K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Document Title
64M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
Initial issue.
Draft Date
Remark
Apr. 24th 2004
Advance
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
64M x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
Vcc Range
PKG Type
K9F1208Q0B-D,H
1.70 ~ 1.95V
FBGA
K9F1208D0B-Y,P
TSOP1
2.4 ~ 2.9V
K9F1208D0B-D,H
FBGA
K9F1208U0B-Y,P
K9F1208U0B-D,H
TSOP1
2.7 ~ 3.6V
FBGA
K9F1208U0B-V,F
WSOP1
FEATURES
• Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Intelligent Copy-Back
• Unique ID for Copyright Protection
• Package
- K9F1208X0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0B-GCB0/GIB0
63- Ball FBGA (8.5 x 13 , 1.0 mm width)
- K9F1208U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1208X0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208X0B-JCB0/JIB0
63- Ball FBGA - Pb-free Package
- K9F1208U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0B-V,F(WSOPI ) is the same device as
K9F1208U0B-Y,P(TSOP1) except package type.
• Voltage Supply
- 1.8V device(K9F1208Q0B) : 1.70~1.95V
- 2.65V device(K9F1208D0B) : 2.4~2.9V
- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
• Organization
- Memory Cell Array : (64M + 2048K)bit x 8 bit
- Data Register : (512 + 16)bit x 8bit
• Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
• Page Read Operation
- Page Size : (512 + 16)Byte
- Random Access
: 15µs(Max.)
- Serial Page Access : 50ns(Min.)
GENERAL DESCRIPTION
Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed
in typical 200µs on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page
can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command
input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal
verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B′s extended reliability of
100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an
optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring
non-volatility.
2
K9F1208Q0B
K9F1208D0B
K9F1208U0B
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FLASH MEMORY
PIN CONFIGURATION (TSOP1)
K9F1208U0B-YCB0,PCB0/YIB0,PIB0
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
0.10
MAX
0.004
Unit :mm/Inch
#48
#24
#25
12.40
0.488 MAX
12.00
0.472
+0.003
( 0.25 )
0.010
#1
0.008-0.001
0.50
0.0197
0.16 -0.03
+0.075
18.40±0.10
0.724±0.004
0~8°
0.45~0.75
0.018~0.030
+0.003
0.005-0.001
0.25
0.010 TYP
1.00±0.05
0.039±0.002
0.125 0.035
+0.07
0.20 -0.03
+0.07
20.00±0.20
0.787±0.008
( 0.50 )
0.020
3
1.20
0.047MAX
0.05
0.002 MIN
K9F1208Q0B
K9F1208D0B
K9F1208U0B
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FLASH MEMORY
PIN CONFIGURATION (FBGA)
K9F1208X0B-DCB0,HCB0/DIB0,HIB0
1
2
3
4
5
6
N.C N.C
N.C N.C
A
N.C
N.C N.C
/WP
ALE
Vss
/CE
/WE
R/B
NC
/RE
CLE
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
I/O0
B
C
D
E
F
NC
NC
Vcc
VccQ I/O5
NC
I/O7
G
H
NC
I/O1
NC
Vss
I/O2
I/O3 I/O4
I/O6
Vss
N.C N.C
N.C N.C
N.C N.C
N.C N.C
Top View
4
Package Dimensions
FLASH MEMORY
63-Ball FBGA (measured in millimeters)
Top View
Bottom View
#A1 INDEX MARK(OPTIONAL)
8.50±0.10
6
8.50±0.10
0.80 x 9= 7.20
0.80 x 5= 4.00
0.80
5 4 3 2
A
B
1
#A1
0.80
(Datum A)
A
D
2.80
E
F
G
H
63-∅0.45±0.05
∅ 0.20 M A B
0.35±0.05
Side View
13.00±0.10
0.10MAX
0.45±0.05
5
0.90±0.10
2.00
13.00±0.10
0.80 x 7= 5.60
13.00±0.10
C
0.80 x 11= 8.80
B
(Datum B)
K9F1208Q0B
K9F1208D0B
K9F1208U0B
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FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F1208U0B-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
N.C
N.C
DNU
N.C
I/O7
I/O6
I/O5
I/O4
N.C
DNU
N.C
Vcc
Vss
N.C
DNU
N.C
I/O3
I/O2
I/O1
I/O0
N.C
DNU
N.C
N.C
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
0.70 MAX
0.58±0.04
15.40±0.10
#48
#24
#25
0.20
0.50TYP
(0.50±0.06)
12.40MAX
12.00±0.10
+0.07
-0.03
0.16
+0.07
-0.03
#1
8°
0°~
0.10 +0.075
-0.035
(0.01Min)
0.45~0.75
17.00±0.20
6
K9F1208Q0B
K9F1208D0B
K9F1208U0B
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FLASH MEMORY
PIN DESCRIPTION
Pin Name
Pin Function
I/O0 ~ I/O7
(K9F1208X0B)
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The
I/O pins float to high-z when the chip is deselected or when the outputs are disabled.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase operation. Regarding CE control during
read operation, refer to ’Page read’section of Device operation .
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
R/B
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
VccQ
OUTPUT BUFFER POWER
VccQ is the power supply for Output Buffer.
VccQ is internally connected to Vcc, thus should be biased to Vcc.
Vcc
POWER
VCC is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
DNU
DO NOT USE
Leave it disconnected.
