K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
K9K2G08X0A
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Document Title
256M x 8 Bit NAND Flash Memory
Revision History
Revision No
History
Draft Date
Remark
0.0
1. Initial issue
May. 31. 2004
Advance
0.1
1. Technical note is changed
2. Notes of AC timing characteristics are added
3. The description of Copy-back program is changed
4. TSOP package is deleted
Oct. 25. 2004
Preliminary
0.2
1. CE access time : 23ns->35ns (p.9)
Feb. 14. 2005
0.3
1. The value of tREA is changed. (18ns->20ns)
2. EDO mode is added.
May
4 2005
May
6 2005
0.4
1.0
1. The flow chart to creat the initial invalid block table is changed.
1. 1.8V FBGA spec is merged
2. 3.3V FBGA package is added
3. FBGA package size is changed to 9.5 x 12
4. Leaded part is deleted
Feb. 1 2006
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
2
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
256M x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
K9K2G08U0A-F
2.7 ~ 3.6V
X8
WSOP1
K9K2G08X0A-J
1.65 ~ 1.95V
X8
FBGA
FEATURES
• Voltage Supply
- 2.7 V ~3.6 V
- 1.65V ~ 1.95V
• Organization
- Memory Cell Array
- (256M + 8,192K)bit x 8bit
- Data Register
- (2K + 64)bit x8bit
• Automatic Program and Erase
- Page Program
- (2K + 64)Byte
- Block Erase
- (128K + 4K)Byte
• Page Read Operation
- Page Size
- 2K-Byte
- Random Read : 25µs(Max.)
- Serial Access : 50ns(Min.)
• Fast Write Cycle Time
- Program time : 300µs(Typ.)
- Block Erase Time : 2ms(Typ.)
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
• Command Register Operation
• Unique ID for Copyright Protection
• Package :
- K9K2G08U0A-FIB0
48 - Pin WSOP I (12x17x0.7mm)- Pb-free Package
- K9K2G08X0A-JCB0/JIB0
63- Ball FBGA (9.5x12) - Pb-free Package
GENERAL DESCRIPTION
Offered in 256Mx8bit the K9K2G08X0A is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost-effective solution
for the solid state mass storage market. A program operation can be performed in typical 300µs on the 2112byte page and an erase
operation can be performed in typical 2ms on a 128K-byte block. Data in the data page can be read out at 50ns cycle time per byte.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all
program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the
write-intensive systems can take advantage of the K9K2G08X0A′s extended reliability of 100K program/erase cycles by providing
ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2G08X0A is an optimum solution for large nonvolatile
storage applications such as solid state file storage and other portable applications requiring non-volatility.
3
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9K2G08U0A-FIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
N.C
N.C
DNU
N.C
I/O7
I/O6
I/O5
I/O4
N.C
DNU
N.C
Vcc
Vss
N.C
DNU
N.C
I/O3
I/O2
I/O1
I/O0
N.C
DNU
N.C
N.C
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
0.70 MAX
0.58±0.04
15.40±0.10
#48
#24
#25
0.20
0.50TYP
(0.50±0.06)
12.40MAX
12.00±0.10
+0.07
-0.03
0.16
+0.07
-0.03
#1
0°~
0.10 +0.075
-0.035
(0.01Min)
8°
0.45~0.75
17.00±0.20
4
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
PIN CONFIGURATION (FBGA)
K9F1G08X0A-JCB0/JIB0
1
2
3
4
5
6
N.C N.C
N.C N.C
A
B
C
D
E
F
G
H
N.C
N.C N.C
/WP
ALE
Vss
/CE
/WE
R/B
NC
/RE
CLE
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
I/O0
NC
NC
NC
Vcc
NC
I/O1
NC
Vcc
I/O5
I/O7
Vss
I/O2
I/O3 I/O4
I/O6
Vss
N.C N.C
N.C N.C
N.C N.C
N.C N.C
Top View
5
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
PACKAGE DEMENSIONS(FBGA)
Top View
Bottom View
#A1 INDEX MARK(OPTIONAL)
9.50±0.10
0.80 x 9= 7.20
A
0.80 x 5= 4.00
9.50±0.10
6
5
0.80
4
3
2
B
1
(Datum A)
0.80
#A1
A
D
2.80
E
F
G
H
63-∅0.45±0.05
∅ 0.20 M A B
0.25(Min.)
Side View
12.00±0.10
0.10MAX
0.45±0.05
6
1.20(Max)
2.00
12.00±0.10
0.80 x 7= 5.60
12.00±0.10
C
0.80 x 11= 8.80
B
(Datum B)
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
PIN DESCRIPTION
Pin Name
Pin Function
I/O0 ~ I/O7
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The
I/O pins float to high-z when the chip is deselected or when the outputs are disabled.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CE
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase opertion. Regarding CE control during read
operation, refer to ’Page read’ section of Device operation .
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
R/B
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output
and does not float to high-z condition when the chip is deselected or when outputs are disabled.
