MJL3281A (NPN) MJL1302A (PNP) Preferred Devices Complementary Bipolar Power Transistors Features • • • • • • http://onsemi.com Exceptional Safe Operating Area NPN/PNP Gain Matching within 10% from 50 mA to 5 A Excellent Gain Linearity High BVCEO High Frequency Pb−Free Packages are Available 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS Benefits • • • • • Reliable Performance at Higher Powers Symmetrical Characteristics in Complementary Configurations Accurate Reproduction of Input Signal Greater Dynamic Range High Amplifier Bandwith MARKING DIAGRAM Applications • High−End Consumer Audio Products ♦Home • Amplifiers ♦Home Receivers Professional Audio Amplifiers ♦Theater and Stadium Sound Systems ♦Public Address Systems (PAs) 1 MJLxxxxA AYYWWG 2 3 TO−264 CASE 340G STYLE 2 xxxx A YY WW G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage VCEO 260 Vdc Collector−Base Voltage VCBO 260 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector−Emitter Voltage − 1.5 V VCEX 260 Vdc Collector Current − Continuous − Peak (Note 1) IC 15 25 Adc Base Current − Continuous IB 1.5 Adc Total Power Dissipation @ TC = 25°C Derate Above 25°C PD 200 1.43 Watts W/°C TJ, Tstg − 65 to +150 °C Operating and Storage Junction Temperature Range 3 1 EMITTER BASE 2 COLLECTOR = 3281 or 1302 = Location Code = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MJL3281A MJL3281AG MJL1302A MJL1302AG Package Shipping TO−264 25 Units/Rail TO−264 (Pb−Free) 25 Units/Rail TO−264 25 Units/Rail TO−264 (Pb−Free) 25 Units/Rail THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RθJC 0.625 °C/W Preferred devices are recommended choices for future use and best overall value. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle < 10%. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 9 1 Publication Order Number: MJL3281A/D MJL3281A (NPN) MJL1302A (PNP) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max 260 − − 50 − 5 4 1 − − 75 75 75 75 45 150 150 150 150 − − 3 30 − − 600 Unit OFF CHARACTERISTICS VCEO(sus) Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) Collector Cutoff Current (VCB = 260 Vdc, IE = 0) ICBO Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) IEBO Vdc μAdc μAdc SECOND BREAKDOWN Second Breakdown Collector with Base Forward Biased (VCE = 50 Vdc, t = 1 s (non−repetitive) (VCE = 100 Vdc, t = 1 s (non−repetitive) IS/b Adc ON CHARACTERISTICS DC Current Gain (IC = 500 mAdc, VCE = 5 Vdc) (IC = 1 Adc, VCE = 5 Vdc) (IC = 3 Adc, VCE = 5 Vdc) (IC = 5 Adc, VCE = 5 Vdc) (IC = 8 Adc, VCE = 5 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 1 Adc) VCE(sat) Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) MHz Cob http://onsemi.com 2 pF MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS NPN MJL3281A 60 50 f, T CURRENT BANDWIDTH PRODUCT (MHz) f, T CURRENT BANDWIDTH PRODUCT (MHz) PNP MJL1302A VCE = 10 V 40 5V 30 20 10 0 TJ = 25°C ftest = 1 MHz 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) 10 VCE = 10 V 50 5V 40 30 20 TJ = 25°C ftest = 1 MHz 10 0 0.1 1.0 IC, COLLECTOR CURRENT (AMPS) Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Product PNP MJL1302A NPN MJL3281A 1000 VCE = 5.0 V hFE , DC CURRENT GAIN hFE , DC CURRENT GAIN 1000 TJ = 100°C 25°C 100 −25 °C 10 0.05 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) VCE = 5.0 V TJ = 100°C −25 °C 10 0.05 100 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 Figure 4. DC Current Gain PNP MJL1302A NPN MJL3281A 2.5 3.0 TJ = 25°C IC/IB = 10 2.5 2.0 SATURATION VOLTAGE (VOLTS) SATURATION VOLTAGE (VOLTS) 25°C 100 Figure 3. DC Current Gain VBE(sat) 1.5 1.0 0.5 0 10 TJ = 25°C IC/IB = 10 2.0 1.5 VBE(sat) 1.0 0.5 VCE(sat) VCE(sat) 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 0 0.1 Figure 5. Typical Saturation Voltages 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 6. Typical Saturation Voltages http://onsemi.com 3 100 MJL3281A (NPN) MJL1302A (PNP) TYPICAL CHARACTERISTICS NPN MJL3281A 10 VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) VBE(on) , BASE−EMITTER VOLTAGE (VOLTS) PNP MJL1302A TJ = 25°C VCE = 5 V (DASHED) 1.0 0.1 VCE = 20 V (SOLID) 0.1 1.0 10 IC, COLLECTOR CURRENT (AMPS) 100 10 TJ = 25°C VCE = 5 V (DASHED) 1.0 0.1 VCE = 20 V (SOLID) 0.1 Figure 7. Typical Base−Emitter Voltage 1.0 10 IC, COLLECTOR CURRENT (AMPS) Figure 8. Typical Base−Emitter Voltage PNP MJL1302A NPN MJL3281A 10000 Cib Cib C, CAPACITANCE (pF) C, CAPACITANCE (pF) 10000 Cob 1000 1000 Cob TJ = 25°C ftest = 1 MHz 100 0.1 100 TJ = 25°C ftest = 1 MHz 1.0 10 100 100 0.1 1.0 10 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 9. MJL1302A Typical Capacitance Figure 10. MJL3281A Typical Capacitance 100 IC , COLLECTOR CURRENT (AMPS) 100 There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on TJ(pk) = 150°C; TC is variable depending on conditions. At high case temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 10 50 ms 1 sec 1.0 250 ms 0.1 1.0 10 100 1000 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 11. Active Region Safe Operating Area http://onsemi.com 4 MJL3281A (NPN) MJL1302A (PNP) PACKAGE DIMENSIONS TO−3PBL (TO−264) CASE 340G−02 ISSUE J Q 0.25 (0.010) −B− M T B M −T− C E U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. N A 1 R 2 L 3 P K W F 2 PL G J H D 3 PL 0.25 (0.010) M T B S DIM A B C D E F G H J K L N P Q R U W MILLIMETERS MIN MAX 28.0 29.0 19.3 20.3 4.7 5.3 0.93 1.48 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.2 REF 4.35 REF 2.2 2.6 3.1 3.5 2.25 REF 6.3 REF 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800 0.185 0.209 0.037 0.058 0.075 0.083 0.087 0.102 0.215 BSC 0.102 0.118 0.017 0.031 0.693 0.740 0.411 REF 0.172 REF 0.087 0.102 0.122 0.137 0.089 REF 0.248 REF 0.110 0.125 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PowerBase is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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