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
7
K9F1208Q0B
K9F1208D0B
K9F1208U0B
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FLASH MEMORY
Figure 1-1. K9F1208X0B FUNCTIONAL BLOCK DIAGRAM
VCC
VSS
A9 - A25
X-Buffers
Latches
& Decoders
A0 - A 7
Y-Buffers
Latches
& Decoders
512M + 16M Bit
NAND Flash
ARRAY
(512 + 16)Byte x 131072
Page Register & S/A
A8
Y-Gating
Command
Command
Register
CE
RE
WE
VCC/VCCQ
VSS
I/O Buffers & Latches
Control Logic
& High Voltage
Generator
Output
Driver
Global Buffers
I/0 0
I/0 7
CLE ALE WP
Figure 2-1. K9F1208X0B ARRAY ORGANIZATION
1 Block =32 Pages
= (16K + 512) Byte
128K Pages
(=4,096 Blocks)
1st half Page Register
2nd half Page Register
(=256 Bytes)
(=256 Bytes)
1 Page = 528 Byte
1 Block = 528 Byte x 32 Pages
= (16K + 512) Byte
1 Device = 528Bytes x 32Pages x 4096 Blocks
= 528 Mbits
8 bit
512Byte
16 Byte
I/O 0 ~ I/O 7
Page Register
512 Byte
I/O 0
I/O 1
16 Byte
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A9
A10
A11
A12
A13
A14
A15
A16
3rd Cycle
A17
A18
A19
A20
A21
A22
A23
A24
4th Cycle
A25
*L
*L
*L
*L
*L
*L
*L
NOTE : Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A8 is set to "Low" or "High" by the 00h or 01h Command.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
8
Column Address
Row Address
(Page Address)
K9F1208Q0B
K9F1208D0B
K9F1208U0B
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FLASH MEMORY
Product Introduction
The K9F1208X0B is a 528Mbit(553,648,218 bit) memory organized as 131,072 rows(pages) by 528 columns. Spare sixteen columns
are located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data
transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16
cells that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of two
NAND structured strings. A NAND structure consists of 16 cells. Total 135168 NAND cells reside in a block. The array organization is
shown in Figure 2. The program and read operations are executed on a page basis, while the erase operation is executed on a block
basis. The memory array consists of 4,096 separately erasable 16K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9F1208X0B.
The K9F1208X0B has addresses multiplexed into 8 I/O's. This scheme dramatically reduces pin counts and allows systems upgrades
to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by
bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch
Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. The 64M byte physical space requires 26
addresses, thereby requiring four cycles for byte-level addressing: column address, low row address and high row address, in that
order. Page Read and Page Program need the same four address cycles following the required command input. In Block Erase operation, however, only the three row address cycles are used. Device operations are selected by writing specific commands into the
command register. Table 1 defines the specific commands of the K9F1208X0B.
The device provides simultaneous program/erase capability up to four pages/blocks. By dividing the memory array into four 128Mbit
separate planes, simultaneous multi-plane operation dramatically increases program/erase performance by 4X while still maintaining
the conventional 512 byte structure.
The extended pass/fail status for multi-plane program/erase allows system software to quickly identify the failing page/block out of
selected multiple pages/blocks. Usage of multi-plane operations will be described further throughout this document.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
of the same plane without the need for transporting the data to and from the external buffer memory. Since the time-consuming burstreading and data-input cycles are removed, system performance for solid-state disk application is significantly increased.
The device includes one block sized OTP(One Time Programmable), which can be used to increase system security or to provide
identification capabilities. Detailed information can be obtained by contact with Samsung.
Table 1. Command Sets
Function
1st. Cycle
2nd. Cycle
3rd. Cycle
Read 1
00h/01h(1)
-
-
Read 2
50h
-
-
Read ID
90h
-
-
Reset
FFh
-
-
80h
10h
-
Page Program (True)
(2)
Acceptable Command
during Busy
O
80h
11h
-
Copy-Back Program(True)(2)
00h
8Ah
10h
Copy-Back Program(Dummy)(2)
03h
8Ah
11h
Block Erase
60h
D0h
-
60h----60h
D0h
-
70h
-
-
O
-
-
O
Page Program (Dummy)
Multi-Plane Block Erase
Read Status
Read Multi-Plane Status
(2)
71h
(3)
NOTE : 1. The 00h command defines starting address of the 1st half of registers.
The 01h command defines starting address of the 2nd half of registers.
After data access on the 2nd half of register by the 01h command, the status pointer is
automatically moved to the 1st half register(00h) on the next cycle.
2. Page Program(True) and Copy-Back Program(True) are available on 1 plane operation.
Page Program(Dummy) and Copy-Back Program(Dummy) are available on the 2nd,3rd,4th plane of multi plane operation.
3. The 71h command should be used for read status of Multi Plane operation.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
9
K9F1208Q0B
K9F1208D0B
K9F1208U0B
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FLASH MEMORY
Memory Map
The device is arranged in four 128Mbit memory planes. Each plane contains 1,024 blocks and 528 byte page registers. This allows it
to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks.
Figure 3. Memory Array Map
Plane 0
(1024 Block)
Block 0
Plane 2
(1024 Block)
Plane 1
(1024 Block)
Block 2
Block 1
Plane 3
(1024 Block)
Block 3
Page 0
Page 0
Page 0
Page 0
Page 1
Page 1
Page 1
Page 1
Page 30
Page 30
Page 30
Page 30
Page 31
Page 31
Page 31
Page 31
Block 4
Page 0
Block 6
Block 5
Block 7
Page 0
Page 0
Page 0
Page 1
Page 1
Page 1
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Block 4088
Block 4090
Block 4089
Block 4091
Page 0
Page 0
Page 0
Page 0
Page 1
Page 1
Page 1
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Block 4092
Block 4094
Block 4093
Block 4095
Page 0
Page 0
Page 0
Page 0
Page 1
Page 1
Page 1
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
528byte Page Registers
528byte Page Registers
528byte Page Registers
528byte Page Registers
10
K9F1208Q0B
K9F1208D0B
K9F1208U0B
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FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under Bias
Rating
Symbol
K9F1208X0B-XCB0
3.3V/2.65V DEVICE
VIN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
VCC
-0.2 to + 2.45
-0.6 to + 4.6
VCCQ
-0.2 to + 2.45
K9F1208X0B-XCB0
V
-0.6 to + 4.6
-10 to +125
TBIAS
K9F1208X0B-XIB0
Storage Temperature
Unit
1.8V DEVICE
°C
-40 to +125
TSTG
-65 to +150
°C
Ios
5
mA
K9F1208X0B-XIB0
Short Circuit Current
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F1208X0B-XCB0 :TA=0 to 70°C, K9F1208X0B-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9F1208Q0B(1.8V)
K9F1208D0B(2.65V)
K9F1208U0B(3.3V)
Min
Typ.
Max
Min
Typ.
Max
Min
Typ.