Vcc
POWER
VCC is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
NOTE:
1. Connect all VCC and VSS pins of each device to common power supply outputs.
2. Do not leave VCC or VSS disconnected.
7
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Figure 1. Functional Block Diagram
VCC
VSS
A12 - A28
X-Buffers
Latches
& Decoders
2048M + 64M Bit
NAND Flash
ARRAY
A0 - A11
Y-Buffers
Latches
& Decoders
(2048 + 64)Byte x 131072
Data Register & S/A
Y-Gating
Command
Command
Register
CE
RE
WE
VCC
VSS
I/O Buffers & Latches
Control Logic
& High Voltage
Generator
Output
Driver
Global Buffers
I/0 0
I/0 7
CLE ALE WP
Figure 2 Array Organization
1 Block = 64 Pages
(128K + 4k) Byte
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 2048 Blocks
= 2112 Mbits
128K Pages
(=2,048 Blocks)
8 bit
2K Bytes
64 Bytes
I/O 0 ~ I/O 7
Page Register
2K Bytes
64 Bytes
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A8
A9
A10
A11
*L
*L
*L
*L
Column Address
Column Address
3rd Cycle
A12
A13
A14
A15
A16
A17
A18
A19
Row Address
4th Cycle
A20
A21
A22
A23
A24
A25
A26
A27
Row Address
5th Cycle
A28
*L
*L
*L
*L
*L
*L
*L
Row Address
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than required.
8
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Product Introduction
The K9K2G08X0A is a 2112Mbit(2,214,592,512 bit) memory organized as 131,072 rows(pages) by 2112x8 columns. Spare 64 columns are located from column address of 2048~2111. A 2112-byte data register is connected to memory cell arrays for accommodating data transfer between the I/O buffers and memory cells during page read and page program operations. The memory array is
made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block
consists of two NAND structures. A NAND structure consists of 32 cells. Total 135,168 NAND cells reside in a block. The program and
read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory array consists of
2048 separately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the K9K2G08X0A.
The K9K2G08X0A has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades
to future densities by maintaining consistency in system board design. Command, address and data are all written through I/O's by
bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch
Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some commands require one bus cycle. For
example, Reset Command, Status Read Command and etc require just one cycle bus. Some other commands, like Page Read, Block
Erase and Page Program, require two cycles: one cycle for setup and the other cycle for execution. The 264M byte physical space
requires 29 addresses, thereby requiring five cycles for addressing: 2 cycles of column address, 3 cycles of row address, in that order.
Page Read and Page Program need the same five address cycles following the required command input. In Block Erase operation,
however, only the three row address cycles are used. Device operations are selected by writing specific commands into the command
register. Table 1 defines the specific commands of the K9K2G08X0A.
Table 1. Command Sets
1st. Cycle
2nd. Cycle
Read
Function
00h
30h
Read for Copy Back
00h
35h
Read ID
90h
-
Reset
FFh
-
Page Program
80h
10h
Cache Program
80h
15h
Copy-Back Program
85h
10h
Block Erase
60h
D0h
Random Data Input*1
85h
-
Random Data Output*1
05h
E0h
Read Status
70h
Acceptable Command during Busy
O
O
NOTE : 1. Random Data Input/Output can be executed in a page.
2. Cache program and Copy-Back program are supported only with 3.3V device.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
9
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Temperature Under
Bias
Storage Temperature
Rating
Symbol
1.8V DEVICE
3.3V DEVICE
VIN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
VCC
-0.6 to + 2.45
-0.6 to + 4.6
K9K2G08X0A-XCB0
K9K2G08X0A-XCB0
K9K2G08X0A-XJIB0
V
-10 to +125
TBIAS
K9K2G08X0A-XIB0
Unit
°C
-40 to +125
TSTG
-65 to +150
°C
Ios
5
mA
Short Circuit Current
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC,+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, :TA=0 to 70°C, K9K2G08X0A-XIB0:TA=-40 to 85°C)
Parameter
Symbol
K9K2G08R0A(1.8V)
K9K2G08U0A(3.3V)
Min
Typ.
Max
Min
Typ.
