NL27WZ04 Dual Inverter The NL27WZ04 is a high performance dual inverter operating from a 1.65 V to 5.5 V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance. http://onsemi.com Features • • • • • • • MARKING DIAGRAMS 6 SC−88/SC70−6/SOT−363 DF SUFFIX CASE 419B 1 1 TSOP−6 DT SUFFIX CASE 318G 1 6 OUT Y1 GND 2 5 VCC M5 M G G 1 1 M5 M G IN A1 M5 M G G M • • • Extremely High Speed: tPD 2.0 ns (typical) at VCC = 5 V Designed for 1.65 V to 5.5 V VCC Operation Over Voltage Tolerant Inputs and Outputs LVTTL Compatible − Interface Capability with 5 V TTL Logic with VCC = 3 V LVCMOS Compatible 24 mA Balanced Output Sink and Source Capability Near Zero Static Supply Current Substantially Reduces System Power Requirements Replacement for NC7W04 Chip Complexity: FET = 72; Equivalent Gate = 18 Pb−Free Packages are Available = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position and underbar may vary depending upon manufacturing location. PIN ASSIGNMENT IN A2 3 4 OUT Y2 Figure 1. Pinout (Top View) IN A1 1 IN A2 1 1 IN A1 2 GND 3 IN A2 4 OUT Y2 5 VCC 6 OUT Y1 OUT Y1 FUNCTION TABLE OUT Y2 Figure 2. Logic Symbol A Input Y Output L H H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2007 February, 2007 − Rev.6 1 Publication Order Number: NL27WZ04/D NL27WZ04 MAXIMUM RATINGS Characteristics Symbol Value Unit VCC −0.5 to +7.0 V VI −0.5 ≤ VI ≤ +7.0 V Output in HIGH or LOW State (Note 1) VO −0.5 ≤ VO ≤ 7.0 V VI < GND IIK −50 mA VO < GND DC Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current DC Output Diode Current IOK −50 mA DC Output Source/Sink Current IO ±50 mA DC Supply Current Per Supply Pin ICC ±100 mA DC Ground Current Per Ground Pin IGND ±100 mA Storage Temperature Range TSTG −65 to +150 °C SC−88, TSOP−6 (Note 2) PD 200 mW SC−88, TSOP−6 (Note 2) Power Dissipation in Still Air qJA 333 °C/W Lead temperature, 1 mm from Case for 10 Seconds TL 260 °C Junction Temperature Under Bias TJ +150 °C VESD > 2000 > 200 N/A V Thermal Resistance ESD Withstand Voltage Human Body Model (Note 3) Machine Model (Note 4) Charged Device Model (Note 5) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. IO absolute maximum rating must be observed. 2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow. 3. Tested to EIA/JESD22−A114−A 4. Tested to EIA/JESD22−A115−A 5. Tested to JESD22−C101−A RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Operating Data Retention Only Input Voltage Output Voltage (HIGH or LOW State) Operating Free−Air Temperature Input Transition Rise or Fall Rate VCC = 2.5 V ±0.2 V VCC =3.0 V ±0.3 V VCC =5.0 V ±0.5 V http://onsemi.com 2 Symbol Min Max Unit VCC 1.65 1.5 5.5 5.5 V VI 0 5.5 V VO 0 5.5 V TA −40 +85 °C Dt/DV 0 0 0 20 10 5 ns/V NL27WZ04 DC ELECTRICAL CHARACTERISTICS VCC Parameter Condition High−Level Input Voltage Low−Level Input Voltage High−Level Output Voltage VIN = VIL Low−Level Output Voltage VIN = VIH Symbol (V) Min VIH 1.65−1.95 0.75 VCC 0.75 VCC 2.3 to 5.5 0.7 VCC 0.7 VCC VIL IOH = −100 mA −40°C ≤ TA ≤ 85°C TA = 25°C Typ Max Min Max V 1.65−1.95 0.25 VCC 0.25 VCC 2.3 to 5.5 0.3 VCC 0.3 VCC 1.65 to 5.5 VCC − 0.1 VCC VCC − 0.1 IOH = −3 mA 1.65 1.29 1.52 1.29 IOH = −8 mA 2.3 1.9 2.1 1.9 IOH = −12 mA 2.7 2.2 2.4 2.2 IOH = −16 mA 3.0 2.4 2.7 2.4 IOH = −24 mA 3.0 2.3 2.5 2.3 IOH = −32 mA 4.5 3.8 4.0 3.8 IOL = 100 mA VOH 0.1 0.1 1.65 0.08 0.24 0.24 IOL = 8 mA 2.3 0.20 0.3 0.3 IOL = 12 mA 2.7 0.22 0.4 0.4 IOL = 16 mA 3.0 0.28 0.4 0.4 IOL = 24 mA 3.0 0.38 0.55 0.55 4.5 0.42 IOL = 32 mA 1.65 to 5.5 V V IOL = 3 mA VOL Unit V 0.55 0.55 VIN = VCC or GND IIN 0 to 5.5 ±0.1 ±1.0 mA Power Off−Output Leakage Current VOUT = 5.5 V IOFF 0 1 10 mA Quiescent Supply Current VIN = VCC or GND ICC 1.65 to 5.5 1 10 mA Input Leakage Current ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS tR = tF = 2.5 ns; CL = 50 pF; RL = 500 W Min Typ Max Min Max Unit 1.65 1.8 2.3 9.2 1.8 11.0 ns 1.8 1.8 4.4 7.6 1.8 8.4 RL = 1 MW, CL = 15 pF 2.5 ± 0.2 1.2 3.0 5.1 1.2 5.6 RL = 1 MW, CL = 15 pF 3.3 ± 0.3 0.8 2.2 3.4 0.8 3.8 1.2 2.9 4.5 1.2 5.0 0.5 1..8 2.8 0.5 3.1 0.8 2.3 3.6 0.8 4.0 Condition Symbol RL = 1 MW, CL = 15 pF tPLH tPHL Parameter Propagation Delay (Figure 3 and 4) −40°C ≤ TA ≤ 85°C TA = 25°C VCC (V) RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF 5.0 ± 0.5 RL = 1 MW, CL = 15 pF RL = 500 W, CL = 50 pF CAPACITIVE CHARACTERISTICS Parameter Symbol Condition Typical Unit Input Capacitance CIN VCC = 5.5 V, VI = 0 V or VCC 2.5 pF Power Dissipation Capacitance (Note 6) CPD 10 MHz, VCC = 3.3 V, VI = 0 V or VCC 10 MHz, VCC = 5.5 V, VI = 0 V or VCC 9 11 pF 6. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD VCC2 fin + ICC VCC. http://onsemi.com 3 NL27WZ04 VCC A 50% GND tPLH Y tPHL 50% VCC PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 3. Switching Waveforms VCC PULSE GENERATOR DUT RT CL RL RT = ZOUT of pulse generator (typically 50 W) Figure 4. Test Circuit ORDERING INFORMATION Device Package NL27WZ04DFT2 SC−88/SC70−6/SOT−363 NL27WZ04DFT2G SC−88/SC70−6/SOT−363 (Pb−Free) Shipping† 3000 / Tape & Reel NL27WZ04DTT1 NL27WZ04DTT1G TSOP−6 TSOP−6 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NL27WZ04 PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. D e 6 5 4 1 2 3 HE DIM A A1 A3 b C D E e L HE −E− b 6 PL 0.2 (0.008) M E M MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 A3 C A A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 NL27WZ04 PACKAGE DIMENSIONS TSOP−6 CASE 318G−02 ISSUE S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D 6 HE 1 5 4 2 3 E b DIM A A1 b c D E e L HE q e q c A 0.05 (0.002) L A1 MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.38 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.014 0.007 0.118 0.059 0.037 0.016 0.108 − MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° SOLDERING FOOTPRINT* 2.4 0.094 1.9 0.075 0.95 0.037 0.95 0.037 0.7 0.028 1.0 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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