Max
Unit
Supply Voltage
VCC
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
VCCQ
1.70
1.8
1.95
2.4
2.65
2.9
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
0
0
0
V
11
K9F1208Q0B
K9F1208D0B
K9F1208U0B
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FLASH MEMORY
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
K9F1208X0B
Parameter
Symbol
Test Conditions
tRC=50ns, CE=VIL
IOUT=0mA
1.8V
Unit
2.65V
3.3V
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
-
8
15
-
10
20
-
10
20
Operating Sequential Read
Current
Program
ICC1
ICC2
-
-
8
15
-
10
20
-
10
20
Erase
ICC3
-
-
8
15
-
10
20
-
10
20
Stand-by Current(TTL)
ISB1
CE=VIH, WP=0V/VCC
-
-
1
-
-
1
-
-
1
Stand-by Current(CMOS)
ISB2
CE=VCC-0.2, WP=0V/VCC
-
10
50
-
10
50
-
10
50
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±10
-
-
±10
-
-
±10
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±10
-
-
±10
-
-
±10
2.0
-
2.0
-
-0.3
-
VCCQ
I/O pins
Input High Voltage
-0.4
VIH*
Except I/O pins
Input Low Voltage, All
inputs
VIL*
K9F1208Q0B :IOH=-100µA
Output High Voltage Level
VOH
K9F1208D0B :IOH=-100µA
K9F1208U0B :IOH=-400µA
VCC
-0.4
-0.3
-
VCCQ VCCQ
+0.3
-0.4
VCC
VCC
+0.3
-0.4
0.4
-0.3
-
VCCQ
+0.3
VCC
+0.3
0.5
mA
µA
VCCQ
+0.3
VCC
+0.3
0.8
V
VCCQ
-
-
-
-
0.1
3
4
-
-0.1
VCCQ
-
-
2.4
-
-
-
-
0.4
-
-
0.4
3
4
-
8
10
-
-0.4
K9F1208Q0B :IOL=100uA
Output Low Voltage Level
VOL
K9F1208D0B :IOL=100µA
K9F1208U0B :IOL=2.1mA
K9F1208Q0B :VOL=0.1V
Output Low Current(R/B)
IOL(R/B) K9F1208D0B :VOL=0.1V
K9F1208U0B :VOL=0.4V
NOTE : VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for durations of 20 ns or less.
12
mA
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
VALID BLOCK
Parameter
Valid Block Number
Symbol
Min
Typ.
Max
Unit
NVB
4,026
-
4,096
Blocks
NOTE :
1. The device may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program
factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase
cycles.
3. Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb memory space.
AC TEST CONDITION
(K9F1208X0B-XCB0 :TA=0 to 70°C, K9F1208X0B-XIB0:TA=-40 to 85°C
K9F1208Q0B : Vcc=1.70V~1.95V , K9F1208D0B : Vcc=2.4V~2.9V , K9F1208U0B : Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9F1208Q0B
K9F1208D0B
K9F1208U0B
0V to VccQ
0V to VccQ
0.4V to 2.4V
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
5ns
5ns
5ns
VccQ/2
VccQ/2
1.5V
K9F1208Q0B:Output Load (VccQ:1.8V +/-10%)
K9F1208D0B:Output Load (VccQ:2.65V +/-10%) 1 TTL GATE and CL=30pF 1 TTL GATE and CL=30pF 1 TTL GATE and CL=50pF
K9F1208U0B:Output Load (VccQ:3.0V +/-10%)
K9F1208U0B:Output Load (VccQ:3.3V +/-10%)
-
-
1 TTL GATE and CL=100pF
CAPACITANCE(TA=25°C, VCC=1.8V/2.65V/3.3V, f=1.0MHz)
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
Item
CI/O
VIL=0V
-
10
pF
Input Capacitance
CIN
VIN=0V
-
10
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
H
L
L
H
H
RE
WP
L
H
X
L
H
X
L
L
H
H
L
H
L
H
H
L
L
L
H
H
L
L
L
H
X
Data Output
L
L
L
H
H
X
During Read(Busy) on K9F1208X0B-Y,P or K9F1208U0B-V,F
X
X
X
X
H
X
During Read(Busy) on the devices except K9F1208X0B-Y,P and
K9F1208U0B-V,F
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
X
L
Write Protect
H
X
X
X
X
(1)
X
X
WE
Mode
Read Mode
Command Input
Address Input(4clock)
Write Mode
Command Input
Address Input(4clock)
Data Input
0V/VCC(2) Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
13
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
PROGRAM / ERASE CHARACTERISTICS
Parameter
Symbol
Min
Typ
Max
Program Time
tPROG
-
200
500
µs
Dummy Busy Time for Multi Plane Program
tDBSY
1
10
µs
-
1
cycle
-
-
2
cycles
-
2
3
ms
Main Array
Number of Partial Program Cycles
in the Same Page
Spare Array
Block Erase Time
-
Nop
tBERS
Unit
AC TIMING CHARACTERISTICS FOR COMMAND / ADDRESS / DATA INPUT
Parameter
Symbol
Min
Max
-
-
Unit
CLE setup Time
tCLS
0
0
0
-
ns
CLE Hold Time
tCLH
10
10
10
-
-
-
ns
CE setup Time
tCS
0
0
0
-
-
-
ns
CE Hold Time
tCH
10
10
10
-
-
-
ns
WE Pulse Width
tWP
25
25(1)
25(1)
-
-
-
ns
ALE setup Time
tALS
0
0
0
-
-
-
ns
ALE Hold Time
tALH
10
10
10
-
-
-
ns
Data setup Time
tDS
20
20
20
-
-
-
ns
Data Hold Time
tDH
10
10
10
-
-
-
ns
Write Cycle Time
tWC
45
45
45
-
-
-
ns
WE High Hold Time
tWH
15
15
15
-
-
-
ns
NOTE: 1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
14
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
AC CHARACTERISTICS FOR OPERATION
Parameter
Min
Symbol
Max
Unit
K9F1208Q0B K9F1208D0B K9F1208U0B K9F1208Q0B K9F1208D0B K9F1208U0B
Data Transfer from Cell to Register
tR
-
-
-
15
15
15
µs
ALE to RE Delay
tAR
10
10
10
-
-
-
ns
CLE to RE Delay
tCLR
10
10
10
-
-
-
ns
Ready to RE Low
tRR
20
20
20
-
-
-
ns
RE Pulse Width
tRP
25
25
25
-
-
-
ns
WE High to Busy
tWB
-
-
-
100
100
100
ns
Read Cycle Time
tRC
50
50
50
-
-
-
ns
RE Access Time
tREA
-
-
-
35
30
30
ns
CE Access Time
tCEA
-
-
-
45
45
45
ns
RE High to Output Hi-Z
tRHZ
-
-
-
30
30
30
ns
CE High to Output Hi-Z
tCHZ
-
-
-
20
20
20
ns
RE or CE High to Output hold
tOH
15
15
15
-
-
-
ns
RE High Hold Time
tREH
15
15
15
-
-
-
ns
tIR
0
0
0
-
-
-
ns
WE High to RE Low
tWHR
60
60
60
-
-
-
ns
Device resetting time(Read/Pro-
tRST
-
-
-
5/10/500(1)
5/10/500(1)
5/10/500(1)
µs
Output Hi-Z to RE Low
Parameter
K9F1208U0BY,V,P,F only
Symbol
Min
Max
Last RE High to Busy(at sequential read)
tRB
-
100
CE High to Ready(in case of interception by CE at read)
tCRY
-
CE High Hold Time(at the last serial read)(2)
tCEH
100
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
15
50 +tr(R/B)
-
Unit
ns
(3)
ns
ns
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
NAND Flash Technical Notes
Invalid Block(s)
Invalid blocks are defined as blocks that contain one or more invalid bits whose reliability is not guaranteed by Samsung. The information regarding the invalid block(s) is so called as the invalid block information. Devices with invalid block(s) have the same quality
level as devices with all valid blocks and have the same AC and DC characteristics. An invalid block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a select transistor. The system design
must be able to mask out the invalid block(s) via address mapping. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block, does not require Error Correction up to 1K program/erase cycles.