Max
Unit
Supply Voltage
VCC
1.65
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
0
0
0
V
DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
Parameter
Page Read with
OperatSerial Access
ing
Current
Program
Erase
Stand-by Current(TTL)
Stand-by Current(CMOS)
Symbol
Test Conditions
ICC1
K9K2G08R0A(1.8V)
K9K2G08U0A(3.3V)
Min
Typ
Max
Min
Typ
Max
tRC=50ns, (30ns with 3.3V device)
CE=VIL
IOUT=0mA
-
10
20
-
10
30
ICC2
-
-
10
20
-
10
30
ICC3
-
-
10
20
-
10
30
-
-
1
-
-
1
-
20
100
-
20
100
ISB1
ISB2
CE=VIH, WP=0V/VCC
CE=VCC-0.2,
WP=0V/VCC
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
±20
-
-
±10
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
±20
-
-
±10
Input High Voltage
VIH
-
0.8xVcc
-
Vcc+0.3
0.8xVcc
-
Vcc+0.3
Input Low Voltage, All
inputs
VIL
-
-0.3
-
0.2xVcc
-0.3
-
0.2xVcc
Vcc-0.1
-
-
2.4
-
-
-
-
0.1
-
-
0.4
3
4
-
8
10
-
Output High Voltage
Level
VOH
Output Low Voltage Level
VOL
Output Low Current(R/B)
IOL(R/B)
K9K2G08R0A: IOH=-100µA
K9K2G08U0A: IOH=-400µA
K9K2G08R0A: IOL=100mA
K9K2G08U0A: IOL=2.1mA
K9K2G08R0A: VOL=0.1V
K9K2G08U0A: VOL=0.4V
10
Unit
mA
µA
V
mA
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
VALID BLOCK
Parameter
Symbol
Min
Typ.
Max
Unit
NVB
2008
-
2048
Blocks
Valid Block Number
NOTE :
1. The K9K2G08X0A may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase
or program factory-marked bad blocks. Refer to the attached technical notes for appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block and does not require Error Correction up to 1K Program/
Earase cycles..
AC TEST CONDITION
(K9K2G08X0A-XCB0 :TA=0 to 70°C, K9K2G08X0A-XIB0:TA=-40 to 85°C
K9K2G08R0A : Vcc=1.65V~1.95V, K9K2G08U0A : Vcc=2.7V~3.6Vunless otherwise noted)
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
K9K2G08R0A
K9K2G08U0A
0V to Vcc
0V to Vcc
5ns
5ns
Vcc/2
Vcc/2
1 TTL GATE and CL=30pF
1 TTL GATE and CL=50pF
CAPACITANCE(TA=25C, VCC=1.8V/3.3V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
CI/O
VIL=0V
-
20
pF
Input Capacitance
CIN
VIN=0V
-
20
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
ALE
CE
RE
WP
H
L
L
WE
H
X
L
H
L
H
X
Mode
Read Mode
Command Input
Address Input(5clock)
H
L
L
H
H
L
H
L
H
H
L
L
L
H
H
Data Input
L
L
L
H
X
Data Output
X
X
X
X
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
Write Mode
CC(2)
Command Input
Address Input(5clock)
Stand-by
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Program Time
tPROG
-
200
700
µs
Dummy Busy Time for Cache Program
tCBSY*2
3
700
µs
-
-
4
cycles
-
-
4
cycles
-
2
3
ms
Number of Partial Program Cycles
in the Same Page
Block Erase Time
*1
Main Array
Spare Array
Nop
tBERS
Unit
NOTE : 1.Typical program time is defined as the time within which more than 50% of whole pages are programmed at Vcc of 3.3V and 25°C
2. Max. time of tCBSY depends on timing between internal program completion and data in
11
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
Min
Max
Unit
K9K2G08R0A
K9K2G08U0A
K9K2G08R0A
K9K2G08U0A
tCLS*1
25
15
-
-
CLE Hold Time
tCLH
10
5
-
-
ns
CE setup Time
tCS*1
35
20
-
-
ns
CE Hold Time
tCH
10
5
-
-
ns
WE Pulse Width
tWP
25
15
-
-
ns
ALE setup Time
tALS*1
25
15
-
-
ns
ALE Hold Time
tALH
10
5
-
-
ns
Data setup Time
tDS*1
20
15
-
-
ns
Data Hold Time
tDH
10
5
-
-
ns
Write Cycle Time
tWC
45
30
-
-
ns
CLE setup Time
WE High Hold Time
Address to Data Loading Time
ns
tWH
15
10
-
-
ns
tADL*2
100*2
100*2
-
-
ns
NOTE : 1. The transition of the corresponding control pins must occur only once while WE is held low.
2. tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
3. For cache program operation, the whole AC Charcateristics must be same as that of K9K2G08R0A.
AC Characteristics for Operation
Parameter
Symbol
Min
Max
Unit
K9K2G08R0A
K9K2G08U0A
K9K2G08R0A
K9K2G08U0A
tR
-
-
25
25
µs
ALE to RE Delay
tAR
10
10
-
-
ns
CLE to RE Delay
tCLR
10
10
-
-
ns
Ready to RE Low
tRR
20
20
-
-
ns
RE Pulse Width
tRP
25
15
-
-
ns
Data Transfer from Cell to Register
WE High to Busy
tWB
-
-
100
100
ns
Read Cycle Time
tRC
50
30
-
-
ns
RE Access Time
tREA
-
-
30
20
ns
CE Access Time
tCEA
-
-
45
35
ns
RE High to Output Hi-Z
tRHZ
-
-
30
30
ns
CE High to Output Hi-Z
tCHZ
-
-
20
20
ns
RE or CE High to Output hold
tOH
15
15
-
-
ns
RE High Hold Time
tREH
15
10
-
-
ns
tIR
0
0
-
-
ns
WE High to RE Low
tWHR
60
60
-
-
ns
Device Resetting Time (Read/Program/Erase)
tRST
-
-
5/10/500*1
5/10/500*1
µs
Output Hi-Z to RE Low
NOTE: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. For cache program operation, the whole AC Charcateristics must be same as that of K9K2G08R0A.
