New Product SS8PH9, SS8PH10 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount High Voltage Schottky Rectifier FEATURES eSMP ® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Guardring for overvoltage protection K • High barrier technology, TJ = 175 °C maximum • Low leakage current 1 • Meets MSL level 1, per LF maximum peak of 260 °C 2 J-STD-020, • AEC-Q101 qualified TO-277A (SMPC) K Cathode Anode 1 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Anode 2 • Halogen-free according to IEC 61249-2-21 definition PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 90 V, 100 V IFSM 150 A EAS 20 mJ VF at IF = 8.0 A 0.720 V IR 0.18 μA TJ max. 175 °C TYPICAL APPLICATIONS MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code SS8PH9 SS8PH10 8H9 8H10 UNIT Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 8.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at IAS = 2.0 A, TJ = 25 °C EAS 20 mJ TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range Revision: 28-Jun-11 90 100 V Document Number: 88989 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS8PH9, SS8PH10 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 4.0 A TA = 25 °C IF = 8.0 A Instantaneous forward voltage VF (1) IF = 4.0 A TA = 125 °C IF = 8.0 A Reverse current TA = 25 °C Rated VR Typical junction capacitance SYMBOL TA = 125 °C 4.0 V, 1 MHz IR (2) CJ TYP. MAX. 0.769 - 0.850 0.90 0.634 - 0.720 0.76 0.18 2.0 110 300 140 - UNIT V μA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL RJA Typical thermal resistance SS8PH9 (1) SS8PH10 65 3 RJL UNIT °C/W Note (1) Units mounted on recommended PCB 1 oz. pad layout ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE SS8PH10-M3/86A 0.10 86A 1500 7" diameter plastic tape and reel SS8PH10-M3/87A 0.10 87A 6500 13" diameter plastic tape and reel SS8PH10HM3/86A (1) 0.10 86A 1500 7" diameter plastic tape and reel SS8PH10HM3/87A (1) 0.10 87A 6500 13" diameter plastic tape and reel Note Automotive grade (1) Revision: 28-Jun-11 Document Number: 88989 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS8PH9, SS8PH10 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 10 Average Forward Current (A) Instantaneous Reverse Current (µA) 10 000 Resistive or Inductive Load 9 8 7 6 5 4 3 TL measured at the Cathode Band Terminal 2 1 0 100 120 130 140 150 160 100 TA = 125 °C 10 1 0.1 TA = 25 °C 0.01 170 10 180 20 30 40 50 60 70 80 90 Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 100 1000 D = 0.5 D = 0.8 D = 0.3 7.0 D = 0.2 Junction Capacitance (pF) Average Power Loss (W) TA = 150 °C 0.001 110 8.0 6.0 D = 0.1 5.0 4.0 D = 1.0 3.0 T 2.0 1.0 D = tp/T tp 6.0 8.0 0 100 10 0 1.0 2.0 3.0 4.0 5.0 7.0 0.1 9.0 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) TA = 175 °C 1000 TA = 175 °C TA = 150 °C 10 TA = 125 °C 1 TA = 25 °C 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Junction to Ambient 10 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 28-Jun-11 Document Number: 88989 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product SS8PH9, SS8PH10 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC TO-277A Revision: 28-Jun-11 Document Number: 88989 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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