Identifying Invalid Block(s)
All device locations are erased(FFh) except locations where the invalid block(s) information is written prior to shipping. The invalid
block(s) status is defined by the 6th byte(X8 device) or 1st word(X16 device) in the spare area. Samsung makes sure that either the
1st or 2nd page of every invalid block has non-FFh(X8 device) or non-FFFFh(X16 device) data at the column address of 517(X8
device) or 256 and 261(X16 device). Since the invalid block information is also erasable in most cases, it is impossible to recover the
information once it has been erased. Therefore, the system must be able to recognize the invalid block(s) based on the original
invalid block information and create the invalid block table via the following suggested flow chart(Figure 4). Any intentional erasure of
the original invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
Create (or update)
Invalid Block(s) Table
No
*
Check "FFh" ?
Check "FFh" at the column address
517(X8 device) or 256 and 261(X16 device)
of the 1st and 2nd page in the block
Yes
No
Last Block ?
Yes
End
Figure 4. Flow chart to create invalid block table.
16
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block
replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Read back ( Verify after Program) --> Block Replacement
or ECC Correction
Single Bit Failure
Verify ECC -> ECC Correction
Write
Read
Detection and Countermeasure sequence
Erase Failure
ECC
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Program Flow Chart
If ECC is used, this verification
operation is not needed.
Start
Write 00h
Write 80h
Write Address
Write Address
Wait for tR Time
Write Data
Write 10h
Verify Data
No
*
Program Error
Read Status Register
Yes
Program Completed
I/O 6 = 1 ?
or R/B = 1 ?
*
Program Error
Yes
No
No
*
I/O 0 = 0 ?
Yes
17
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60h
Write 00h
Write Block Address
Write Address
Write D0h
Read Data
Read Status Register
ECC Generation
No
I/O 6 = 1 ?
or R/B = 1 ?
Reclaim the Error
No
Verify ECC
Yes
Yes
*
Erase Error
No
Page Read Completed
I/O 0 = 0 ?
Yes
Erase Completed
*
: If erase operation results in an error, map out
the failing block and replace it with another block.
Block Replacement
1st
∼
(n-1)th
{
nth
Block A
2
an error occurs.
(page)
1st
∼
(n-1)th
nth
Buffer memory of the controller.
{
Block B
1
(page)
* Step1
When an error happens in the nth page of the Block ’A’during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not further erase Block ’A’by creating an ’invalid Block’table or other appropriate scheme.
18
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Pointer Operation of K9F1208X0B(X8)
Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. ’00h’
command sets the pointer to ’A’area(0~255byte), ’01h’command sets the pointer to ’B’area(256~511byte), and ’50h’command sets
the pointer to ’C’ area(512~527byte). With these commands, the starting column address can be set to any of a whole
page(0~527byte). ’00h’or ’50h’is sustained until another address pointer command is inputted. ’01h’command, however, is effective
only for one operation. After any operation of Read, Program, Erase, Reset, Power_Up is executed once with ’01h’ command, the
address pointer returns to ’A’ area by itself. To program data starting from ’A’ or ’C’ area, ’00h’ or ’50h’ command must be inputted
before ’80h’ command is written. A complete read operation prior to ’80h’ command is not necessary. To program data starting from
’B’area, ’01h’command must be inputted right before ’80h’command is written.
Table 2. Destination of the pointer
Command
Pointer position
Area
00h
01h
50h
0 ~ 255 byte
256 ~ 511 byte
512 ~ 527 byte
1st half array(A)
2nd half array(B)
spare array(C)
"A" area
(00h plane)
"B" area
(01h plane)
256 Byte
256 Byte
"A"
"B"
"C" area
(50h plane)
16 Byte
"C"
Internal
Page Register
Pointer select
commnad
(00h, 01h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
(1) Command input sequence for programming ’A’ area
The address pointer is set to ’A’area(0~255), and sustained
Address / Data input
00h
80h
Address / Data input
10h
00h
’A’,’B’,’C’area can be programmed.
It depends on how many data are inputted.
80h
10h
’00h’command can be omitted.
(2) Command input sequence for programming ’B’ area
The address pointer is set to ’B’area(256~511), and will be reset to
’A’area after every program operation is executed.
Address / Data input
01h
80h
Address / Data input
10h
01h
’B’, ’C’area can be programmed.
It depends on how many data are inputted.
80h
10h
’01h’command must be rewritten before
every program operation
(3) Command input sequence for programming ’C’ area
The address pointer is set to ’C’area(512~527), and sustained
Address / Data input
50h
80h
Address / Data input
10h
50h
Only ’C’area can be programmed.
80h
’50h’command can be omitted.
19
10h
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528byte page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and reading
would provide significant savings in power consumption.
Figure 7. Program Operation with CE don’t-care.
CLE
CE don’t-care
WE
≈
≈
CE
ALE
I/OX
80h
Start Add.(4Cycle)
tCS
Data Input
tCH
Data Input
10h
tCEA
CE
CE
tREA
RE
tWP
WE
I/OX
out
Figure 8. Read Operation with CE don’t-care.
