MGSF1N03LT1 Preferred Device Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT−23 Surface Mount Package Saves Board Space • Pb−Free Package is Available http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX 80 m @ 10 V 30 V 2.1 A 125 m @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit N−Channel Drain−to−Source Voltage VDSS 30 V D Gate−to−Source Voltage VGS ±20 V ID 2.1 A Continuous Drain Current (Note 1) Steady State TA = 25°C TA = 85°C 1.5 t ≤ 10 s TA = 25°C 2.8 Power Dissipation (Note 1) Steady State TA = 25°C PD 0.73 W Continuous Drain Current (Note 2) Steady State TA = 25°C ID 1.6 A Power Dissipation (Note 2) TA = 85°C TA = 25°C Pulsed Drain Current ESD Capability (Note 3) G S MARKING DIAGRAM/ PIN ASSIGNMENT 1.1 PD 0.42 W 3 3 Drain tp = 10 s IDM 6.0 A C = 100 pF, RS = 1500 ESD 125 V 2 SOT−23 CASE 318 STYLE 21 N3 TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS 2.1 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Symbol Max Unit Junction−to−Ambient − Steady State (Note 1) RJA 170 °C/W Junction−to−Ambient − t < 10 s (Note 1) RJA 100 Junction−to−Ambient − Steady State (Note 2) RJA 300 Operating Junction and Storage Temperature 1 M Parameter N3 M 1 Gate 2 Source = Specific Device Code = Date Code THERMAL RESISTANCE RATINGS Parameter Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in sq pad size. 2. Surface−mounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0. Semiconductor Components Industries, LLC, 2005 March, 2005 − Rev. 7 1 ORDERING INFORMATION Package Shipping† MGSF1N03LT1 SOT−23 3000/Tape & Reel MGSF1N03LT3 SOT−23 10000/Tape & Reel SOT−23 (Pb−Free) 10000/Tape & Reel Device MGSF1N03LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MGSF1N03LT1/D MGSF1N03LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)DSS 30 − − Vdc − − − − 1.0 10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Adc Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) VGS(th) 1.0 1.7 2.4 Vdc Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 1.2 Adc) (VGS = 4.5 Vdc, ID = 1.0 Adc) rDS(on) − − 0.08 0.125 0.10 0.145 ON CHARACTERISTICS (Note 1) Ohms DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 5.0 Vdc) Ciss − 140 − Output Capacitance (VDS = 5.0 Vdc) Coss − 100 − Transfer Capacitance (VDG = 5.0 Vdc) Crss − 40 − td(on) − 2.5 − tr − 1.0 − td(off) − 16 − tf − 8.0 − QT − 6000 − pC IS − − 0.6 A Pulsed Current ISM − − 0.75 Forward Voltage (Note 2) VSD − 0.8 − pF SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time Rise Time (VDD = 15 Vdc, ID = 1.0 Adc, RL = 50 ) Turn−Off Delay Time Fall Time Gate Charge (See Figure 6) ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current V 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. TYPICAL ELECTRICAL CHARACTERISTICS 2.5 VDS = 10 V I D , DRAIN CURRENT (AMPS) I D , DRAIN CURRENT (AMPS) 2.5 2 1.5 − 55°C 1 TJ = 150°C 0.5 0 VGS = 3.75 V 3.5 V 2 1.5 3.25 V 1 3.0 V 0.5 2.75 V 25°C 1 1.5 2 2.5 3 2.5 V 0 3.5 0 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 2 4 6 8 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 1. Transfer Characteristics Figure 2. On−Region Characteristics http://onsemi.com 2 10 MGSF1N03LT1 0.24 RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) RDS(on) , DRAIN−TO−SOURCE RESISTANCE (OHMS) TYPICAL ELECTRICAL CHARACTERISTICS 150°C 0.19 VGS = 4.5 V 25°C 0.14 −55°C 0.09 0.04 0 0.1 0.3 0.2 0.4 0.5 0.7 0.6 0.9 0.8 1 0.16 150°C 0.14 VGS = 10 V 0.12 0.1 25°C 0.08 −55°C 0.06 0.04 0 0.2 0.4 ID, DRAIN CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) RDS(on) , DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = 10 V ID = 2 A 1.2 VGS = 4.5 V ID = 1 A 1 0.8 0.6 0.4 0.2 0 −55 0 −25 50 25 75 100 125 10 1.2 1.4 1.6 8 2 6 4 0 150 ID = 2.0 A 2 0 1000 3000 2000 4000 5000 6000 QT, TOTAL GATE CHARGE (pC) Figure 6. Gate Charge Figure 5. On−Resistance Variation with Temperature 350 1 VGS = 0 V f = 1 MHz TJ = 25°C 300 25°C −55°C C, CAPACITANCE (pF) TJ = 150°C 0.1 0.01 250 200 150 Ciss 100 Coss 50 0.001 1.8 VDS = 24 V TJ = 25°C TJ, JUNCTION TEMPERATURE (°C) I D , DIODE CURRENT (AMPS) 1 Figure 4. On−Resistance versus Drain Current 1.8 1.4 0.8 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current 1.6 0.6 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 Crss 0 4 8 12 16 VDS, DRAIN−TO−SOURCE VOLTAGE (Volts) VSD, DIODE FORWARD VOLTAGE (VOLTS) Figure 7. Body Diode Forward Voltage Figure 8. Capacitance http://onsemi.com 3 20 MGSF1N03LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. A L 3 1 V B S 2 DIM A B C D G H J K L S V G C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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