ONSEMI NTR4503NT1

NTR4503N
Power MOSFET
30 V, 2.5 A, Single N−Channel, SOT−23
Features
Leading Planar Technology for Low Gate Charge / Fast Switching
4.5 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
Pb−Free Package is Available
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V(BR)DSS
RDS(on) TYP
Applications
• DC−DC Conversion
• Load/Power Switch for Portables
• Load/Power Switch for Computing
85 m @ 10 V
30 V
N−Channel
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
2.0
A
Continuous Drain
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
1.5
t ≤ 10 s
TA = 25°C
2.5
Power Dissipation
(Note 1)
Steady
State
TA = 25°C
PD
0.73
W
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
ID
1.5
A
Power Dissipation
(Note 2)
TA = 85°C
TA = 25°C
2.5 A
105 m @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID MAX
D
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
1.1
3
PD
0.42
W
tp = 10 s
IDM
6.0
A
C = 100 pF,
RS = 1500 ESD
125
V
TJ,
Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
2.0
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
3
Drain
1
Pulsed Drain Current
ESD Capability (Note 3)
Operating Junction and Storage Temperature
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
2
TR3
SOT−23
CASE 318
STYLE 21
TR3
M
Symbol
Max
Unit
Junction−to−Ambient − Steady State (Note 1)
RJA
170
°C/W
Junction−to−Ambient − t < 10 s (Note 1)
RJA
100
Junction−to−Ambient − Steady State (Note 2)
RJA
300
1. Surface−mounted on FR4 board using 1 in sq pad size.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0.
 Semiconductor Components Industries, LLC, 2005
March, 2005 − Rev. 3
1
1
Gate
2
Source
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NTR4503NT1
SOT−23
3000/Tape & Reel
NTR4503NT1G
SOT−23
(Pb−Free)
3000/Tape & Reel
NTR4503NT3G
SOT−23
(Pb−Free)
10000/Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter
M
•
•
•
•
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTR4503N/D
NTR4503N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
V(BR)DSS
VGS = 0 V, ID = 250 A
30
36
IDSS
VGS = 0 V, VDS = 24 V
1.0
VGS = 0 V, VDS = 24 V, TJ = 125°C
10
IGSS
VDS = 0 V, VGS = 20 V
100
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 A
1.75
3.0
V
Drain−to−Source On−Resistance
RDS(on)
( )
VGS = 10 V, ID = 2.5 A
85
110
m
VGS = 4.5 V, ID = 2.0 A
105
140
VDS = 4.5 V, ID = 2.5 A
5.3
S
135
pF
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
A
ON CHARACTERISTICS (Note 4)
Forward Transconductance
gFS
1.0
CHARGES AND CAPACITANCES
Ciss
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
52
15
VGS = 0 V, f = 1.0 MHz,
VDS = 24 V
130
250
42
75
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
13
25
Total Gate Charge
QG(TOT)
3.6
7.0
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.7
Total Gate Charge
QG(TOT)
1.9
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
VGS = 10 V, VDS = 15 V,
ID = 2.5 A
VGS = 4.5 V, VDS = 24 V,
ID = 2.5 A
pF
nC
0.3
0.6
nC
0.3
0.6
0.9
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
5.8
12
5.8
10
14
25
tf
1.6
5.0
td(on)
4.8
tr
td(off)
tr
td(off)
VGS = 10 V, VDD = 15 V,
ID = 1 A, RG = 6 VGS = 10 V, VDD = 24 V,
ID = 2.5 A, RG = 2.5 tf
ns
ns
6.7
13.6
1.8
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 2.0 A
0.85
Reverse Recovery Time
tRR
ns
QRR
VGS = 0 V, IS = 2.0 A,
dIS/dt = 100 A/s
9.2
Reverse Recovery Charge
4.0
nC
4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
1.2
V
NTR4503N
TYPICAL PERFORMANCE CURVES
10 V
6V
5V
4.5 V
4.2 V
8
4V
VDS ≥ 10 V
3.8 V
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
10
3.6 V
6
3.4 V
3.2 V
4
3V
2
2.8 V
8
4
100°C
25°C
2.6 V
0
2
1
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
4
5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
0
0.3
ID = 2.5 A
TJ = 25°C
0.25
0.2
0.15
0.1
0.05
0
3
4
6
5
7
8
9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
10
TJ = 25°C
0.11
VGS = 4.5 V
0.10
0.09
0.08
VGS = 10 V
0.07
2
3
6
5
4
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
1.8
VGS = 0 V
ID = 2.5 A
VGS = 10 V
IDSS, LEAKAGE (nA)
1.6
6
0.12
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
TJ = −55°C
0
1.4
1.2
1.0
TJ = 150°C
100
10
TJ = 100°C
0.8
0.6
−50
1
−25
0
25
50
75
100
125
150
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTR4503N
VGS = 0 V
VDS = 0 V
TJ = 25°C
C, CAPACITANCE (pF)
Ciss
VDS
QG
10
200
Crss
100
Coss
0
10
15
15
5
VGS
0
VDS
5
10
15
20
30
25
VGS
5
QGS
5
QGD
ID = 2.5 A
TJ = 25°C
0
0
0
1
2
3
QG, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
3
IS, SOURCE CURRENT (AMPS)
VDD = 24 V
ID = 2.5 A
VGS = 10 V
t, TIME (ns)
10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
300
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
td(off)
tf
10
td(on)
tr
10
2
1
0
0.3
1
1
VGS = 0 V
TJ = 25°C
100
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (OHMS)
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
1
NTR4503N
PACKAGE DIMENSIONS
SOT−23
(TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
A
L
3
1
V
B S
2
DIM
A
B
C
D
G
H
J
K
L
S
V
G
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
NTR4503N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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6
For additional information, please contact your
local Sales Representative.
NTR4503N/D