CLE
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held
low during tR
CE don’t-care
≈
CE
RE
ALE
tR
R/B
WE
I/OX
00h
Data Output(sequential)
Start Add.(4Cycle)
20
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
I/O
DATA
I/Ox
Data In/Out
I/O 0 ~ I/O 7
~528byte
Device
K9F1208X0B(X8 device)
Command Latch Cycle
CLE
tCLS
tCLH
tCS
tCH
CE
tWP
WE
tALS
tALH
ALE
tDH
tDS
Command
I/OX
Address Latch Cycle
tCLS
CLE
tWC
tCS
tWC
tWC
CE
tWP
tWP
tWP
tWP
WE
tWH
tALH tALS
tWH
tALH tALS
tALS
tWH
tALH tALS
tALH
ALE
tDS
I/OX
tDH
A0~A7
tDS
tDH
A9~A16
21
tDS
tDH
A17~A24
tDS
A25
tDH
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Input Data Latch Cycle
tCLH
CLE
tCH
CE
tWC
tALS
tWP
≈
ALE
tWP
tWP
WE
tWH
tDH
tDS
tDH
tDS
tDH
≈
tDS
I/Ox
DIN n
DIN 1
≈
DIN 0
Serial access Cycle after Read(CLE=L, WE=H, ALE=L)
tRC
≈
CE
tCHZ*
tREH
≈
tREA
tREA
tOH
tREA
RE
tRHZ*
tRHZ*
I/Ox
Dout
Dout
≈
tOH
Dout
≈
tRR
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
22
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Status Read Cycle
tCLR
CLE
tCLS
tCLH
tCS
CE
tCH
tWP
WE
tCEA
tCHZ
tOH
tWHR
RE
tDH
tDS
I/OX
tRHZ
tREA
tIR
tOH
Status Output
70h
READ1 OPERATION (READ ONE PAGE)
CLE
≈ ≈
1)
CE
tCEH
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held
low during tR
tCHZ
tOH
≈
tWC
WE
≈ ≈
tWB
ALE
tCRY
tAR
tR
tRHZ
tOH
≈
tRC
N Address
≈
RE
00h or 01h A0 ~ A7
A9 ~ A16
Column
Address
A17 ~ A24
A25
Page(Row)
Address
Busy
≈
R/B
X8 device : m = 528 , Read CMD = 00h or 01h
X16 device : m = 264 , Read CMD = 00h
Dout N
Dout N+1 Dout N+2
≈ ≈
I/OX
≈
tRR
Dout m
1)
tRB
1)
NOTES : 1) is only valid on K9F1208U0B-Y,P or K9F1208U0B-V,F
23
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Read1 Operation (Intercepted by CE)
CLE
≈ ≈
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held
low during tR
≈
CE
WE
≈ ≈
tWB
ALE
tCHZ
tOH
tAR
tRC
≈
tR
RE
I/OX
00h or 01h
A 0 ~ A7
A9 ~ A16
A17 ~ A24
A25
≈
tRR
Dout N
Dout N+1
Dout N+2
Page(Row)
Address
Column
Address
Busy
≈
R/B
Read2 Operation (Read One Page)
CLE
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held
low during tR
CE
WE
tR
tWB
tAR
ALE
≈
tRR
I/OX
50h
A 0 ~ A7
A9 ~ A16 A17 ~ A24
Dout
n+M
A25
R/B
≈
RE
n+m
Selected
Row
M Address
A0~A3 : Valid Address
A4~A7 : Don′t care
512
16
Start
address M
24
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Sequential Row Read Operation (Within a Block)
≈
CLE
≈ ≈
CE
WE
A25
Dout
N+1
Dout
N
≈
Ready
Busy
Busy
Dout
0
Dout
1
Dout
527
≈
≈
R/B
≈
≈
Dout
527
≈
A0 ~ A7 A9 ~ A16 A17 ~ A24
≈
00h
≈
I/OX
≈
RE
≈
≈
≈
≈
ALE
M
M+1
N
Output
Output
Page Program Operation
CLE
CE
≈
tWC
tWC
tWC
WE
tWB
tPROG
ALE
I/OX
80h
A0 ~ A7 A9 ~ A16 A17 ~ A24
Sequential Data Column
Input Command Address
Page(Row)
Address
A25
≈ ≈
RE
Din
Din
10h
N
527
1 up to 528 Byte Data Program
Command
Serial Input
25
I/O0
Read Status
Command
≈
R/B
70h
I/O0=0 Successful Program
I/O0=1 Error in Program
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
BLOCK ERASE OPERATION (ERASE ONE BLOCK)
CLE
CE
tWC
WE
tWB
tBERS
ALE
RE
I/OX
60h
A9 ~ A16 A17 ~ A24
A25
DOh
70h
I/O 0
Page(Row)
Address
Busy
R/B
Auto Block Erase Setup Command
Erase Command
26
Read Status
Command
I/O0=0 Successful Erase
I/O0=1 Error in Erase
27
R/B
I/OX
RE
ALE
WE
CE
CLE
Sequential Data
Input Command
80h
tWC
I/O0~7
R/B
Din
m
80h
A0 ~ A7 & A9 ~ A25
528 Byte Data
Address &
Data Input
11h
tDBSY
80h
Address &
Data Input
tDBSY :
typ. 1us
max. 10us
tDBSY
A0 ~ A7 & A9 ~ A25
528 Byte Data
tWB
11h
Program
1 up to 528 Byte Data Command
(Dummy)
Serial Input
Din
N
Max. three times repeatable
Page(Row)
Address
A25
Ex.) Four-Plane Page Program
Column
Address
A0 ~ A7 A9 ~ A16 A17 ~ A24
≈
≈ ≈
≈
≈ ≈
≈
≈
≈
≈
≈
11h
80h
A25
Din
N
A0 ~ A7 & A9 ~ A25
528 Byte Data
Address &
Data Input
11h
tDBSY
Last Plane Input & Program
A0 ~ A7 A9 ~ A16 A17 ~ A24
tDBSY
80h
≈
≈ ≈
tPROG
A0 ~ A7 & A9 ~ A25
528 Byte Data
Address &
Data Input
10h
Program Confirm
Command
(True)
80h
Din
527
tWB
≈
≈ ≈
≈
≈
≈
≈
≈
Multi-Plane Page Program Operation
71h
tPROG
10h
I/O
71h
Read Multi-Plane
Status Command
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Multi-Plane Block Erase Operation
CLE
CE
tWC
WE
tBERS
tWB
ALE
RE
I/OX
60h
A9 ~ A16 A17 ~ A24
A25
DOh
71h
I/O 0
Page(Row)
Address
Busy
R/B
Block Erase Setup Command
Erase Confirm Command
Read Multi-Plane
Status Command
Max. 4 times repeatable
* For Multi-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Four-Plane Block Erase Operation
tBERS
R/B
I/O0~7
60h
Address
60h
A9 ~ A25
60h
A9 ~ A25
60h
A9 ~ A25
28
A9 ~ A25
D0h
71h
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Read ID Operation
CLE
CE
WE
ALE
RE
tREA
I/OX
90h
Read ID Command
00h
ECh
Address. 1cycle
Maker Code
ID Defintition Table
90 ID : Access command = 90H
Description
1st Byte
2nd Byte
3rd Byte
4th Byte
Maker Code
Device Code
Must be don’t -cared
Supports Multi Plane Operation
29
Device
Code
A5h
C0h
Multi Plane Code
Device
Device Code
K9F1208Q0B
36h
K9F1208D0B
76h
K9F1208U0B
76h
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
≈ ≈ ≈ ≈
CLE
CE
tWC
WE
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held low during tR
tWB
tWB tPROG
≈ ≈
ALE
≈≈ ≈ ≈ ≈ ≈ ≈
Copy-Back Program Operation
A0~A7 A9~A16 A17~A24
Column
Address
R/B
A25
8Ah
A0~A7 A9~A16 A17~A24
Column
Address
Page(Row)
Address
Busy
A25
10h
70h
I/O0
Read Status
Command
Page(Row)
Address
Busy
≈
00h
≈
I/OX
≈
RE
≈
≈≈
tR
Copy-Back Data
Input Command
30
I/O0=0 Successful Program
I/O0=1 Error in Program
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command register along with four address cycles. Once the command is latched, it does not need to be written for the following page read operation.
