NL27WZ07 Dual Buffer with Open Drain Outputs The NL27WZ07 is a high performance dual buffer with open drain outputs operating from a 1.65 to 5.5 V supply. The internal circuit is composed of multiple stages, including an open drain output which provides the capability to set output switching level. This allows the NL27WZ07 to be used to interface 5 V circuits to circuits of any voltage between VCC and 7.0 V using an external resistor and power supply. http://onsemi.com MARKING DIAGRAMS Features • • • • • • • • • SC−88 DF SUFFIX CASE 419B Extremely High Speed: tPD 2.3 ns (typical) at VCC = 5.0 V Designed for 1.65 V to 5.5 V VCC Operation, CMOS compatible Over Voltage Tolerant Inputs LVTTL Compatible − Interface Capability with 5.0 V TTL Logic with VCC = 3.0 V LVCMOS Compatible 24 mA Output Sink Capability Near Zero Static Supply Current Substantially Reduces System Power Requirements Chip Complexity: FET = 72; Equivalent Gate = 18 Pb−Free Packages are Available M7d Pin 1 d = Date Code TSOP−6 DT SUFFIX CASE 318G M7d Pin 1 d = Date Code PIN ASSIGNMENT IN A1 GND IN A2 1 6 2 5 4 3 OUT Y1 VCC 1 IN A1 2 GND 3 IN A2 4 OUT Y2 5 VCC 6 OUT Y1 OUT Y2 FUNCTION TABLE A Input Figure 1. Pinout (Top View) IN A1 1 OUT Y1 IN A2 1 OUT Y2 Y Output L H L Z ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Figure 2. Logic Symbol Semiconductor Components Industries, LLC, 2004 April, 2004 − Rev. 7 1 Publication Order Number: NL27WZ07/D NL27WZ07 MAXIMUM RATINGS Symbol Characteristics Value Unit 0.5 to 7.0 V 0.5 ≤ VI ≤ 7.0 V 0.5 ≤ VO ≤ 7.0 V VI < GND 50 mA VO < GND 50 mA DC Output Sink Current 50 mA DC Supply Current per Supply Pin 100 mA IGND DC Ground Current per Ground Pin 100 mA TSTG Storage Temperature Range 65 to 150 °C PD Power Dissipation in Still Air SC−88, TSOP−6 200 mW JA Thermal Resistance SC−88, TSOP−6 333 °C/W TL Lead Temperature, 1 mm from case for 10 s 260 °C TJ Junction Temperature under Bias 150 °C ILatch−Up Latch−Up Performance 500 mA MSL Moisture Sensitivity FR Flammability Rating VESD ESD Classification VCC DC Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK DC Input Diode Current IOK DC Output Diode Current IO ICC Output in Z or LOW State (Note 1) Above VCC and Below GND at 85°C (Note 5) Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Human Body Model (Note 3) Machine Model (Note 4) Charged Device Model (Note 5) > 2000 > 200 N/A Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. IO absolute maximum rating must be observed. 2. Tested to EIA/JESD22−A114−A, rated to EIA/JESD22−A114−B. 3. Tested to EIA/JESD22−A115−A, rated to EIA/JESD22−A115−A. 4. Tested to JESD22−C101−A 5. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Parameter VCC Supply Voltage VI Input Voltage VO Output Voltage TA Operating Free−Air Temperature t/V Input Transition Rise or Fall Rate Operating Data Retention Only (Z or LOW State) VCC = 2.5 V 0.2 V VCC =3.0 V 0.3 V VCC =5.0 V 0.5 V http://onsemi.com 2 Min Max Unit 1.65 1.5 5.5 5.5 V 0 5.5 V 0 5.5 V 40 85 °C 0 0 0 20 10 5 ns/V NL27WZ07 DC ELECTRICAL CHARACTERISTICS Symbol Parameter Condition 40°C ≤TA ≤ 85°C TA = 25°C VCC (V) Min 0.75 VCC 0.75 VCC Typ Max Min Max VIH High−Level Input Voltage 1.65 to 1.95 2.3 to 5.5 VIL Low−Level Input Voltage 1.65 to 1.95 2.3 to 5.5 0.3 VCC 0.3 VCC 0.3 VCC 0.3 VCC V ILKG Z−State Output Leakage Current VIN = VIL VOUT = VCC