NSR30CM3T5G Preferred Device Dual Series Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. http://onsemi.com 30 V DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES • Extremely Fast Switching Speed • Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mA • This is a Pb−Free Device MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage VR 30 Volts Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 240 1.9 mW mW/°C Forward Current (DC) IF 200 Max mA Junction Temperature TJ 125 Max °C Storage Temperature Range Tstg −55 to +150 °C Thermal Resistance Junction−to−Ambient (Note 1) RJA 525 °C/W 1 ANODE 2 ANODE 3 CATHODE MARKING DIAGRAM 3 2 SOT−723 CASE 631AA STYLE 3 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 board with minimum mounting pad. 5C D 1 5C = Specific Device Code D = Date Code ORDERING INFORMATION Device NSR30CM3T5G Package Shipping† SOT−723 (Pb−Free) 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 1 1 Publication Order Number: NSR30CM3T5G/D NSR30CM3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Typ Max Unit V(BR)R 30 − − V Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT − 7.6 10 pF Reverse Leakage (VR = 25 V) IR − 0.5 2.0 A Forward Voltage (IF = 0.1 mA) VF − 0.22 0.24 V Forward Voltage (IF = 30 mA) VF − 0.41 0.5 V Forward Voltage (IF = 100 mA) VF − 0.52 0.8 V Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA, Figure 1) trr − − 5.0 ns Forward Voltage (IF = 1.0 mA) VF − 0.29 0.32 V Forward Voltage (IF = 10 mA) VF − 0.35 0.40 V Forward Current (DC) IF − − 200 mA Repetitive Peak Forward Current IFRM − − 300 mA Non−Repetitive Peak Forward Current (t < 1.0 s) IFSM − − 600 mA Reverse Breakdown Voltage (IR = 10 A) http://onsemi.com 2 NSR30CM3T5G 820 +10 V 2k 0.1 F IF 100 H tr tp IF T 10% 0.1 F trr T DUT 50 OUTPUT PULSE GENERATOR 50 INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 1000 TA = 150°C IR, REVERSE CURRENT (A) 85°C 10 1 50°C 1.0 25°C 0.1 0.0 −40°C −55°C 100 TA = 125°C 10 1.0 TA = 85°C 0.1 0.01 TA = 25°C 0.001 0.2 0.3 0.4 0.1 0.5 VF, FORWARD VOLTAGE (VOLTS) 0 0.6 5 15 25 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 14 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1 25°C 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Total Capacitance http://onsemi.com 3 25 30 30 NSR30CM3T5G PACKAGE DIMENSIONS SOT−723 CASE 631AA−01 ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. −X− D A b1 −Y− 3 E 1 e HE L 2 b 2X 0.08 (0.0032) X Y DIM A b b1 C D E e HE L C MILLIMETERS MIN NOM MAX 0.45 0.50 0.55 0.15 0.21 0.27 0.25 0.31 0.37 0.07 0.12 0.17 1.15 1.20 1.25 0.75 0.80 0.85 0.40 BSC 1.15 1.20 1.25 0.15 0.20 0.25 INCHES MIN NOM MAX 0.018 0.020 0.022 0.0059 0.0083 0.0106 0.010 0.012 0.015 0.0028 0.0047 0.0067 0.045 0.047 0.049 0.03 0.032 0.034 0.016 BSC 0.045 0.047 0.049 0.0059 0.0079 0.0098 STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE SOLDERING FOOTPRINT* 0.40 0.0157 0.40 0.0157 1.0 0.039 0.40 0.0157 0.40 0.0157 0.40 0.0157 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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