Three types of operations are available : random read, serial page read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are transferred
to the data registers in less than 15µs(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the
output of R/B pin. CE must be held low while in busy for K9F1208U0B-YXB0 or K9F1208U0B-VXB0, while CE is don’t-care with
K9F1208X0B-GXB0 or K9F1208X0B-JXB0. If CE goes high before the device returns to Ready, the random read operation is interrupted and Busy returns to Ready as the defined by tCRY. Since the operation was aborted, the serial page read does not output valid
data. Once the data in a page is loaded into the registers, they may be read out in 50ns cycle time by sequentially pulsing RE. High to
low transitions of the RE clock output the data stating from the selected column address up to the last column address.
The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of 512
to 527 bytes may be selectively accessed by writing the Read2 command. Addresses A0 to A3 set the starting address of the spare
area while addresses A4 to A7 are ignored. The Read1 command(00h/01h) is needed to move the pointer back to the main area. Figures 7 to 10 show typical sequence and timings for each read operation.
Sequential Row Read is available only on K9F1208X0B-Y,P or K9F1208U0B-V,F :
After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting 15µs
again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. Unless the operation
is aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of
each page may be sequentially read. The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of
a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the
next block, read command and address must be given. Figures 9, 10 show typical sequence and timings for sequential row read
operation.
31
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Figure 7. Read1 Operation
CLE
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held low during tR
CE
WE
ALE
tR
R/B
RE
I/O0~7
00h
Data Output(Sequential)
Start Add.(4Cycle)
A0 ~ A7 & A9 ~ A25
(00h Command)
(01h Command)
1)
1st half array
Main array
Data Field
Spare Field
NOTE: 1) After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half
array (00h) at next cycle.
01h command is only available on X8 device(K9F1208X0B).
32
2st half array
Data Field
Spare Field
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Figure 8. Read2 Operation
CLE
On K9F1208U0B-Y,P or K9F1208U0B-V,F
CE must be held low during tR
CE
WE
ALE
tR
R/B
RE
50h
I/OX
Data Output(Sequential)
Start Add.(4Cycle)
Spare Field
A0 ~ A7 & A9 ~ A25
Main array
Data Field
Spare Field
I/OX
tR
tR
R/B
00h
Start Add.(4Cycle)
01h
A0 ~ A7 & A9 ~ A25
Data Output
1st
( 00h Command)
1st half array
and K9F1208U0B-V,F valid within a block)
≈
Figure 9. Sequential Row Read1 Operation (only for K9F1208U0B-Y,P
tR
Data Output
Data Output
2nd
(528 Byte)
Nth
(528 Byte)
( 01h Command)
2nd half array
1st half array
2nd half array
1st
2nd
Nth
Block
Data Field
1st
2nd
Nth
Spare Field
Data Field
Spare Field
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
33
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
I/OX
tR
tR
R/B
50h
≈
Figure 10. Sequential Row Read2 Operation (only for K9F1208U0B-Y,P and K9F1208U0B-V,F valid within a block)
Start Add.(4Cycle)
Data Output
1st
A0 ~ A3 & A9 ~ A25
tR
Data Output
Data Output
2nd
(16Byte)
Nth
(16Byte)
(A4 ~ A7 :
Don’t Care)
1st
Block
Nth
Data Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte or consecutive bytes
up to 528 bytes, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 1 for main array and 2 for spare array. The addressing may be done in
any random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be
loaded into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell. Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation, please refer to the
attached technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address input and
then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal write state control automatically executes the algorithms and timings necessary for program and
verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command
may be entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle
by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are
valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 11).
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in
Read Status command mode until another valid command is written to the command register.
Figure 11. Program & Read Status Operation
tPROG
R/B
I/O0~7
80h
Address & Data Input
10h
70h
A0 ~ A7 & A9 ~ A25
528 Byte Data
I/O0
Fail
34
Pass
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
BLOCK ERASE
The Erase operation is done on a block(16K Byte) basis. Block address loading is accomplished in three cycles initiated by an Erase
Setup command(60h). Only address A14 to A25 is valid while A9 to A13 is ignored. The Erase Confirm command(D0h) following the
block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command
ensures that memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 12 details the sequence.
Figure 12. Block Erase Operation
tBERS
R/B
I/OX
60h
Address Input(3Cycle)
Pass
I/O0
70h
D0h
Block Add. : A14 ~ A25
Fail
Multi-Plane Page Program
Multi-Plane Page Program is an extension of Page Program, which is executed for a single plane with 528 byte page registers. Since
the device is equipped with four memory planes, activating the four sets of 528 byte page registers enables a simultaneous programming of four pages. Partial activation of four planes is also permitted.
