MAC4SM, MAC4SN Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of ac loads such as appliance controls, heater controls, motor controls, and other power switching applications. • Sensitive Gate Allows Triggering by Microcontrollers and other Logic Circuits • High Immunity to dv/dt — 50 V/ms Minimum at 125_C • Commutating di/dt — 3.0 A/ms Minimum at 125_C • Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design • On-State Current Rating of 4 Amperes RMS at 100_C • High Surge Current Capability — 40 Amperes • Blocking Voltage to 800 Volts • Rugged, Economical TO220AB Package • Operational in Three Quadrants: Q1, Q2, and Q3 • Device Marking: Logo, Device Type, e.g., MAC4SM, Date Code http://onsemi.com TRIACS 4 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 G 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off–State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC4SM MAC4SN VDRM, VRRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 100°C) IT(RMS) 4.0 Amps ITSM 40 Amps I2t 6.6 A2sec Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 100°C) Average Gate Power (t = 8.3 ms, TC = 100°C) Operating Junction Temperature Range Storage Temperature Range Value Unit Volts 1 600 800 PGM 0.5 Watt PG(AV) 0.1 Watt TJ – 40 to +125 °C – 40 to +150 °C Tstg Semiconductor Components Industries, LLC, 1999 February, 2000 – Rev. 1 1 3 TO–220AB CASE 221A STYLE 4 PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device (1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2 Package Shipping MAC4SM TO220AB 50 Units/Rail MAC4SN TO220AB 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MAC4SM/D MAC4SM, MAC4SN THERMAL CHARACTERISTICS Characteristic Thermal Resistance — Junction to Case — Junction to Ambient Symbol Value Unit RθJC RθJA 2.2 62.5 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit — — — — 0.01 2.0 — 1.3 1.6 2.9 2.9 2.9 4.0 4.7 6.0 10 10 10 2.0 5.0 15 — — — 6.0 15 6.0 30 30 30 0.5 0.5 0.5 0.7 .65 0.7 1.3 1.3 1.3 (di/dt)c 3.0 4.0 — A/ms Critical Rate of Rise of Off-State Voltage (VD = 0.67 x Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dv/dt 50 150 — V/µs Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz di/dt — — 10 A/µs OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak On-State Voltage(1) (ITM = ± 6.0 A) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±200 mA) IH Latching Current (VD = 12 V, IG = 10 mA) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) IL Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 Ω) MT2(+), G(+) MT2(+), G(–) MT2(–), G(–) V mA mA mA VGT V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/µs, Gate Open, TJ = 125°C, f = 500 Hz, CL = 5.0 µF, LL = 20 mH, No Snubber) (1) Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MAC4SM, MAC4SN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM IDRM Peak Forward Blocking Current VRRM IRRM VTM IH VTM Peak Repetitive Forward Off State Voltage Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current Maximum On State Voltage off state IH Holding Current Quadrant 3 VTM MainTerminal 2 – Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF IGT – + IGT (–) MT2 (–) MT2 Quadrant III Quadrant IV (+) IGT GATE (–) IGT GATE MT1 MT1 REF REF – MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in–phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 + Voltage IDRM at VDRM MAC4SM, MAC4SN 1.0 Q3 10 VGT, GATE TRIGGER VOLTAGE (VOLTS) IGT, GATE TRIGGER CURRENT (mA) 100 Q2 Q1 0.9 0.8 0.7 0.6 Q1 0.4 0.3 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 1 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 2. Typical Gate Trigger Voltage versus Junction Temperature Figure 1. Typical Gate Trigger Current versus Junction Temperature 100 IH, HOLDING CURRENT (mA) IL , LATCHING CURRENT (mA) 100 Q2 Q1 10 Q3 10 MT2 Positive MT2 Negative 1 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) 1 – 40 – 25 – 10 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 4. Typical Holding Current versus Junction Temperature P(AV), AVERAGE POWER DISSIPATION (WATTS) Figure 3. Typical Latching Current versus Junction Temperature TC , CASE TEMPERATURE (°C) 125 120 30° 115 60° 90° 120° 110 180° 105 Q3 Q2 0.5 DC 0 0.5 1 1.5 2 2.5 3 3.5 IT(RMS), RMS ON-STATE CURRENT (AMP) 4 6 DC 5 180° 120° 4 90° 60° 3 30° 2 1 0 0 Figure 5. Typical RMS Current Derating 1 2 3 IT(RMS), RMS ON-STATE CURRENT (AMP) Figure 6. On-State Power Dissipation http://onsemi.com 4 4 IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 100 Typical @ TJ = 125°C Maximum @ TJ = 125°C 10 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MAC4SM, MAC4SN 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 Figure 8. Typical Thermal Response 0.1 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 7. Typical On-State Characteristics http://onsemi.com 5 10000 MAC4SM, MAC4SN PACKAGE DIMENSIONS TO–220AB CASE 221A–09 ISSUE Z –T– SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 STYLE 4: PIN 1. 2. 3. 4. http://onsemi.com 6 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 MAC4SM, MAC4SN Notes http://onsemi.com 7 MAC4SM, MAC4SN ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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