MOTOROLA MMBD451LT1

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by MMBD451LT1/D
SEMICONDUCTOR TECHNICAL DATA
These Schottky barrier diodes are designed for high speed switching applications,
circuit protection, and voltage clamping. Extremely low forward voltage reduces
conduction loss. Miniature surface mount package is excellent for hand held and
portable applications where space is limited.
Motorola Preferred Device
• Extremely Fast Switching Speed
20 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODE
• Extremely Low Forward Voltage — 0.28 Volts (Typ) @ IF = 10 mAdc
3
CATHODE
3
2
ANODE
1
2
CASE 419 – 02, STYLE 2
SOT– 323 (SC – 70)
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Symbol
Value
Unit
VRM
20
Volts
Reverse Voltage
VR
10
Volts
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF
200
1.6
mW
mW/°C
Operating Junction
Temperature Range
TJ
Rating
Peak Reverse Voltage
°C
– 55 to +150
Storage Temperature Range
Tstg
°C
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Total Capacitance
(VR = 100 V, f = 1.0 MHz)
CT
—
6.0
—
pF
Reverse Current
(VR = 10 V)
IR
—
1.0
30
mAdc
Forward Voltage
(IF = 10 mAdc)
(IF = 100 mAdc)
VF
—
—
0.28
0.45
0.34
0.55
Characteristic
Vdc
Thermal Clad is a registered trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
MMBD451LT1
820 Ω
+10 V
2k
100 µH
0.1 µF
tr
IF
0.1 µF
tp
t
IF
trr
10%
t
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
IR
VR
INPUT SIGNAL
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBD451LT1
INFORMATION FOR USING THE SOT–323 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.65
0.025
0.65
0.075
1.9
0.035
0.9
0.028
0.7
inches
mm
SC–70/SOT–323 POWER DISSIPATION
The power dissipation of the SC–70/SOT–323 is a function
of the collector pad size. This can vary from the minimum
pad size for soldering to the pad size given for maximum
power dissipation. Power dissipation for a surface mount
device is determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from the
device junction to ambient; and the operating temperature,
TA. Using the values provided on the data sheet, PD can be
calculated as follows.
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 200 milliwatts.
PD =
150°C – 25°C
0.625°C/W
= 200 milliwatts
The 0.625°C/W assumes the use of the recommended
footprint on a glass epoxy printed circuit board to achieve a
power dissipation of 200 milliwatts. There are other alternatives to achieving higher power dissipation from the
SC–70/SOT–323 package. Another alternative would be to
use a ceramic substrate or an aluminum core board such as
Thermal Clad. Using a board material such as Thermal
Clad, a power dissipation of 300 milliwatts can be achieved
using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference should be a maximum of 10°C.
• The soldering temperature and time should not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MMBD451LT1
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
B
S
1
2
D
V
G
C
0.05 (0.002)
R N
J
K
H
DIM
A
B
C
D
G
H
J
K
L
N
R
S
V
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.035
0.049
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.031
0.039
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.90
1.25
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
0.80
1.00
2.00
2.20
0.30
0.40
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
CASE 419–02
ISSUE H
SOT–323 (SC–70)
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
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MMBD451LT1/D
Motorola Small–Signal Transistors, FETs and Diodes
Device Data