12
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is so called as the initial invalid block information. Devices with initial invalid
block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid
block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a
select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is
placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction up to 1K Program/Erase
cycles.
Identifying Initial Invalid Block(s)
All device locations are erased except locations where the initial invalid block(s) information is written prior to shipping. The initial
invalid block(s) status is defined by the 1st byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every initial
invalid block has non-FFh data at the column address of 2048. Since the initial invalid block information is also erasable in most
cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial
invalid block(s) based on the initial invalid block information and create the initial invalid block table via the following suggested flow
chart(Figure 3). Any intentional erasure of the initial invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
No
Create (or update)
Initial Invalid Block(s) Table
*
Check "FFh" at the column address
2048 of the 1st and 2nd page in the block
Check "FFh ?
Yes
No
Last Block ?
Yes
End
Figure 3. Flow chart to create initial invalid block table.
13
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the block failure rate.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read
failure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be
employed. To improve the efficiency of memory space, it is recommended that the read failure due to single bit error should be
reclaimed by ECC without any block replacement. The block failure rate in the qualification report does not include those reclaimed
blocks.
Failure Mode
Write
Read
ECC
Detection and Countermeasure sequence
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Single Bit Failure
Verify ECC -> ECC Correction
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Program Flow Chart
Start
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
I/O 6 = 1 ?
or R/B = 1 ?
*
Program Error
No
Yes
No
I/O 0 = 0 ?
Yes
Program Completed
*
14
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60h
Write 00h
Write Block Address
Write Address
Write D0h
Write 30h
Read Status Register
Read Data
ECC Generation
No
I/O 6 = 1 ?
or R/B = 1 ?
Reclaim the Error
Yes
*
No
Erase Error
No
Verify ECC
Yes
I/O 0 = 0 ?
Page Read Completed
Yes
Erase Completed
*
: If erase operation results in an error, map out
the failing block and replace it with another block.
Block Replacement
1st
∼
(n-1)th
nth
{
Block A
1
an error occurs.
(page)
1st
∼
(n-1)th
nth
Buffer memory of the controller.
{
Block B
2
(page)
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
15
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most significant bit) pages of the block. Random page address programming is prohibited.
Page 63
(64)
Page 63
:
Page 31
(32)
Page 2
Page 1
Page 0
(3)
(2)
(1)
:
Page 31
:
(1)
:
Page 2
Page 1
Page 0
Data register
(3)
(32)
(2)
Data register
From the LSB page to MSB page
DATA IN: Data (1)
(64)
Ex.) Random page program (Prohibition)
Data (64)
DATA IN: Data (1)
16
Data (64)
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 2112byte
data registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or
audio applications which use slow cycle time on the order of µ-seconds, de-activating CE during the data-loading and serial access
would provide significant savings in power consumption.
Figure 4. Program Operation with CE don’t-care.
CLE
CE don’t-care
≈
≈
CE
Data Input
Data Input
WE
ALE
I/Ox
80h
Address(5Cycles)
tCH
tCS
10h
tCEA
CE
CE
tREA
tWP
RE
WE
I/O0~7
out
Figure 5. Read Operation with CE don’t-care.
