MMSD103T1 Preferred Device High Voltage Switching Diode MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 250 Vdc Peak Forward Current IF 200 mAdc IFM(surge) 625 mAdc Characteristic Symbol Value Unit Forward Power Dissipation, FR–5 Board (Note 1.) @ TA = 25°C Derate above 25°C PF 400 3.2 mW mW/°C Peak Forward Surge Current http://onsemi.com 1 Cathode 2 Anode THERMAL CHARACTERISTICS MARKING DIAGRAM 2 JS Thermal Resistance, Junction to Case RθJL 174 °C/W Thermal Resistance, Junction to Ambient RθJA 492 °C/W CASE 425–04, STYLE 1 SOD–123 Junction Temperature TJ 125 Max °C JS = Specific Device Code Tstg –55 to +150 °C Storage Temperature Range 1 1. FR–5 = 1.0 0.75 0.062 in. ORDERING INFORMATION Device Package Shipping MMSD103T1 SOD–123 3000 / Tape & Reel Preferred devices are recommended choices for future use and best overall value. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max — — 1.0 100 250 — — — 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) µAdc IR Reverse Breakdown Voltage (IBR = 100 µAdc) V(BR) Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF Diode Capacitance (VR = 0, f = 1.0 MHz) CD — 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) trr — 50 ns Semiconductor Components Industries, LLC, 2001 August, 2000 – Rev. 0 1 mV Publication Order Number: MMSD103T1/D MMSD103T1 820 Ω +10 V 2.0 k IF 100 µH tp tr 0.1 µF IF t trr 10% t 0.1 µF 90% D.U.T. 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE VR iR(REC) = 3.0 mA IR OUTPUT PULSE (IF = IR = 30 mA; MEASURED at iR(REC) = 3.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 30 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 3500 7000 6000 2500 REVERSE CURRENT (nA) FORWARD VOLTAGE (mV) 3000 TA = -55°C 2000 1500 TA = 155°C 1000 TA = 25°C 500 0 0.1 0.2 0.5 1 2 5 10 20 50 100 200 TA = 155°C 5000 4000 3000 6 5 4 3 2 1 0 TA = 25°C TA = -55°C 1 FORWARD CURRENT (mA) 2 5 10 20 50 REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage http://onsemi.com 2 100 200 300 MMSD103T1 INFORMATION FOR USING THE SOD–123 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.91 0.036 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 1.22 0.048 mm inches SOD–123 SOD–123 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOD–123 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOD–123 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOD–123 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOD–123 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 3 MMSD103T1 PACKAGE DIMENSIONS SOD–123 CASE 425–04 ISSUE C A C ÂÂÂÂ ÂÂÂÂ NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. H 1 K DIM A B C D E H J K B E 2 D INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.01 --0.000 0.004 --0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 --0.00 0.10 --0.15 3.55 3.85 STYLE 1: PIN 1. CATHODE 2. ANODE J Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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