MJ21294 NPN Silicon Power Transistor With superior safe operating area performance, this power transistor is ideal for high temperature linear control circuits. Features • Exceptional Safe Operating Area • Dual Die Device with Standard 40 mil pins • Pb−Free Package is Available* http://onsemi.com 20 AMPS 250 VOLTS 350 WATTS Benefits • More Reliable Performance at Higher Powers • Designed for Higher Temperature SOA • Interchangeable with Standard Single Die TO−3 Devices MARKING DIAGRAM Applications • • • • • • Linear Power Supplies Battery Conditioning DC Motor Control Positioners DC Heating Controls High Power Audio Amplifiers TO−204AA (TO−3) CASE 1−07 MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 250 Vdc Collector−Base Voltage VCBO 400 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 400 Vdc Collector Current − Continuous Peak (Note 1) IC 20 40 Adc Base Current − Continuous IB 5.0 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 350 2.0 W W/°C TJ, Tstg − 65 to +200 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.50 °C/W Operating and Storage Junction Temperature Range MJ21294 G A YY WW MEX MJ21294G AYY WW MEX = Specific Device Code = Pb−Free Package = Assembly Site = Year = Work Week = Assembly Location ORDERING INFORMATION Device MJ21294 MJ21294G Package Shipping TO−3 100 Units / Tray TO−3 (Pb−Free) 100 Units / Tray THERMAL CHARACTERISTICS Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. (continued) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 0 1 Publication Order Number: MJ21294/D MJ21294 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit VCEO(sus) 250 − − Vdc Collector Cutoff Current (VCE = 200 Vdc, IB = 0) ICEO − − 100 mAdc Emitter Cutoff Current (VCE = 5 Vdc, IC = 0) IEBO − − 10 mAdc Collector Cutoff Current (VCE = 250 Vdc, VBE(off) = 1.5 Vdc) ICEX − 100 mAdc OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1 s (non−repetitive) IS/b Adc 6.0 − − 40 15 − − 100 − − − 1.4 − − − − 0.5 1.0 fT 4 − − MHz Cob − − 500 pF ON CHARACTERISTICS DC Current Gain (IC = 8 Adc, VCE = 5 Vdc) (IC = 16 Adc, VCE = 5 Vdc) hFE Base−Emitter On Voltage (IC = 8 Adc, VCE = 5 Vdc) VBE(on) Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) (IC = 16 Adc, IB = 3.2 Adc) VCE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2% http://onsemi.com 2 MJ21294 TYPICAL CHARACTERISTICS VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) 1000 hFE , DC CURRENT GAIN VCE = 5 V 25°C TJ = 100°C 100 −25 °C 10 0.1 1.0 10 IC COLLECTOR CURRENT (AMPS) 100 1.8 VCE = 5 V 1.6 1.4 1.2 1.0 TJ = 25°C 0.8 0.6 100°C 0.4 0.2 0.1 1.4 1.2 1.0 0.8 0.6 −25°C 100°C 0.4 0.2 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 2. Base−Emitter Voltage IC/IB = 10 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 V CE(s) , COLLECTOR−EMITTER SATURATION VOLTAGE (V) V BE(s) , BASE−EMITTER SATURATION VOLTAGE (V) Figure 1. DC Current Gain TJ = 25°C −25°C Figure 3. Base−Emitter Saturation Voltage 0.40 0.36 0.32 0.28 0.24 0.20 100°C 0.16 TJ = 25°C 0.12 0.08 0.04 −25°C 0.00 0.1 IC/IB = 10 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 4. Collector−Emitter Saturation Voltage IC, COLLECTOR CURRENT (AMPS) 100 10 ms There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 200°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 100 ms 10 DC 1.0 0.1 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 5. Active Region Safe Operating Area http://onsemi.com 3 MJ21294 PACKAGE DIMENSIONS TO−204AA (TO−3) CASE 1−07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO−204AA OUTLINE SHALL APPLY. A N C −T− E D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M −Y− L V SEATING PLANE 2 H G B M T Y 1 −Q− 0.13 (0.005) M INCHES MIN MAX 1.550 REF −−− 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC −−− 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF −−− 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC −−− 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJ21294/D