CLE
CE don’t-care
≈
CE
RE
ALE
tR
R/B
WE
I/Ox
00h
Address(5Cycle)
Data Output(serial access)
30h
17
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
NOTE
Device
K9K2G08X0A
I/O
DATA
ADDRESS
I/Ox
Data In/Out
Col. Add1
Col. Add2
Row Add1
Row Add2
Row Add3
I/O 0 ~ I/O 7
~2112byte
A0~A7
A8~A11
A12~A19
A20~A27
A28
Command Latch Cycle
CLE
tCLS
tCLH
tCS
tCH
CE
tWP
WE
tALH
tALS
ALE
tDH
tDS
I/Ox
Command
Address Latch Cycle
tCLS
CLE
tCS
tWC
CE
tWP
tWP
WE
tWH
tALH
tALS
tWC
tWP
tWH
tALH
tALS
tWC
tWP
tWH
tALH
tALS
tALS
tALH
ALE
tDS
I/Ox
tDH
Col. Add1
tDS
tDH
Col. Add2
18
tDS
tDH
Row Add1
tDS
tDH
Row Add2
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Input Data Latch Cycle
tCLH
≈
CLE
tCH
≈
CE
tALS
≈
tWC
tWP
WE
tWH
tDH
tWP
tDS
tDH
tDS
tDH
≈
tDS
tWP
≈
ALE
I/Ox
DIN final*
DIN 1
≈
DIN 0
NOTES : DIN final means 2112
Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
≈
tCEA
tREH
tREA
tREA
≈
CE
tREA
tCHZ*
tOH
RE
I/Ox
Dout
tRC
≈
tRR
Dout
≈
tRHZ*
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
19
tRHZ*
tOH
Dout
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Status Read Cycle
tCLR
CLE
tCLS
tCLH
tCS
CE
tWP
tCH
WE
tCEA
tCHZ*
tWHR
tOH
RE
tDS
I/Ox
tDH
tIR*
tREA
tRHZ*
tOH
Status Output
70h
20
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Read Operation
tCLR
CLE
CE
tWC
WE
tWB
tAR
ALE
tR
tRHZ
tRC
≈
RE
I/Ox
00h
Col. Add1
Col. Add2
Row Add1
Column Address
Row Add2 Row Add3
30h
Dout N
Dout N+1
Row Address
≈ ≈
tRR
Busy
R/B
Read Operation(Intercepted by CE)
CLE
CE
WE
tWB
tCHZ
tOH
tAR
ALE
tRC
tR
RE
tRR
I/Ox
00h
Col. Add1
Col. Add2
Column Address
Row Add1
Row Add2 Row Add3
Dout N
30h
Row Address
Busy
R/B
21
Dout N+1
Dout N+2
Dout M
22
R/B
I/Ox
RE
ALE
WE
CE
CLE
00h
Col. Add2
Column Address
Col. Add1
Random Data Output In a Page
Row Add2 Row Add3
Row Address
Row Add1
30h
Busy
tRR
tR
tWB
tAR
Dout N
tRC
Dout N+1
05h
Col Add1
Col Add2
Column Address
E0h
tWHR
tCLR
Dout M
tREA
Dout M+1
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Page Program Operation
CLE
CE
tWC
≈
tWC
tWC
WE
tWB
tADL
tPROG
ALE
I/Ox
80h
Co.l Add1 Col. Add2
SerialData
Column Address
Input Command
Row Add1
Row Add2 Row Add3
Row Address
≈ ≈
RE
Din
Din
N
M
1 up to m Byte
Serial Input
70h
m = 2112byte
I/O0
Read Status
Command
≈
R/B
10h
Program
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
23
24
R/B
I/Ox
RE
ALE
WE
Col. Add1
Col. Add2
tWC
Row Add2 Row Add3
Row Address
Row Add1
tADL
Din
M
Serial Input
Din
N
Col. Add1
Col. Add2
tADL
Random Data Column Address
Input Command
85h
tWC
Din
K
Serial Input
Din
J
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Serial Data
Column Address
Input Command
80h
tWC
≈
≈ ≈
CE
≈
≈ ≈
CLE
10h
Program
Command
tWB
tPROG
≈
Page Program Operation with Random Data Input
70h
Read Status
Command
I/O0
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
R/B
I/Ox
RE
ALE
WE
CE
25
Column Address
Row Address
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
35h
tR
tWB
Column Address
Row Address
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
Copy-Back Data
Input Command
Busy
85h
Data 1
tADL
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
00h
tWC
≈
CLE
Data N
10h
tWB
I/O0
I/O0=0 Successful Program
I/O0=1 Error in Program
Busy
70h
Read Status
Command
tPROG
≈
Copy-Back Program Operation With Random Data Input
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
≈ ≈
26
R/B
I/Ox
RE
ALE
WE
tADL
≈ ≈
Din
M
Serial Input
Din
N
≈
15h
Program
Command
(Dummy)
tWB
tCBSY
tCBSY : max. 700us
80h
I/Ox
R/B
tCBSY
Address &
15h
Data Input
Col Add1,2 & Row Add1,2
Data
80h
Ex.) Cache Program
80h
Address &
Data Input
Last Page Input & Program
15h
tCBSY
80h
Address &
Data Input
tCBSY
Din
N
15h
tADL
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
NOTES : tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
Max. 63 times repeatable
Row Address
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
Serial Data Column Address
Input Command
80h
tWC
≈
CE
≈
≈ ≈
CLE
80h
tCPROG
Address &
Data Input
Din
10h
M
Program Confirm
Command
(True)
tWB
≈
Cache Program Operation(available only within a block)
I/O
10h
tPROG
70h
70h
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Block Erase Operation
CLE
CE
tWC
WE
tBERS
tWB
ALE
RE
I/Ox
60h
Row Add1
Row Add2 Row Add3
D0h
70h
I/O 0
Busy
R/B
Auto Block Erase
Setup Command
Erase Command
≈
Row Address
Read Status
Command
27
I/O0=0 Successful Erase
I/O0=1 Error in Erase
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Read ID Operation
CLE
CE
WE
tAR
ALE
RE
tREA
I/Ox
00h
90h
Read ID Command
ECh
Address. 1cycle
XXh
Maker Code Device Code
Device
Device Code*(2nd Cycle)
4th Cycle*
K9K2G08R0A
AAh
15h
K9K2G08U0A
DAh
15h
ID Defintition Table
90 ID : Access command = 90H
Description
1st Byte
2nd Byte
3rd Byte
4th Byte
Device
Code*
Maker Code
Device Code
Don’t care
Page Size, Block Size, Spare Size, Organization
28
4th cyc.*
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
4th ID Data
Description
Page Size
(w/o redundant area )
1KB
2KB
Reserved
Reserved
Blcok Size
(w/o redundant area )
64KB
128KB
256KB
Reserved
Redundant Area Size
( byte/512byte)
8
16
Organization
x8
x16
Serial AccessMinimum
50ns
Reserved
Reserved
Reserved
I/O7
I/O6
I/O5 I/O4
I/O3
I/O2
I/O1 I/O0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
29
0
0
1
1
0
1
0
1
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Device Operation
PAGE READ
Page read is initiated by writing 00h-30h to the command register along with five address cycles. After initial power up, 00h command
is latched. Therefore only five address cycles and 30h command initiates that operation after initial power up. The 2,112 bytes of data
within the selected page are transferred to the data registers in less than 25µs(tR). The system controller can detect the completion of
this data transfer(tR) by analyzing the output of R/B pin. Once the data in a page is loaded into the data registers, they may be read
out in 50ns cycle time by sequentially pulsing RE. The repetitive high to low transitions of the RE clock make the device output the
data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command.
