NSDEMP11XV6T1, NSDEMP11XV6T5 Common Anode Quad Array Switching Diode These Common Anode Epitaxial Planar QUAD Diodes are designed for use in ultra high speed switching applications. The NSDEMP11XV6T1 device is housed in the SOT-563 package which is designed for low power surface mount applications, where board space is at a premium. • Fast trr • Low CD • Available in 8 mm; 7 inch Tape and Reel http://onsemi.com (2) (3) (1) MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit VR 80 Vdc Reverse Voltage Peak Reverse Voltage VRM 80 Vdc IF 100 mAdc IFM 300 mAdc IFSM (Note 1) 2.0 Adc Forward Current Peak Forward Current Peak Forward Surge Current (4) 6 MARKING DIAGRAM 2 3 SOT-563 CASE 463A PLASTIC THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit PD 357 (Note 2) 2.9 (Note 2) mW TA = 25°C Derate above 25°C RJA 350 (Note 2) °C/W Characteristic (Both Junctions Heated) Symbol Max Unit P9 = Specific Device Code D = Date Code PD 500 (Note 2) 4.0 (Note 2) mW ORDERING INFORMATION Device TA = 25°C Derate above 25°C Junction and Storage Temperature mW/°C RJA 250 (Note 2) °C/W TJ, Tstg - 55 to +150 °C Thermal Resistance Junction-to-Ambient P9 D mW/°C Thermal Resistance Junction-to-Ambient Total Device Dissipation (6) 54 1 1. t = 1 S Total Device Dissipation (5) Package Shipping NSDEMP11XV6T1 SOT-563 4 mm pitch 4000/Tape & Reel NSDEMP11XV6T5 SOT-563 2 mm pitch 8000/Tape & Reel 2. FR-4 @ Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit Reverse Voltage Leakage Current IR VR = 70 V - 0.1 Adc Forward Voltage VF IF = 100 mA - 1.2 Vdc Reverse Breakdown Voltage VR IR = 100 A -0 — Vdc CD VR = 6.0 V, f = 1.0 MHz - 3.5 pF trr (Note 2) IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR - 4.0 ns Diode Capacitance Reverse Recovery Time 3. trr Test Circuit for NSDEMP11XV6T1 in Figure 4. Semiconductor Components Industries, LLC, 2003 February, 2003 - Rev. 1 1 Publication Order Number: NSDEMP11XV6T1/D NSDEMP11XV6T1, NSDEMP11XV6T5 TYPICAL ELECTRICAL CHARACTERISTICS 10 IR , REVERSE CURRENT (µA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 10 0 Figure 1. Forward Voltage 50 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Current 1.75 CD , DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance tr tp t IF trr t 10% A RL Irr = 0.1 IR 90% VR tp = 2 s tr = 0.35 ns INPUT PULSE RECOVERY TIME EQUIVALENT TEST CIRCUIT Figure 4. Reverse Recovery Time Test Circuit for the NSDEMP11XV6T1 http://onsemi.com 2 IF = 5.0 mA VR = 6 V RL = 100 OUTPUT PULSE NSDEMP11XV6T1, NSDEMP11XV6T5 INFORMATION FOR USING THE SOT-563 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.3 0.0118 0.45 0.0177 1.0 0.0394 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches SOT-563 SOT-563 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-563 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-563 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C - 25°C 833°C/W = 150 milliwatts The 833°C/W for the SOT-563 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-563 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 3 NSDEMP11XV6T1, NSDEMP11XV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE O A -X- 5 6 1 2 C K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4 B -Y- 3 D G STYLE 1: PIN 1. 2. 3. 4. 5. 6. J 5 PL 6 0.08 (0.003) EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1 DIM A B C D G J K S S M X Y STYLE 2: PIN 1. 2. 3. 4. 5. 6. STYLE 3: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 EMITTER2 BASE 2 COLLECTOR 2 BASE 1 COLLECTOR 1 CATHODE 1 CATHODE 1 ANODE/ANODE 2 CATHODE 2 CATHODE 2 ANODE/ANODE 1 STYLE 4: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 4 NSDEMP11XV6T1/D