DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D113 BYG90-90 Schottky barrier rectifier diode Product specification Supersedes data of December 1994 File under Discrete Semiconductors, SC01 1996 May 13 Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 FEATURES DESCRIPTION • Low switching losses The BYG 90-90 is a Schottky barrier rectifier diode, fabricated in planar technology, and encapsulated in the rectangular SOD106A plastic SMD package. • High breakdown voltage • Capability of absorbing very high surge current • Fast recovery time handbook, 4 columnscathode identifier • Guard ring protected • Plastic SMD package. k a APPLICATIONS • Low power switched-mode power supplies MAM129 - 1 Top view • Rectifying Fig.1 Simplified outline (SOD106A) and symbol. • Polarity protection. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VR continuous reverse voltage 90 V VRRM repetitive peak reverse voltage 90 V VRWM crest working reverse voltage 90 V A average forward current Tamb = 100 °C; see Fig.2; Rth j-a = 13.5 K/W; note 1; VR(equiv) = 0.2 V; note 2 − 1 IFSM non-repetitive peak forward current t = 8.3 ms half sine wave; JEDEC method − 30 A IRSM non-repetitive peak reverse current tp = 100 µs − 0.5 A Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C IF(AV) Notes 1. Refer to SOD106A standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 1996 May 13 2 Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF IR Cd PARAMETER forward voltage reverse current diode capacitance CONDITIONS MIN. TYP. MAX. UNIT see Fig.2; note 1 IF = 0.06 A − − 360 mV IF = 1 A − − 790 mV IF = 1 A; Tj = 100 °C − − 690 mV VR = VRRMmax; note 1; see Fig.3 − − 0.5 mA VR = VRRMmax; Tj = 100 °C; note 1; see Fig.3 − − 5 mA VR = 4 V; f = 1 MHz; see Fig.4 − − 100 pF Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD106A standard mounting conditions. 1996 May 13 3 VALUE UNIT 80 K/W Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 GRAPHICAL DATA MLC497 10 4 handbook, halfpage MLC498 5 10halfpage handbook, IR (µA) IF (mA) (1) 10 4 (2) 10 3 (3) 10 3 (4) (1) (2) (3) (4) (5) 10 2 10 2 10 10 1 0 (1) (2) (3) (4) (5) 0.4 0.8 1 1.2 V (V) 1.6 F Tamb = 150 °C. Tamb = 125 °C. Tamb = 100 °C. Tamb = 85 °C. Tamb = 25 °C. Fig.2 Fig.3 MLC499 10 3 handbook, halfpage Cd (pF) 10 2 10 50 VR (V) 100 f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 May 13 0 20 40 60 80 100 VR (V) (1) Tamb = 150 °C. (2) Tamb = 125 °C. (3) Tamb = 100 °C. (4) Tamb = 85 °C. (5) Tamb = 25 °C. Forward current as a function of forward voltage; typical values. 0 (5) 4 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 PACKAGE OUTLINE 5.5 5.1 handbook, full pagewidth 4.57 max 2.65 max 0.1 0.2 1.5 1.2 cathode identifier 2.5 1.5 Dimensions in mm. The marking bar indicates the cathode. Fig.5 SOD106A. 1996 May 13 5 MSA356 - 1 Philips Semiconductors Product specification Schottky barrier rectifier diode BYG90-90 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 13 6