The column address of next data, which is going to be out, may be changed to the address which follows random data output command. Random data output can be operated multiple times regardless of how many times it is done in a page.
Figure 6. Read Operation
CLE
CE
WE
ALE
tR
R/B
RE
I/Ox
00h
Address(5Cycle)
Data Output(Serial Access)
30h
Col Add1,2 & Row Add1,2,3
Data Field
Spare Field
30
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Figure 7. Random Data Output In a Page
tR
R/B
RE
I/Ox
Address
5Cycles
00h
Data Output
30h
05h
Address
2Cycles
E0h
Data Output
Col Add1,2 & Row Add1,2,3
Data Field
Data Field
Spare Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a word or consecutive
bytes up to 2112, in a single page program cycle. The number of consecutive partial page programming operation within the same
page without an intervening erase operation must not exceed 4 times for main array(1time/512byte) and 4 times for spare array(
1time/16byte). The addressing should be done in sequential order in a block. A page program cycle consists of a serial data loading
period in which up to 2112bytes of data may be loaded into the data register, followed by a non-volatile programming period where the
loaded data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and
then serial data loading. The words other than those to be programmed do not need to be loaded. The device supports random data
input in a page. The column address for the next data, which will be entered, may be changed to the address which follows random
data input command(85h). Random data input may be operated multiple times regardless of how many times it is done in a page.
The Page Program confirm command(10h) initiates the programming process. Writing 10h alone without previously entering the serial
data will not initiate the programming process. The internal write state controller automatically executes the algorithms and timings
necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read
Status Register command may be entered to read the status register. The system controller can detect the completion of a program
cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be
checked(Figure 8). The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command
register remains in Read Status command mode until another valid command is written to the command register.
Figure 8. Program & Read Status Operation
tPROG
R/B
"0"
I/Ox
80h
Address & Data Input
10h
70h
Pass
I/O0
Col Add1,2 & Row Add1,2,3
"1"
Data
Fail
31
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Figure 9. Random Data Input In a Page
tPROG
R/B
"0"
I/Ox
Address & Data Input
80h
Address & Data Input
85h
10h
70h
Col Add1,2
Data
Col Add1,2 & Row Add1,2,3
Data
Pass
I/O0
"1"
Fail
Cache Program
Cache Program is an extension of Page Program, which is executed with 2112byte data registers, and is available only within a block.
Since the device has 1 page of cache memory, serial data input may be executed while data stored in data register are programmed
into memory cell.
After writing the first set of data up to 2112byte into the selected cache registers, Cache Program command (15h) instead of actual
Page Program (10h) is inputted to make cache registers free and to start internal program operation. To transfer data from cache registers to data registers, the device remains in Busy state for a short period of time(tCBSY) and has its cache registers ready for the
next data-input while the internal programming gets started with the data loaded into data registers. Read Status command (70h) may
be issued to find out when cache registers become ready by polling the Cache-Busy status bit(I/O 6). Pass/fail status of only the previouse page is available upon the return to Ready state. When the next set of data is inputted with the Cache Program command,
tCBSY is affected by the progress of pending internal programming. The programming of the cache registers is initiated only when the
pending program cycle is finished and the data registers are available for the transfer of data from cache registers. The status bit(I/
O5) for internal Ready/Busy may be polled to identify the completion of internal programming. If the system monitors the progress of
programming only with R/B, the last page of the target programming sequence must be progammed with actual Page Program command (10h). If the Cache Program command (15h) is used instead, status bit (I/O5) must be polled to find out when the last programming is actually finished before starting other operations such as read. Pass/fail status is available in two steps. I/O 1 returns with the
status of the previous page upon Ready or I/O6 status bit changing to "1", and later I/O 0 with the status of current page upon true
Ready (returning from internal programming) or I/O 5 status bit changing to "1". I/O 1 may be read together when I/O 0 is checked.