After writing the first set of data up to 528 byte into the selected page register, Dummy Page Program command (11h) instead of
actual Page Program (10h) is inputted to finish data-loading of the current plane and move to the next plane. Since no programming
process is involved, R/B remains in Busy state for a short period of time(tDBSY). Read Status command (standard 70h or alternate
71h) may be issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). Then the next set
of data for one of the other planes is inputted with the same command and address sequences. After inputting data for the last plane,
actual True Page Program (10h) instead of dummy Page Program command (11h) must be followed to start the programming process. The operation of R/B and Read Status is the same as that of Page Program. Since maximum four pages are programmed
simultaneously, pass/fail status is available for each page when the program operation completes. The extended status bits (I/O1
through I/O 4) are checked by inputting the Read Multi-Plane Status Register. Status bit of I/O 0 is set to "1" when any of the pages
fails. Multi-Plane page Program with "01h" pointer is not supported, thus prohibited.
Figure 13. Four-Plane Page Program
tDBSY
R/B
I/OX
80h
Address &
11h
Data Input
A0 ~ A7 & A9 ~ A25
tDBSY
80h
Address &
Data Input
tPROG
tDBSY
11h
80h
11h
80h
Address &
Data Input
11h
80h
11h
80h
Address &
Data Input
10h
528 bytes
80h
11h
Data
Input
80h
10h
Plane 3
(1024 Block)
Plane 0
(1024 Block)
Plane 1
(1024 Block)
Block 0
Block 1
Block 2
Block 3
Block 4
Block 5
Block 6
Block 7
Block 4088
Block 4092
Block 4089
Block 4093
Block 4090
Block 4094
Plane 2
(1024 Block)
35
Block 4091
Block 4095
71h
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Restriction in addressing with Multi Plane Page Program
While any block in each plane may be addressable for Multi-Plane Page Program, the five least significant addresses(A9-A13) for the
selected pages at one operation must be the same. Figure 14 shows an example where 2nd page of each addressed block is
selected for four planes. However, any arbitrary sequence is allowed in addressing multiple planes as shown in Figure15.
Figure 14. Multi-Plane Program & Read Status Operation
Block 0
Plane 3
(1024 Block)
Plane 2
(1024 Block)
Plane 1
(1024 Block)
Plane 0
(1024 Block)
Block 2
Block 1
Block 3
Page 0
Page 0
Page 0
Page 0
Page 1
Page 1
Page 1
Page 1
Page 30
Page 30
Page 31
Page 30
Page 30
Page 31
Page 31
Page 31
Figure 15. Addressing Multiple Planes
80h
Plane 2
11h
Plane 0
80h
80h
11h
Plane3
11h
80h
Plane 1
10h
Figure 16. Multi-Plane Page Program & Read Status Operation
tPROG
R/B
Last Plane input
I/O0~7
Address & Data Input
80h
10h
Pass
I/O
71h
A0 ~ A7 & A9 ~ A25
528 bytes
Fail
Multi-Plane Block Erase
Basic concept of Multi-Plane Block Erase operation is identical to that of Multi-Plane Page Program. Up to four blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command followed by three
address cycles) may be repeated up to four times for erasing up to four blocks. Only one block should be selected from each plane.
The Erase Confirm command initiates the actual erasing process. The completion is detected by analyzing R/B pin or Ready/Busy
status (I/O 6). Upon the erase completion, pass/fail status of each block is examined by reading extended pass/fail status(I/O 1
through I/O 4).
Figure 17. Four Block Erase Operation
tBERS
R/B
I/OX
60h
Address
(3 Cycle)
60h
Address
(3 Cycle)
60h
Address
(3 Cycle)
60h
Address
(3 Cycle)
D0h
71h
I/O
A0 ~ A7 & A9 ~ A25
Fail
36
Pass
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Copy-Back Program
The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the plane to another page within
the same plane without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of
the block also need to be copied to the newly assigned free block. The operation for performing a copy-back program is a sequential
execution of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read operation with "00h" command and the address of the source page moves the whole 528byte data into the internal page registers. As soon
as the device returns to Ready state, Page-Copy Data-input command (8Ah) with the address cycles of destination page followed
may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Copy-Back Program
operation is allowed only within the same memory plane. Once the Copy-Back Program is finished, any additional partial page programming into the copied pages is prohibited before erase. A14 and A15 must be the same between source and target page.
Figure18 shows the command sequence for single plane operation. "When there is a program-failure at Copy-Back operation,
error is reported by pass/fail status. But if the soure page has a bit error for charge loss, accumulated copy-back operations
could also accumulate bit errors. For this reason, two bit ECC is recommended for copy-back operation."
Figure 18. One Page Copy-Back program Operation
tR
tPROG
R/B
I/OX
00h
Add.(4Cycles)
A0 ~ A7 & A9 ~ A25
Source Address
8Ah
Add.(4Cycles)
A0 ~ A7 & A9 ~ A25
Destination Address
37
10h
70h
I/O0
Fail
Pass
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Multi-Plane Copy-Back Program
Multi-Plane Copy-Back Program is an extension of one page Copy-Back Program into four plane operation. Since the device is
equipped with four memory planes, activating the four sets of 528 bytes page registers enables a simultaneous Multi-Plane CopyBack programming of four pages. Partial activation of four planes is also permitted.
First, normal read operation with the "00h"command and address of the source page moves the whole 528 byte data into internal
page buffers. Any further read operation for transferring the addressed pages to the corresponding page register must be executed
with "03h" command instead of "00h" command. Any plane may be selected without regard to "00h" or "03h". Up to four planes may
be addressed. Data moved into the internal page registers are loaded into the destination plane addresses. After the input of command sequences for reading the source pages, the same procedure as Multi-Plane Page programming except for a replacement
address command with "8Ah" is executed. Since no programming process is involved during data loading at the destination plane
address , R/B remains in Busy state for a short period of time(tDBSY). Read Status command (standard 70h or alternate 71h) may be
issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). After inputting data for the last
plane, actual True Page Program (10h) instead of dummy Page Program command (11h) must be followed to start the programming
process. The operation of R/B and Read Status is the same as that of Page Program. Since maximum four pages are programmed
simultaneously, pass/fail status is available for each page when the program operation completes. No pointer operation is supported
with Multi-Plane Copy-Back Program. Once the Multi-Plane Copy-Back Program is finished, any additional partial page programming into the copied pages is prohibited before erase once the Multi-Plane Copy-Back Program is finished.
