BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain: hFE min = 20 at IC = 10 A • Low VCE(sat), VCE(sat) max = 1.0 V at IC = 10 A • Very Fast Switching Times: TF max = 0.35 ms at IC = 20 A • Pb−Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit VCEO(SUS) 250 Vdc Collector−Base Voltage VCBO 300 Vdc Emitter−Base Voltage VEBO 7 Vdc Collector−Emitter Voltage (VBE = −1.5 V) VCEX 300 Vdc Collector−Emitter Voltage (RBE = 100 W) VCER 290 Vdc Collector−Current − Continuous − Peak (PW v 10 ms) IC ICM 40 50 Adc Apk Base−Current Continuous IB 8 Adc Total Device Dissipation @ TC = 25_C PD 250 W TJ, Tstg −65 to 200 _C Collector−Emitter Voltage Operating and Storage Junction Temperature Range TO−204AE (TO−3) CASE 197A MARKING DIAGRAM BUV22G AYWW MEX THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction−to−Case Symbol Max Unit qJC 0.7 _C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. BUV22 G A Y WW MEX = Device Code = Pb−Free Package = Assembly Location = Year = Work Week = Country of Origin ORDERING INFORMATION Device BUV22 BUV22G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 February, 2006 − Rev. 10 1 Package Shipping TO−204 100 Units / Tray TO−204 (Pb−Free) 100 Units / Tray Publication Order Number: BUV22/D BUV22 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min VCEO(sus) 250 Max Unit OFF CHARACTERISTICS (Note 1) Collector−Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH) Collector Cutoff Current at Reverse Bias (VCE = 300 V, VBE = −1.5 V) (VCE = 300 V, VBE = −1.5 V, TC = 125_C) ICEX Collector−Emitter Cutoff Current (VCE = 200 V) ICEO Emitter−Base Reverse Voltage (IE = 50 mA) VEBO Emitter−Cutoff Current (VEB = 5 V) IEBO Vdc mAdc 3.0 12.0 3.0 7 mAdc V 1.0 mAdc SECOND BREAKDOWN Second Breakdown Collector Current with base forward biased (VCE = 20 V, t = 1 s) (VCE = 140 V, t = 1 s) IS/b Adc 12 0.15 ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 10 A, VCE = 4 V) (IC = 20 A, VCE = 4 V) hFE 20 10 Collector−Emitter Saturation Voltage (IC = 10 A, IB = 1 A) (IC = 20 A, IB = 2.5 A) VCE(sat) Base−Emitter Saturation Voltage (IC = 40 A, IB = 4 A) VBE(sat) 60 Vdc 1.0 1.5 1.5 Vdc DYNAMIC CHARACTERISTICS Current Gain — Bandwidth Product (VCE = 15 V, IC = 2 A, f = 4 MHz) fT 8.0 MHz SWITCHING CHARACTERISTICS (Resistive Load) Turn−on Time (IC = 20 A, IB1 = IB2 = 2.5 A, VCC = 100 V, RC = 5 W) Storage Time Fall Time ton 0.8 ts 2.0 tf 0.35 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 1.0 DERATING FACTOR 0.8 0.6 0.4 0.2 0 40 80 120 TC, TEMPERATURE (°C) Figure 1. Power Derating http://onsemi.com 2 160 200 ms BUV22 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown limitations do not derate the same as thermal limitations. At high case temperatures, thermal limitations will reduce the power that can handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (A) 40 10 1 0.1 1 10 100 250 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 2. Active Region Safe Operating Area 2.0 50 IC/IB = 8 45 V, VOLTAGE (V) 1.6 40 1.2 VBE 0.8 VCE VCE = 5 V 35 30 25 20 15 0.4 10 5 0 1 0 0.1 10 IC, COLLECTOR CURRENT (A) 1 Figure 3. “On” Voltages t, TIME (s) μ 10 100 IC, COLLECTOR CURRENT (A) Figure 4. DC Current Gain VCC 3.0 2.0 1.0 tS 0.4 0.3 0.2 ton RC IB2 IB1 RB tF 4 8 12 16 104 mF 20 VCC = RC = RB = IB1 = IC/IB = 100 V 5W 2.7 W IB2 8 RC − RB: Non inductive resistances 24 IC, COLLECTOR CURRENT (A) Figure 6. Switching Times Test Circuit Figure 5. Resistive Switching Performance http://onsemi.com 3 BUV22 PACKAGE DIMENSIONS TO−204 (TO−3) CASE 197A−05 ISSUE K A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C −T− E D U DIM A B C D E G H K L N Q U V K 2 PL 0.30 (0.012) V SEATING PLANE T Q M M Y M −Y− L 2 H G B M T Y INCHES MIN MAX 1.530 REF 0.990 1.050 0.250 0.335 0.057 0.063 0.060 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC 0.760 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 38.86 REF 25.15 26.67 6.35 8.51 1.45 1.60 1.53 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC 19.31 21.08 3.84 4.19 30.15 BSC 3.33 4.77 1 −Q− 0.25 (0.010) M SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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