Figure 10. Cache Program(available only within a block)
tCBSY
R/B
Address &
Data Input*
80h
80h
15h
Col Add1,2 & Row Add1,2,3
Data
Address &
Data Input
80h
15h
80h
Address &
Data Input
15h
70h
Address &
Data Input
Address &
10h
Data Input
Col Add1,2 & Row Add1,2,3
Data
80h
15h
Col Add1,2 & Row Add1,2,3
Data
Col Add1,2 & Row Add1,2,3
Data
tPROG
tCBSY
tCBSY
R/B
I/Ox
tCBSY
tCBSY
Status
output
Address &
15h
Data Input
Col Add1,2 & Row Add1,2,3
Data
80h
Col Add1,2 & Row Add1,2,3
Data
tCBSY
70h
Status
output
80h
Address &
Data Input
15h
Col Add1,2 & Row Add1,2,3
Data
tCBSY
70h
Status
output
Address &
15h
Data Input
Col Add1,2 & Row Add1,2,3
Data
80h
Status
output
70h
Check I/O1 for pass/fail
32
Status
output
Check I/O5 for internal ready/busy
Check I/O0,1 for pass/fail
70h
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
NOTE : Since programming the last page does not employ caching, the program time has to be that of Page Program. However, if the
previous program cycle with the cache data has not finished, the actual program cycle of the last page is initiated only after completion of the previous cycle, which can be expressed as the following formula.
tPROG= Program time for the last page+ Program time for the ( last -1 )th page
- (Program command cycle time + Last page data loading time)
Copy-Back Program
The copy-back program is configured to quickly and efficiently rewrite data stored in one page without utilizing an external memory.
Since the time-consuming cycles of serial access and re-loading cycles are removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be copied to the newly assigned
free block. The operation for performing a copy-back program is a sequential execution of page-read without serial access and copying-program with the address of destination page. A read operation with "35h" command and the address of the source page moves
the whole 2112byte data into the internal data buffer. As soon as the device returns to Ready state, Page-Copy Data-input command
(85h) with the address cycles of destination page followed may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Copy-Back Program operation is allowed only within the same memory plane. Once the CopyBack Program is finished, any additional partial page programming into the copied pages is prohibited before erase. A27 must be the
same between source and target page. Data input cycle for modifying a portion or multiple distant portions of the source page is
allowed as shown in Figure 11. "When there is a program-failure at Copy-Back operation, error is reported by pass/fail status.
But if the soure page has an error bit by charge loss, accumulated copy-back operations could also accumulate bit errors. In
this case, verifying the source page for a bit error is recommended before Copy-back program"
Figure 11. Page Copy-Back program Operation
tR
R/B
I/Ox
00h
Add.(5Cycles)
35h
tPROG
85h
Col. Add1,2 & Row Add1,2,3
Source Address
Add.(5Cycles)
10h
Pass
I/O0
70h
Col. Add1,2 & Row Add1,2,3
Destination Address
Fail
NOTE: It’s prohibited to operate Copy-Back program from an odd address page(source page) to an even address page(target page) or from an even
address page(source page) to an odd address page(target page). Therefore, the Copy-Back program is permitted just between odd address pages or
even address pages.
Figure 12. Page Copy-Back program Operation with Random Data Input
R/B
I/Ox
tPROG
tR
00h
Add.(5Cycles)
35h
Col. Add1,2 & Row Add1,2,3
Source Address
85h
Add.(5Cycles)
Data
Col. Add1,2 & Row Add1,2,3
Destination Address
33
85h
Add.(2Cycles)
Data
10h
Col Add1,2
There is no limitation for the number of repetition.
70h
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup
command(60h). Only address A18 to A28 is valid while A12 to A17 is ignored. The Erase Confirm command(D0h) following the block
address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that
memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 13 details the sequence.
Figure 13. Block Erase Operation
tBERS
R/B
"0"
I/Ox
60h
Address Input(3Cycle)
Pass
I/O0
70h
D0h
"1"
Row Add. : A12 ~ A28
Fail
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, the read command(00h) should be given before starting read cycles.
Table2. Read Staus Register Definition
I/O No.