Figure 19. Four-Plane Copy-Back Program
Max Three Times Repeatable
Source
Address
Input
00h
Plane 0
(1024 Block)
03h
03h
03h
Plane 3
(1024 Block)
Plane 2
(1024 Block)
Plane 1
(1024 Block)
Block 0
Block 4
Block 1
Block 5
Block 2
Block 3
Block 6
Block 7
Block 4088
Block 4092
Block 4089
Block 4093
Block 4090
Block 4094
Block 4091
Block 4095
Max Three Times Repeatable
8Ah
11h
8Ah
11h
8Ah
11h
8Ah
10h
Destination
Address
Input
Plane 3
(1024 Block)
Plane 0
(1024 Block)
Plane 1
(1024 Block)
Block 0
Block 1
Block 2
Block 3
Block 4
Block 5
Block 6
Block 7
Block 4088
Block 4092
Block 4089
Block 4093
Block 4090
Block 4094
38
Plane 2
(1024 Block)
Block 4091
Block 4095
I/OX
R/B
00h
03h
tR
A0 ~ A7 & A9 ~ A25
Source Address
Add.( 4Cyc.)
03h
Add.( 4Cyc.)
tR
8Ah
tDBSY
≈
≈
A0 ~ A7 & A9 ~ A25
Source Address
≈
≈
Add.(4Cyc.)
11h
tDBSY
A0 ~ A7 & A9 ~ A25
Destination Address
8Ah
8Ah
Max. 4 times (4 Cycle Destination Address Input) repeatable
tDBSY : Typical 1us, Max 10us
A0 ~ A7 & A9 ~ A25
Destination Address
Add.(4Cyc.) 11h
≈
≈
Max. 4 times ( 4 Cycle Source Address Input) repeatable
tR : Normal Read Busy
A0 ~ A7 & A9 ~ A25
Source Address
Add.(4Cyc.)
tR
Figure 20. Four-Plane Copy-Back Page Program (Continued)
10h
A0 ~ A7 & A9 ~ A25
Destination Address
Add.(4Cyc.)
tPROG
71h
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
39
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
For Read Status of Multi Plane Program/Erase, the Read Multi-Plane Status command(71h) should be used to find out whether
multi-plane program or erase operation is completed, and whether the program or erase operation is completed successfully. The
pass/fail status data must be checked only in the Ready condition after the completion of Multi-Plane program or erase operation.
Table4. Read Staus Register Definition
I/O No.
Status
Definition by 70h Command
I/O 0
Total Pass/Fail
I/O 1
Plane 0 Pass/Fail
Must be don’t -cared
Pass : "0"(2)
Fail : "1"
I/O 2
Plane 1 Pass/Fail
Must be don’t -cared
(2)
Fail : "1"
I/O 3
Plane 2 Pass/Fail
Must be don’t -cared
(2)
Pass : "0"
Fail : "1"
I/O 4
Plane 3 Pass/Fail
Must be don’t -cared
Pass : "0"(2)
Fail : "1"
I/O 5
Reserved
Must be don’t -cared
Must be don’t-cared
I/O 6
Device Operation
I/O 7
Write Protect
Pass : "0"
Fail : "1"
Pass : "0"(1)
Pass : "0"
Busy : "0"
Protected : "0"
Definition by 71h Command
Ready : "1"
Not Protected : "1"
Busy : "0"
Protected : "0"
Fail : "1"
Ready : "1"
Not Protected : "1"
NOTE : 1. I/O 0 describes combined Pass/Fail condition for all planes. If any of the selected multiple pages/blocks fails in Program/
Erase operation, it sets "Fail" flag.
2. The pass/fail status applies only to the corresponding plane.
40
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code, Reserved(A5h), Multi plane operation
code(C0h) respectively. A5h must be don’t-cared. C0h means that device supports Multi Plane operation. The command register
remains in Read ID mode until further commands are issued to it. Figure 21 shows the operation sequence.
Figure 21. Read ID Operation 1
CLE
tCEA
CE
WE
tAR
ALE
RE
I/O0~7
tWHR
90h
tREA
00h
ECh
Address. 1cycle
Maker code
Device
Code
A5h
Device code
Multi-Plane code
Device
Device Code
K9F1208Q0B
36h
K9F1208D0B
76h
K9F1208U0B
76h
41
C0h
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 22 below.
Figure 22. RESET Operation
tRST
R/B
I/O0~7
FFh
Table5. Device Status
Operation Mode
After Power-up
After Reset
Read 1
Waiting for next command
42
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 23). Its value can be
determined by the following guidance.
Rp
VCC
ibusy
1.8V device - VOL : 0.1V, VOH : VccQ-0.1V
2.65V device - VOL : 0.4V, VOH : VccQ-0.4V
3.3V device - VOL : 0.4V, VOH : 2.4V
Ready Vcc
R/B
open drain output
VOH
CL
VOL
Busy
tf
GND
Device
Figure 23. Rp vs tr ,tf & Rp vs ibusy
43
tr
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Ibusy
300n
200n
1.7
2m
tr
100n
3m
30
0.85
120
90
60
0.57
1.7
tf
1K
1.7
1.7
2K
3K
Rp(ohm)
Ibusy [A]
tr,tf [s]
@ Vcc = 1.8V, Ta = 25°C , CL = 30pF
1m
0.43
1.7
4K
300n
3m
2.3
Ibusy
200n
100n
2m
1.1
30
2.3
tr
tf
1K
90
60
0.75
2.3
2.3
2K
Ibusy [A]
tr,tf [s]
@ Vcc = 2.65V, Ta = 25°C , CL = 30pF
120
1m
2.3
0.55
4K
3K
Rp(ohm)
@ Vcc = 3.3V, Ta = 25°C , CL = 100pF
tr,tf [s]
Ibusy
300n
300
3m
1.2
200
0.8
2m
3.6 tf
3.6
3.6
3.6
1K
2K
3K
Rp(ohm)
4K
200n
tr
100n
100
0.6
Rp value guidance
Rp(min, 1.8V part) =
Rp(min, 2.65V part) =
Rp(min, 3.3V part) =
1.85V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
=
2.5V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
=
3mA + ΣIL
3.2V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
3mA + ΣIL
=
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
44
8mA + ΣIL
1m
Ibusy [A]
400
2.4
K9F1208Q0B
K9F1208D0B
K9F1208U0B
Advance
FLASH MEMORY
Data Protection & Power-up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hardware protection and is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10µs is
required before internal circuit gets ready for any command sequences as shown in Figure 24. The two step command sequence for
program/erase provides additional software protection.
Figure 24. AC Waveforms for Power Transition
≈
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
High
≈
VCC
WE
10µs
≈
≈
WP
45
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V