VISHAY SI1419DH

SPICE Device Model Si1419DH
Vishay Siliconix
P-Channel 200-V (D-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics
DESCRIPTION
The attached spice model describes the typical electrical
characteristics of the p-channel vertical DMOS. The subcircuit
model is extracted and optimized over the −55 to 125°C
temperature ranges under the pulsed 0-V to 10-V gate drive. The
saturated output impedance is best fit at the gate bias near the
threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model
the gate charge characteristics while avoiding convergence difficulties
of the switched Cgd model. All model parameter values are optimized
to provide a best fit to the measured electrical data and are not
intended as an exact physical interpretation of the device.
SUBCIRCUIT MODEL SCHEMATIC
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate
data sheet of the same number for guaranteed specification limits.
Document Number: 73330
S-50412Rev. A, 14-Mar-05
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SPICE Device Model Si1419DH
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
VGS(th)
VDS = VGS, ID = −250 µA
3.1
Measured
Data
Unit
Static
Gate Threshold Voltage
On-State Drain Current
a
Drain-Source On-State Resistance a
ID(on)
rDS(on)
V
VDS = −5 V, VGS = −10 V
1.3
VGS = −10 V, ID = −0.4 A
3.95
3.98
VGS = −6 V, ID = −0.4 A
4.08
4.06
A
Ω
Forward Transconductance a
gfs
VDS = −10 V, ID = −0.4 A
0.5
1
S
Diode Forward Voltage a
VSD
IS = −0.4 A, VGS = 0 V
−0.72
−0.80
V
Dynamic
b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS = −100 V, VGS = −10 V, ID = −0.4 A
3.6
4.1
0.8
0.8
1.3
1.3
nC
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 73330
S-50412Rev. A, 14-Mar-05
SPICE Device Model Si1419DH
Vishay Siliconix
COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED)
Document Number: 73330
S-50412Rev. A, 14-Mar-05
www.vishay.com
3