or GND 2.3 to 5.5 5.0 10.0 A VOL Low−Level Output Voltage VIN = VIL IOL = 100 A 1.65 to 5.5 0.0 0.1 0.1 V IOL = 4 mA 1.65 0.08 0.24 0.24 IIN Input Leakage Current IOFF Power Off−Output Leakage Current ICC Quiescent Supply Current 0.75 VCC 0.75 VCC Unit V IOL = 8 mA 2.3 0.20 0.3 0.3 IOL = 12 mA 2.7 0.22 0.4 0.4 IOL = 16 mA 3.0 0.28 0.4 0.4 IOL = 24 mA 3.0 0.38 0.55 0.55 IOL = 32 mA 4.5 0.42 0.55 0.55 VIN or VOUT = VCC or GND 0 to 5.5 0.1 1.0 A VOUT = 5.5 V 0 1 10 A VIN = VCC or GND 5.5 1 10 A ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 40°C ≤TA ≤ 85°C TA = 25°C Symbol tPZL tPLZ Condition VCC (V) Min Typ Max Min Max Unit RL = R1= 5000 CL = 15 pF 1.8 0.15 1.8 5.3 11.5 1.8 12.0 ns RL = R1= 500 CL = 50 pF 2.5 0.2 1.2 3.7 5.8 1.2 6.4 3.3 0.3 0.8 2.9 4.4 0.8 4.8 5.0 0.5 0.5 2.3 3.5 0.5 3.9 RL = R1= 5000 CL = 15 pF 1.8 0.15 1.8 5.3 11.5 1.8 12.0 RL = R1= 500 CL = 50 pF 2.5 0.2 1.2 2.8 5.8 1.2 6.4 3.3 0.3 0.8 2.1 4.4 0.8 4.8 5.0 0.5 0.5 1.4 3.5 0.5 3.9 Parameter Propagation Delay (Figure 3 and 4) Propagation Delay (Figure 3 and 4) ns CAPACITIVE CHARACTERISTICS Symbol Parameter Condition Typical Unit CIN Input Capacitance VCC = 5.5 V, VI = 0 V or VCC 2.5 pF COUT Output Capacitance VCC = 5.5 V, VI = 0 V or VCC 4.0 pF CPD Power Dissipation Capacitance (Note 6) 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 4.0 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin ICC VCC. http://onsemi.com 3 NL27WZ07 VCC A 50% GND tPZL tPLZ HIGH IMPEDANCE 50% VCC Y VOL 0.3 V Figure 3. Switching Waveforms VCC VCC 2 R1 PULSE GENERATOR DUT RT CL RL RT = ZOUT of pulse generator (typically 50 ) Figure 4. Test Circuit ORDERING INFORMATION Device Nomenclature Logic Circuit Indicator No. of Gates per Package Temp Range Identifier NL27WZ07DFT2 NL 2 NL27WZ07DFT2G NL NL27WZ07DTT1 NL27WZ07DTT1G Device Technology Device Function Package Suffix Tape & Reel Suffix Package Type (Name/SOT#/ Common Name) Shipping† 7 WZ 07 DF T2 SC−88 / SOT−363 / SC−70 178 mm (7”) 3000 Unit 2 7 WZ 07 DF T2 SC−88 / SOT−363 / SC−70 (Pb−Free) 178 mm (7”) 3000 Unit NL 2 7 WZ 07 DT T1 TSOP−6 / SOT−23 / SC−59 178 mm (7”) 3000 Unit NL 2 7 WZ 07 DT T1 TSOP−6 / SOT−23 / SC−59 (Pb−Free) 178 mm (7”) 3000 Unit †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NL27WZ07 PACKAGE DIMENSIONS SC−88 (SOT−363) DF SUFFIX CASE 419B−02 ISSUE T NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. A G 6 5 4 1 2 3 DIM A B C D G H J K N S −B− S D 6 PL 0.2 (0.008) M B INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC −−− 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 M N J C H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC −−− 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 NL27WZ07 PACKAGE DIMENSIONS TSOP−6 DT SUFFIX CASE 318G−02 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. A L 6 S 1 5 4 2 3 B MILLIMETERS DIM MIN MAX A 2.90 3.10 B 1.30 1.70 C 0.90 1.10 D 0.25 0.50 G 0.85 1.05 H 0.013 0.100 J 0.10 0.26 K 0.20 0.60 L 1.25 1.55 M 0_ 10 _ S 2.50 3.00 D G M J C 0.05 (0.002) K H INCHES MIN MAX 0.1142 0.1220 0.0512 0.0669 0.0354 0.0433 0.0098 0.0197 0.0335 0.0413 0.0005 0.0040 0.0040 0.0102 0.0079 0.0236 0.0493 0.0610 0_ 10 _ 0.0985 0.1181 SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm inches Figure 5. TSOP−6 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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