts W/C TJ, Tstg –65 to +200 C Symbol 2N3771, 2N3772 Unit θJC 1.17 C/W Operating and Storage Junction Temperature Range CASE 1–07 TO–204AA (TO–3) THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. 200 PD, POWER DISSIPATION (WATTS) 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1. Power Derating Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 9 1 Publication Order Number: 2N3771/D 2N3771 2N3772 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS *Collector–Emitter Sustaining Voltage (1) (IC = 0.2 Adc, IB = 0) 2N3771 2N3772 VCEO(sus) 40 60 — — Vdc Collector–Emitter Sustaining Voltage (IC = 0.2 Adc, VEB(off) = 1.5 Vdc, RBE = 100 Ohms) 2N3771 2N3772 VCEX(sus) 50 80 — — Vdc Collector–Emitter Sustaining Voltage (IC = 0.2 Adc, RBE = 100 Ohms) 2N3771 2N3772 VCER(sus) 45 70 — — Vdc *Collector Cutoff Current (VCE = 30 Vdc, IB = 0) (VCE = 50 Vdc, IB = 0) (VCE = 25 Vdc, IB = 0) 2N3771 2N3772 — — 10 10 — — — — — 2.0 5.0 4.0 10 10 — — 2.0 5.0 — — 5.0 5.0 2N3771 2N3772 15 15 60 60 2N3771 2N3772 5.0 5.0 — — — — — — 2.0 1.4 4.0 4.0 — — 2.7 2.2 ICEO *Collector Cutoff Current (VCE = 50 Vdc, VEB(off) = 1.5 Vdc) (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) (VCE = 45 Vdc, VEB(off) = 1.5 Vdc) (VCE = 30 Vdc, VEB(off) = 1.5 Vdc, TC = 150C) mAdc ICEV 2N3771 2N3772 2N6257 2N3771 2N3772 mAdc (VCE = 45 Vdc, VEB(off) = 1.5 Vdc, TC = 150C) *Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0) 2N3771 2N3772 ICBO *Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) (VBE = 7.0 Vdc, IC = 0) 2N3771 2N3772 mAdc IEBO mAdc *ON CHARACTERISTICS DC Current Gain (1) (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) (IC = 30 Adc, VCE = 4.0 Vdc) (IC = 20 Adc, VCE = 4.0 Vdc) hFE Collector–Emitter Saturation Voltage (IC = 15 Adc, IB = 1.5 Adc) (IC = 10 Adc, IB = 1.0 Adc) (IC = 30 Adc, IB = 6.0 Adc) (IC = 20 Adc, IB = 4.0 Adc) — VCE(sat) 2N3771 2N3772 2N3771 2N3772 Base–Emitter On Voltage (IC = 15 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) (IC = 8.0 Adc, VCE = 4.0 Vdc) Vdc VBE(on) 2N3771 2N3772 Vdc *DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 50 kHz) fT 0.2 — MHz Small–Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 40 — — 3.75 2.5 — — SECOND BREAKDOWN Second Breakdown Energy with Base Forward Biased, t = 1.0 s (non–repetitive) (VCE = 40 Vdc) 2N3771 2N3772 (VCE = 60 Vdc) *Indicates JEDEC Registered Data. (1) Pulse Test: 300 µs, Rep. Rate 60 cps. http://onsemi.com 2 IS/b Adc r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N3771 2N3772 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.02 0.03 0.02 P(pk) θJC(t) = r(t) θJC θJC = 0.875°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) θJC(t) DUTY CYCLE, D = t1/t2 0.05 SINGLE PULSE 0.01 0.02 0.05 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 2. Thermal Response — 2N3771, 2N3772 40 IC, COLLECTOR CURRENT (AMP) 30 40 µs 2N3771 20 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation: i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Figure 3 is based on JEDEC registered Data. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 200C. TJ(pk) may be calculated from the data of Figure 2. Using data of Figure 2 and the pulse power limits of Figure 3, TJ(pk) will be found to be less than TJ(max) for pulse widths of 1 ms and less. When using ON Semiconductor transistors, it is permissible to increase the pulse power limits until limited by T J(max). 2N3772, (dc) 100 µs dc 200 µs TC = 25°C 1.0 ms BONDING WIRE LIMITED 7.0 THERMALLY LIMITED 5.0 (SINGLE PULSE) 100 ms SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 3.0 PULSE CURVES APPLY 500 ms 2N3771 FOR ALL DEVICES 2N3772 2.0 2.0 3.0 5.0 7.0 10 50 70 100 1.0 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 Figure 3. Active–Region Safe Operating Area — 2N3771, 2N3772 VCC +30 V 10 5.0 25 µs RC SCOPE RB 0 D1 51 -9.0 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% VBE(off) = 5.0 V 1.0 t, TIME (s) µ +11 V 2.0 VCC = 30 IC/IB = 10 TJ = 25°C tr 0.5 0.2 0.1 -4 V td 0.05 RB AND RC ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS 0.02 D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 0.01 0.3 Figure 4. Switching Time Test Circuit 3.0 0.5 0.7 1.0 2.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) Figure 5. Turn–On Time http://onsemi.com 3 20 30 2N3771 2N3772 100 2000 20 t, TIME (s) µ 10 C, CAPACITANCE (pF) VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 50 5.0 2.0 ts 1.0 0.5 tf 1000 Cib 700 Cob 500 300 0.2 0.1 0.3 TJ = 25°C 0.5 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 20 200 0.1 30 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 0.2 Figure 6. Turn–Off Time hFE , DC CURRENT GAIN VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 150°C VCE = 4.0 V 25°C 100 70 50 -55°C 30 20 10 7.0 5.0 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (AMP) 100 Figure 7. Capacitance 500 300 200 50 20 30 2.0 1.6 TJ = 25°C IC = 2.0 A 5.0 A 10 A 20 A 1.2 0.8 0.4 0 0.01 0.02 0.5 1.0 2.0 0.05 0.1 0.2 IC, COLLECTOR CURRENT (AMP) 5.0 Figure 9. Collector Saturation Region Figure 8. DC Current Gain http://onsemi.com 4 10 2N3771 2N3772 PACKAGE DIMENSIONS CASE 1–07 TO–204AA (TO–3) ISSUE Z A N C –T– E D SEATING PLANE K 2 PL 0.13 (0.005) U T Q M M Y M –Y– L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 2 H G B M T Y 1 –Q– 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 5 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77 2N3771 2N3772 Notes http://onsemi.com 6 2N3771 2N3772 Notes http://onsemi.com 7 2N3771 2N3772 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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