Page Program
Block Erase
Cache Prorgam
Read
I/O 0
Pass/Fail
Pass/Fail
Pass/Fail(N)
Not use
Pass : "0"
Definition
Fail : "1"
I/O 1
Not use
Not use
Pass/Fail(N-1)
Not use
Pass : "0"
Fail : "1"
I/O 2
Not use
Not use
Not use
Not use
Don’t -cared
I/O 3
Not Use
Not Use
Not Use
Not Use
Don’t -cared
I/O 4
Not Use
Not Use
Not Use
Not Use
Don’t -cared
I/O 5
Ready/Busy
Ready/Busy
True Ready/Busy
Ready/Busy
Busy : "0"
Ready : "1"
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
Ready/Busy
Busy : "0"
Ready : "1"
I/O 7
Write Protect
Write Protect
Write Protect
Write Protect
Protected : "0"
Not Protected
NOTE : 1. True Ready/Busy represents internal program operation status which is being executed in cache program mode.
2. I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
34
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Five read cycles sequentially output the manufacturer code(ECh), and the device code and XXh, 4th cycle ID, 15h respectively.
The command register remains in Read ID mode until further commands are issued to it. Figure 11 shows the operation sequence.
Figure 14. Read ID Operation
tCLR
CLE
tCEA
CE
WE
tAR1
ALE
RE
tWHR
I/OX
90h
00h
tREA
ECh
Maker code
Address. 1cycle
Device
Device
Code*
XXh
4th Cyc.*
Device code
Device Code*(2nd Cycle)
4th Cycle*
K9K2G08R0A
AAh
15h
K9K2G08U0A
DAh
15h
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 3 for device status after reset operation. If the device is
already in reset state a new reset command will be accepted by the command register. The R/B pin transitions to low for tRST after
the Reset command is written. Refer to Figure 12 below.
Figure 15. RESET Operation
tRST
R/B
I/OX
FFh
Table3. Device Status
Operation Mode
After Power-up
After Reset
00h command is latched
Waiting for next command
35
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read. The R/B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is an opendrain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and current
drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 13). Its value can be determined by the following guidance.
Rp
VCC
ibusy
VOL : 0.1V, VOH : VCC-0.1V
Ready Vcc
VOL : 0.4V, VOH : 2.4V
R/B
open drain output
VOH
CL
VOL
Busy
tf
tr
GND
Device
Figure 16. Rp vs tr ,tf & Rp vs ibusy
@ Vcc = 3.3V, Ta = 25°C , CL = 50pF
@ Vcc = 1.8V, Ta = 25°C , CL = 30pF
Ibusy [A]
200n
3m
Ibusy
tr,tf [s]
300n
1.70
2m
0.85
100n
30
tr 60
1.70 tf
1.70
1K
2K
Ibusy
300n
1.2
150
3m
100
0.8
2m
1.8 tf
1.8
1.8
1.8
1K
2K
3K
Rp(ohm)
4K
200n
120
90
0.57
1.70
tr,tf [s]
3K
Rp(ohm)
0.43
tr
50
1m 100n
0.6
1.70
4K
Rp value guidance
Rp(min, 1.8V part) =
Rp(min, 3.3V part) =
1.85V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
=
3.2V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
3mA + ΣIL
=
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
36
1m
Ibusy [A]
200
2.4
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device) and 2V(3.3V device). WP pin provides hardware protection and
is recommended to be kept at VIL during power-up and power-down. A recovery time of minimum 10µs is required before internal circuit gets ready for any command sequences as shown in Figure 14. The two step command sequence for program/erase provides
additional software protection.
Figure 17. AC Waveforms for Power Transition
≈
1.8V device: ~ 1.5V
3.3V device: ~ 2.5V
High
≈
VCC
WE
10µs
≈
≈
WP
37
1.8V device: ~ 1.5V
3.3V device: ~ 2.5V
K9K2G08U0A
K9K2G08R0A
FLASH MEMORY
Extended Data Out Mode
For the EDO mode, the device should hold the data on the system memory bus until the beginning of the next cycle, so that controller
could fetch the data at the falling edge. However NAND flash dosen’t support the EDO mode exactly.
The device stops the data input into the I/O bus after RE rising edge. But since the previous data remains in the I/O bus, the flow of I/
O data seems like Figure 18 and the system can access serially the data with EDO mode. tRLOH which is the parameter for fetching
data at RE falling time is necessary. Its appropriate value can be obtained with the reference chart as shown in Figure 19. The tRHOH
value depands on output load(CL) and I/O bus Pull-up resistor (Rp).
Figure 18. Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L)
≈
CE
tRC
tREH
≈
tRP
RE
tREA
tREA
tRLOH
tRHOH
≈
tCEA
I/Ox
tRR
Dout
≈
Dout
≈
tRHOH
R/B
NOTES : Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
Figure 19. Rp vs tRHOH vs CL
Rp
VCC
@ Vcc = 3.3V, Ta = 25°C
tRHOH
600
600n
I/O Drive
500n
CL
180
200n
100n
30
30p
tRLOH / tRHOH value guidance
tRHOH = CL * VOL * Rp / Vcc
tRLOH(min, 3.3V part) = tRHOH - tREH
Rp = 10k
Rp = 5k
36
18
38
120
85
60
50n
Device
Rp = 50k
300
300n
GND
600
425
360
400n
Rp = 100k
50p
42
60
70p
100p
CL (F)